US9312321B2 - Double-sided organic light-emitting diode, and manufacturing method and display device thereof - Google Patents
Double-sided organic light-emitting diode, and manufacturing method and display device thereof Download PDFInfo
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- US9312321B2 US9312321B2 US14/342,218 US201214342218A US9312321B2 US 9312321 B2 US9312321 B2 US 9312321B2 US 201214342218 A US201214342218 A US 201214342218A US 9312321 B2 US9312321 B2 US 9312321B2
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 97
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims description 16
- 239000007772 electrode material Substances 0.000 description 13
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum compound Chemical class 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
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- H01L27/3267—
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- H01L51/56—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H01L27/3248—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Definitions
- the embodiments of the present invention relate to a novel organic light-emitting diode, and more particularly, to a double-sided organic light-emitting diode and a method of manufacturing the same and a display device having the double-sided organic light-emitting diode.
- each display pixel is driven by a dedicated thin film transistor, the corresponding organic light-emitting diode (OLED) is made to emit light by controlling the dedicated thin film transistor (TFT) to be turned on.
- TFT dedicated thin film transistor
- the organic light-emitting diode can be formed as top emitting or bottom emitting OLED.
- a top emitting OLED and a bottom emitting OLED can be arranged side by side corresponding to one pixel.
- area corresponding to one pixel for example, display area occupied on the display screen
- the top emitting sub-OLED and bottom emitting sub-OLED are integrated on a double-sided organic light-emitting diode OLED of a shared electrode by using a shared electrode
- the TFT and one electrode (generally an anode electrode) of the OLED pixel are integrated together to use the TFT to drive these two OLEDs at the same time, thus, independent control of these two OLEDs can't be implemented.
- FIG. IA it schematically illustrates a schematic structure of such double-sided organic light-emitting diode OLED of the shared electrode.
- the present invention is made in view of above problem, and one purpose of the present invention is to provide a double-sided organic light-emitting diode.
- the two OLEDs included in the double-sided light-emitting diode can be controlled independently by connecting the shared electrode therein to an output end of the thin film transistor.
- a double-sided organic light-emitting diode including: a first electrode; a first organic semiconductor layer arranged on the first electrode; a shared electrode arranged on the first organic semiconductor layer and electrically connected to an output end of a thin film transistor; a second organic semiconductor layer arranged on the shared electrode; and a second electrode arranged on the second organic semiconductor layer, wherein, the first electrode, the shared electrode and the second electrode are electrically isolated from each other.
- the first electrode, the first organic semiconductor layer and the shared electrode operate as a first organic light-emitting diode; and the second electrode, the second organic semiconductor layer and the shared electrode operates as a second organic light-emitting diode.
- the area of the transparent insulating layer is less than the area of the transparent conducting layer; the area of the first electrode is less than the area of the transparent insulating layer; the area of the first organic semiconductor layer is larger than the area of the first electrode and less than or equal to the area of the transparent insulating layer; and the area of the shared electrode is larger than the area of the transparent insulating layer and is less than or equal to the area of the transparent conducting layer.
- a method for manufacturing the double-sided organic light-emitting diode including: providing a first electrode; arranging a first organic semiconductor layer on the first electrode; arranging a shared electrode on the first organic semiconductor layer and making the shared electrode electrically connected to an output end of the thin film transistor and electrically isolated from the first electrode; arranging a second organic semiconductor layer on the shared electrode; and arranging a second electrode on the second organic semiconductor layer and making the second electrode electrically isolated from the first electrode and the shared electrode.
- the method further includes: providing a transparent conducting layer and making the transparent conducting layer electrically connected to the output end of the thin film transistor; and arranging a transparent insulating layer on the transparent conducting layer; arranging the first electrode on the transparent insulating layer so as to make the first electrode electrically isolated from the transparent conducting layer; and arranging the shared electrode to be electrically connected to the transparent conducting layer.
- the transparent conducting layer completely covers the output end of the thin film transistor, and the area of the transparent conducting layer is greater than or equal to the area of the output end of the thin film transistor.
