JP2021158179A5 - - Google Patents

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Publication number
JP2021158179A5
JP2021158179A5 JP2020055744A JP2020055744A JP2021158179A5 JP 2021158179 A5 JP2021158179 A5 JP 2021158179A5 JP 2020055744 A JP2020055744 A JP 2020055744A JP 2020055744 A JP2020055744 A JP 2020055744A JP 2021158179 A5 JP2021158179 A5 JP 2021158179A5
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JP
Japan
Prior art keywords
light emitting
semiconductor layer
emitting element
film
type semiconductor
Prior art date
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Application number
JP2020055744A
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English (en)
Japanese (ja)
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JP2021158179A (ja
JP7283428B2 (ja
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Priority to JP2020055744A priority Critical patent/JP7283428B2/ja
Priority claimed from JP2020055744A external-priority patent/JP7283428B2/ja
Priority to US17/172,169 priority patent/US11764329B2/en
Publication of JP2021158179A publication Critical patent/JP2021158179A/ja
Publication of JP2021158179A5 publication Critical patent/JP2021158179A5/ja
Application granted granted Critical
Publication of JP7283428B2 publication Critical patent/JP7283428B2/ja
Active legal-status Critical Current
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JP2020055744A 2020-03-26 2020-03-26 発光装置 Active JP7283428B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020055744A JP7283428B2 (ja) 2020-03-26 2020-03-26 発光装置
US17/172,169 US11764329B2 (en) 2020-03-26 2021-02-10 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020055744A JP7283428B2 (ja) 2020-03-26 2020-03-26 発光装置

Publications (3)

Publication Number Publication Date
JP2021158179A JP2021158179A (ja) 2021-10-07
JP2021158179A5 true JP2021158179A5 (enExample) 2022-06-27
JP7283428B2 JP7283428B2 (ja) 2023-05-30

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Family Applications (1)

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JP2020055744A Active JP7283428B2 (ja) 2020-03-26 2020-03-26 発光装置

Country Status (2)

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US (1) US11764329B2 (enExample)
JP (1) JP7283428B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7052742B2 (ja) * 2019-01-23 2022-04-12 豊田合成株式会社 発光素子
KR20220149865A (ko) * 2021-04-30 2022-11-09 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
JP2023178174A (ja) * 2022-06-02 2023-12-14 豊田合成株式会社 発光素子および発光素子の製造方法
JP7677239B2 (ja) * 2022-06-02 2025-05-15 豊田合成株式会社 発光素子および発光素子の製造方法
JP7639774B2 (ja) * 2022-06-02 2025-03-05 豊田合成株式会社 発光素子および発光素子の製造方法
JP7740173B2 (ja) * 2022-09-01 2025-09-17 豊田合成株式会社 Ｌｅｄディスプレイ素子およびその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5772235A (en) * 1980-10-20 1982-05-06 Matsushita Electric Ind Co Ltd Transparent electrode and production thereof
JP3713725B2 (ja) * 1994-09-28 2005-11-09 富士ゼロックス株式会社 半導体レーザ装置、その製造方法およびその駆動方法
US6358631B1 (en) * 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
JPH09205250A (ja) * 1996-01-26 1997-08-05 Fuji Xerox Co Ltd 横方向電流注入型面発光半導体レーザ装置およびその製造方法
JP3719467B2 (ja) * 1997-05-16 2005-11-24 日本オプネクスト株式会社 光半導体装置
CN101268554A (zh) 2005-09-19 2008-09-17 皇家飞利浦电子股份有限公司 可变色发光器件及其控制方法
JP5497301B2 (ja) * 2009-01-29 2014-05-21 スタンレー電気株式会社 半導体発光素子及びその製造方法
KR20110132160A (ko) * 2010-06-01 2011-12-07 삼성엘이디 주식회사 반도체 발광 소자 및 그 제조방법
US20130270514A1 (en) * 2012-04-16 2013-10-17 Adam William Saxler Low resistance bidirectional junctions in wide bandgap semiconductor materials
JP2014175338A (ja) * 2013-03-06 2014-09-22 Stanley Electric Co Ltd 半導体発光素子及びその製造方法
US12300770B2 (en) * 2021-03-03 2025-05-13 Toyoda Gosei Co., Ltd. Flip-chip mounted monolithic micro LED display element including a plurality of light-emitting parts arranged in a matrix

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