- the transparent insulating layer is arranged on a part of the transparent conducting layer, and the area of the transparent insulating layer is less than the area of the transparent conducting layer;
- the first electrode is arranged on a part of the transparent insulating layer, and the area of the first electrode is less than the area of the transparent insulating layer;
- the first organic semiconductor layer is arranged on the first electrode to cover the first electrode, and the area of the first organic semiconductor layer is larger than the area of the first electrode and is less than or equal to the area of the transparent insulating layer;
- the shared electrode is arranged on the first organic semiconductor layer to cover the first organic semiconductor layer, and the area of the shared electrode is larger than the area of the transparent insulating layer and is less than or equal to the area of the transparent conducting layer.
- the shared electrode is an opaque reflection layer, and the first electrode and the second electrode are transparent layers.
- each pixel includes a double-sided organic light-emitting diode and a thin film transistor
- the double-sided organic light-emitting diode includes: a first electrode; a first organic semiconductor layer arranged on the first electrode; a shared electrode arranged on the first organic semiconductor layer and electrically connected to an output end of the thin film transistor; a second organic semiconductor layer arranged on the shared electrode; and a second electrode arranged on the second organic semiconductor layer, and, the first electrode, the shared electrode and the second electrode are electrically isolated from each other.
- the double-sided organic light-emitting diode further includes: a transparent conducting layer electrically connected to the output end of the thin film transistor; and a transparent insulating layer arranged on the transparent conducting layer; the first electrode is arranged on the transparent insulating layer so as to be electrically isolated from the transparent conducting layer; and the shared electrode is electrically connected to the transparent conducting layer.
- the area of the transparent insulating layer is less than the area of the transparent conducting layer; the area of the first electrode is less than the area of the transparent insulating layer; the area of the first organic semiconductor layer is larger than the area of the first electrode and less than or equal to the area of the transparent insulating layer; and the area of the shared electrode is larger than the area of the transparent insulating layer and is less than or equal to the area of the transparent conducting layer.
- two OLEDs can be integrated together, and the light-emitting of these two OLEDs can be controlled independently, and the resolution of the display device applying the double-sided organic light-emitting diode as the pixel is ensured at the same time.
- FIG. 1A is a schematic diagram illustrating connection between the drain electrode of the thin film transistor TFT and the anode electrode of the double-sided organic light-emitting diode OLED;
- FIG. 1B is a schematic diagram illustrating connecting the drain electrode of the TFT to the shared electrode of the double-sided organic light-emitting diode OLED according to the concept of the present invention
- FIG. 2A is a schematic structural diagram of the double-sided organic light-emitting diode according to the embodiment of the present invention.
- FIG. 2B is a schematic operational diagram of the double-sided organic light-emitting diode shown in FIG. 2A ;
- FIG. 3 is a flow chart illustrating the method for manufacturing the double-sided organic light-emitting diode according to the embodiments of the present invention.
- FIG. 4 is a schematic process flow of manufacturing the double-sided organic light-emitting diode according to the embodiments of the present invention.
- the anode electrode of the double-sided organic light-emitting diode OLED is generally connected to the drain electrode (D) of the TFT (generally, using the indium-tin oxide (ITO) layer as the anode electrode layer), and in this case, independent control of two sub-OLEDs in the double-sided organic light-emitting diode OLED (for example, top emitting sub-OLED and bottom emitting sub-OLED) can't be implemented.
- the connection of the gate electrode (G) and the source electrode (S) of the TFT are not shown in FIG. 1A , and those skilled in the art can determine the connecting type thereof easily based on commonly known knowledge in the arts.
- FIG. 1B schematically illustrates a schematic diagram illustrating connecting the drain electrode of the TFT to the shared electrode of the double-sided organic light-emitting diode OLED according to the concept of the present invention.
- the double-sided organic light-emitting diode OLED according to the concept of the present invention implements independent control of the two sub-OLEDs of the double-sided organic light-emitting diode by leading out the shared electrodes of the two sub-OLEDs among others (for example, top emitting sub-OLED and bottom emitting sub-OLED) and electrically connecting the shared electrode to the output end of the thin film transistor.
- FIG. 2 and FIG. 4 the representations of the TFT are simplified, and the gate electrode (G), the source electrode (S) and the drain electrode (D) of the TFT are not shown specifically.
- the connecting types shown in FIG. 2 and FIG. 4 are made for the drain electrode (D) of the TFT, in other words, the gate electrode and the source electrode of the TFT are not connected to the connection structures in FIG. 2 and FIG. 4 .
- FIG. 2 and FIG. 4 only schematically illustrate arrangement relationship of the positions of respective layers.
- the double-sided organic light-emitting diode OLED includes: a first electrode 1 ; a first organic semiconductor layer 2 ; a shared electrode 3 ; a second organic semiconductor layer 4 ; and a second electrode 5 .
- the first organic semiconductor layer 2 is arranged on the first electrode 1 .
- the shared electrode 3 is arranged on the first organic semiconductor layer 2 and is electrically connected to the output end (for example, the drain electrode D) of the thin film transistor TFT.
- the second organic semiconductor layer 4 is arranged on the shared electrode 3 .
- the second electrode 5 is arranged on the second organic semiconductor layer 4 .
- the first electrode 1 , the first organic semiconductor layer 2 and the shared electrode 3 operate as a first organic light-emitting diode OLED; and the second electrode 5 , the second organic semiconductor layer 4 and the shared electrode 3 operates as a second organic light-emitting diode OLED.
- the double-sided organic light-emitting diode OLED three electrodes of the first electrode 1 , the shared electrode 3 and the second electrode 5 which are electrically isolated from each other are led out.
- the shared electrode 3 is electrically connected to the output end of the thin film transistor TFT. Further, proper voltage can be applied to the first electrode 1 and the second electrode 5 respectively so as to control the voltage between the first electrode 1 and the shared electrode 3 and the voltage between the second electrode 5 and the shared electrode 3 independently.
- the double-sided organic light-emitting diode OLED further includes a transparent conducting layer 6 electrically connected to the output end of the TFT and a transparent insulating layer 7 arranged on the transparent conducting layer 6 .
- the first electrode 1 is arranged on the transparent insulating layer 7 , and the transparent insulating layer 7 isolates the first electrode 1 from the transparent conducting layer 6 . Further, the shared electrode 3 is electrically connected to the transparent conducting layer 6 , so as to implement electrical connection with the output end of the TFT.
- FIG. 2A in addition to showing layered structure of the double-sided organic light-emitting diode OLED, it also shows a preferable integrated structure of the double-sided organic light-emitting diode OLED and the TFT.
- the transparent conducting layer 6 is arranged on the output end of the TFT, and covers at least a part of the output end of the TFT.
- the transparent conducting layer 6 completely covers the output end of the TFT, and expands the area of the transparent conducting layer 6 in horizontal direction shown in FIG. 2A (i.e., a plane direction on which the display pixel formed by the double-sided organic light-emitting diode OLED is arranged in order).
- the area of the transparent conducting layer is greater than or equal to the area of the output end of the TFT (for example, the area of the drain electrode of the TFT).
- the area of the transparent insulating layer 7 is less than the area of the transparent conducting layer 6
- the area of the first electrode 1 is less than the area of the transparent insulating layer 7 , so as to make the transparent insulating layer 7 able to isolate the transparent conducting layer 6 from the first electrode 1 .
- the area of the first organic semiconductor layer 2 is larger than the area of the first electrode 1 and is less than or equal to the area of the transparent insulating layer 7 , so as to make the transparent insulating layer 7 able to also isolate the transparent conducting layer 6 from the first organic semiconductor layer 2 .
- the area of the shared electrode 3 is larger than the area of the transparent insulating layer 7 and is less than or equal to the area of the transparent conducting layer 6 , so as to make the shared electrode 3 able to connect to the transparent conducting layer 6 .
- the shared electrode 3 of the double-sided organic light-emitting diode OLED can be led out and the shared electrode 3 led out can be connected to the output end of the TFT through the transparent conducting layer 6 .
- voltages on 3 electrodes of the double-sided organic light-emitting diode OLED can be controlled independently, so as to implement independent control of the two sub-OLEDs in the double-sided organic light-emitting diode OLED (the first OLED and the second OLED in FIG. 2B ).
- FIG. 2B it illustrates schematic diagram when the double-sided organic light-emitting diode OLED shown in FIG. 2A operates.
- the shared electrode 3 is formed as an opaque reflection layer, and the first electrode 1 and the second electrode 5 are formed as transparent layers.
- the double-sided organic light-emitting diode OLED is arranged on a substrate layer, and that the substrate layer is also transparent.
- FIG. 2A only the basic structure necessary for the double-sided organic light-emitting diode OLED is illustrated in FIG. 2A , other layers can be deposited between the respective layers illustrated so as to further improve the performance of the double-sided organic light-emitting diode OLED.
- the method 100 for manufacturing starts at step S 101 .
- the first electrode is provided.
- the first electrode is a transparent electrode, and is, for example, an indium-tin oxide (ITO) layer or another transparent electrode material layer.
- ITO indium-tin oxide
- the first electrode can be provided by manner of deposition.
- the first organic semiconductor layer is arranged on the first electrode.
- the first organic semiconductor layer can be provided by manner of deposition.
- the first organic semiconductor layer is used as the first light emitting layer.
- the shared electrode is arranged on the first organic semiconductor layer, and the shared electrode is made electrically connected to the output end of the thin film transistor and electrically isolated from the first electrode.
- the shared electrode is deposited on the first organic semiconductor layer, and the shared electrode is, for example, an opaque aluminum (Al) or aluminum compound layer.
- the second organic semiconductor layer is arranged on the shared electrode.
- the second organic semiconductor layer can be provided by manner of deposition.
- the second organic semiconductor layer is used as a second light emitting layer.
- the second electrode is arranged on the second organic semiconductor layer, and the second electrode is made electrically isolated from the first electrode and the shared electrode.
- the second electrode is a transparent electrode, and is, for example, an indium-tin oxide (ITO) layer or another transparent electrode material layer.
- ITO indium-tin oxide
- the second organic semiconductor layer can be provided by manner of deposition.
- the shared electrode is opaque, and it separates the light emitted from the first organic semiconductor layer and the light emitted from the second organic semiconductor layer. Therefore, the light emitted from the first organic semiconductor layer transmits the first electrode, and the light emitted from the second organic semiconductor layer transmits the second electrode, so as to implement double-sided light emitting.
- the color and brightness of the light emitting can be selected.
- the method for manufacturing the double-sided organic light-emitting diode OLED further includes steps S 102 and S 105 (not shown in FIG. 3 ).
- the transparent conducting layer covers at least a part of the output end of the TFT.
- the transparent conducting layer completely covers the output end of the TFT, and the area of the transparent conducting layer is larger than or equal to the area of the output end of the TFT (for example, the area of the drain electrode of the TFT).
- the transparent insulating layer is arranged on a part of the transparent conducting layer, and the area of the transparent insulating layer is less than the area of the transparent conducting layer; the first electrode is arranged on a part of the transparent insulating layer, and the area of the first electrode is less than the area of the transparent insulating layer, so as to make the transparent insulating layer able to isolate the transparent conducting layer from the first electrode.
- the first organic semiconductor layer is arranged on the first electrode to cover the first electrode, and the area of the first organic semiconductor layer is larger than the area of the first electrode and is less than or equal to the area of the transparent insulating layer, so as to make the transparent insulating layer able to isolate the transparent conducting layer from the first organic semiconductor layer.
- the shared electrode is arranged on the first organic semiconductor layer to cover the first organic semiconductor layer, and the area of the shared electrode is larger than the area of the transparent insulating layer and is less than or equal to the area of the transparent conducting layer, so as to make the shared electrode able to connect to the transparent conducting layer.
- the transparent insulating layer is deposited or rotationally coated on the transparent conducting layer, and the transparent insulating layer only covers a part of the transparent conducting layer.
- the first organic semiconductor layer is deposited on the first electrode, and the first organic semiconductor layer completely covers or envelops the first electrode layer and covers a part of the transparent insulating layer.
- the area of the first organic semiconductor layer is larger than the area of the first electrode and is less than or equal to the area of the transparent insulating layer.
- the first semiconductor layer itself includes multi-layers, for example, a cavity transport layer (HTL), a light emitting layer (EL), an electron transport layer (ETL).
- HTL cavity transport layer
- EL light emitting layer
- ETL electron transport layer
- the shared electrode layer is deposited on the first semiconductor layer, and the shared electrode layer completely covers or envelops the first semiconductor layer and covers a part of the transparent electrode layer.
- the shared electrode layer is an opaque conducting layer, and it is, for example, aluminum or aluminum compound.
- the area of the shared electrode is larger than the area of the transparent insulating layer and is less than or equal to the area of the transparent conducting layer.
- the second semiconductor layer itself includes multi-layers, for example, a cavity transport layer (HTL), a light emitting layer (EL), an electron transport layer (ETL).
- HTL cavity transport layer
- EL light emitting layer
- ETL electron transport layer
- the double-sided organic light-emitting diode is formed specifically, for example:
- the electrode materials of the first electrode and the shared electrode are selected so that the first electrode is used as a transparent cathode and the shared electrode is used as an opaque anode, the first organic semiconductor layer emits light when the potential of the voltage applied on the first electrode is lower than the potential of the voltage applied on the shared electrode;
- the electrode materials of the second electrode and the shared electrode are selected so that the second electrode is used as the transparent cathode and the shared electrode is used as an opaque anode, the second organic semiconductor layer emits light when the potential of the voltage applied on the second electrode is lower than the potential of the voltage applied on the shared electrode.
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Abstract
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Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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CN201110427958 | 2011-12-19 | ||
CN201110427958.5 | 2011-12-19 | ||
CN201110427958.5A CN103165826B (en) | 2011-12-19 | 2011-12-19 | Double sided organic light emitting diode and manufacture method, display device |
PCT/CN2012/086768 WO2013091520A1 (en) | 2011-12-19 | 2012-12-17 | Double-sided organic light-emitting diode, and manufacturing method and display device thereof |
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US20140306204A1 US20140306204A1 (en) | 2014-10-16 |
US9312321B2 true US9312321B2 (en) | 2016-04-12 |
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US14/342,218 Active US9312321B2 (en) | 2011-12-19 | 2012-12-17 | Double-sided organic light-emitting diode, and manufacturing method and display device thereof |
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US (1) | US9312321B2 (en) |
CN (1) | CN103165826B (en) |
WO (1) | WO2013091520A1 (en) |
Families Citing this family (13)
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CN104765157B (en) * | 2015-05-06 | 2017-12-08 | 京东方科技集团股份有限公司 | Display panel and its display methods, display device |
CN105226068B (en) * | 2015-09-14 | 2018-01-26 | 京东方科技集团股份有限公司 | A kind of double-sided display substrate and preparation method thereof and display device |
CN105226069A (en) * | 2015-09-22 | 2016-01-06 | 深圳市华星光电技术有限公司 | A kind of double face display panel and double-side display device |
KR102536252B1 (en) * | 2016-03-25 | 2023-05-25 | 삼성디스플레이 주식회사 | Display apparatus and Method of manufacturing the same |
CN106601777B (en) * | 2016-12-28 | 2019-07-12 | 武汉华星光电技术有限公司 | Double-side display device |
CN206685388U (en) * | 2017-03-14 | 2017-11-28 | 京东方科技集团股份有限公司 | A kind of encapsulating structure, display panel and display device |
CN107331687A (en) * | 2017-07-11 | 2017-11-07 | 武汉华星光电半导体显示技术有限公司 | OLED display with double faces and preparation method thereof |
CN107221291B (en) * | 2017-07-31 | 2019-04-23 | 上海天马微电子有限公司 | Display substrate, display panel, driving method of display panel and display device |
CN108598121B (en) * | 2018-04-27 | 2020-06-05 | 京东方科技集团股份有限公司 | Double-sided display substrate and manufacturing method thereof, driving circuit and driving method thereof |
CN110197839B (en) * | 2018-06-15 | 2021-08-03 | 京东方科技集团股份有限公司 | Double-sided display panel, preparation method thereof and double-sided display device |
CN109860247A (en) * | 2019-01-18 | 2019-06-07 | 深圳市华星光电半导体显示技术有限公司 | A kind of double face display panel and its display device |
CN109904339A (en) * | 2019-01-22 | 2019-06-18 | 深圳市华星光电半导体显示技术有限公司 | A kind of double face display panel and its display device |
CN113330577A (en) * | 2019-05-28 | 2021-08-31 | 深圳市柔宇科技股份有限公司 | OLED double-sided display panel |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6815710B2 (en) * | 2001-03-30 | 2004-11-09 | Pioneer Corporation | Organic electroluminescence unit |
CN1700828A (en) | 2004-05-21 | 2005-11-23 | Lg电子有限公司 | Organic el display and fabricating method thereof |
CN1816228A (en) | 2005-11-29 | 2006-08-09 | 友达光电股份有限公司 | Active light-emitting element and active light-emitting displaying device |
US20070114522A1 (en) * | 2005-10-31 | 2007-05-24 | Hoi-Sing Kwok | Double sided emission organic light emitting diode display |
CN1979915A (en) | 2005-11-29 | 2007-06-13 | 中华映管股份有限公司 | Organic electric luminous element |
US20070132379A1 (en) * | 2005-12-12 | 2007-06-14 | Wintek Corporation | Dual display device |
US20100308353A1 (en) * | 2008-02-22 | 2010-12-09 | Koninklijke Philips Electronics N.V. | Double sided organic light emitting diode (oled) |
CN102044554A (en) | 2009-10-16 | 2011-05-04 | 上海天马微电子有限公司 | Organic light emitting diode display for double-sided display |
-
2011
- 2011-12-19 CN CN201110427958.5A patent/CN103165826B/en active Active
-
2012
- 2012-12-17 US US14/342,218 patent/US9312321B2/en active Active
- 2012-12-17 WO PCT/CN2012/086768 patent/WO2013091520A1/en active Application Filing
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6815710B2 (en) * | 2001-03-30 | 2004-11-09 | Pioneer Corporation | Organic electroluminescence unit |
CN1700828A (en) | 2004-05-21 | 2005-11-23 | Lg电子有限公司 | Organic el display and fabricating method thereof |
US20050258740A1 (en) | 2004-05-21 | 2005-11-24 | Lg Electronics Inc. | Organic EL display and fabricating method thereof |
US7474047B2 (en) | 2004-05-21 | 2009-01-06 | Lg Display Co., Ltd. | Organic EL display and fabricating method thereof |
US20070114522A1 (en) * | 2005-10-31 | 2007-05-24 | Hoi-Sing Kwok | Double sided emission organic light emitting diode display |
CN1816228A (en) | 2005-11-29 | 2006-08-09 | 友达光电股份有限公司 | Active light-emitting element and active light-emitting displaying device |
CN1979915A (en) | 2005-11-29 | 2007-06-13 | 中华映管股份有限公司 | Organic electric luminous element |
US20070132379A1 (en) * | 2005-12-12 | 2007-06-14 | Wintek Corporation | Dual display device |
US7564184B2 (en) | 2005-12-12 | 2009-07-21 | Wintek Corporation | Dual display device |
US20100308353A1 (en) * | 2008-02-22 | 2010-12-09 | Koninklijke Philips Electronics N.V. | Double sided organic light emitting diode (oled) |
CN102044554A (en) | 2009-10-16 | 2011-05-04 | 上海天马微电子有限公司 | Organic light emitting diode display for double-sided display |
Non-Patent Citations (4)
Title |
---|
Chinese First Office Action with English Translation for related Application No. 2011104279585 dated Feb. 28, 2015, 12 pages. |
PCT/CN2012/086768 International Preliminary Report on Patentability dated Jun. 24, 2014 (11 pages including English translation). |
PCT/CN2012/086768 International Search Report dated Mar. 7, 2013 (6 pages including English translation). |
Second Office Action dated Nov. 3, 2015 out of corresponding Chinese priority Application No. 201110427958.5 (6 pages including English translation). |
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WO2013091520A1 (en) | 2013-06-27 |
US20140306204A1 (en) | 2014-10-16 |
CN103165826A (en) | 2013-06-19 |
CN103165826B (en) | 2016-12-28 |
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