JP7267413B2 - 流路部材 - Google Patents
流路部材 Download PDFInfo
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- JP7267413B2 JP7267413B2 JP2021522824A JP2021522824A JP7267413B2 JP 7267413 B2 JP7267413 B2 JP 7267413B2 JP 2021522824 A JP2021522824 A JP 2021522824A JP 2021522824 A JP2021522824 A JP 2021522824A JP 7267413 B2 JP7267413 B2 JP 7267413B2
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- 239000000758 substrate Substances 0.000 claims description 21
- 239000000919 ceramic Substances 0.000 claims description 15
- 238000013459 approach Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 239000000843 powder Substances 0.000 description 6
- 230000000717 retained effect Effects 0.000 description 6
- 239000011224 oxide ceramic Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- -1 sintering aid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
- F28F9/22—Arrangements for directing heat-exchange media into successive compartments, e.g. arrangements of guide plates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
2 :基体
2a:第1面
2b:第1流入口
2c:第1流出口
2d:第2流入口
3 :流路
3a:第1流路
3b:第2流路
3c:壁面
3d:延長部
4 :第1突起
4a:第1傾斜面
5 ;第2突起
5a:第2傾斜面
6 :壁
6a:凹部
7 :頂部
8 :凹状部
9 :平面
10:突部
Claims (13)
- 第1面を有し、さらに第1流入口および第1流出口を有する基体と、
該基体の内部において前記第1流入口および前記第1流出口に繋がる流路とを備え、
該流路は、
前記第1面に沿う第1流路と、
該第1流路と交わる第2流路と
を有し、
前記基体は、前記第1流路に第1突起を有し、前記第1突起の表面が、前記第2流路の壁面と連続しており、
前記基体は、前記第1流路の端面に壁を有し、該壁が凹部を有している、流路部材。 - 前記壁が、前記第2流路の壁面と連続している、請求項1に記載の流路部材。
- 前記壁と前記第2流路との間に、前記第1流路の延長部を有する、請求項1に記載の流路部材。
- 前記基体は、前記延長部に第2突起を有し、前記第2突起の表面が、前記第2流路の壁面と連続している、請求項3に記載の流路部材。
- 前記第1突起は、前記第2流路に近づくにつれて高くなっている第1傾斜面を備える、請求項4に記載の流路部材。
- 前記第2突起は、前記第2流路に近づくにつれて高くなっている第2傾斜面を備える、請求項5に記載の流路部材。
- 前記第1突起または前記第2突起の少なくとも一方は、滑らかにつながっている頂部を有し、前記頂部が前記第2流路の壁面よりも外側に位置している、請求項4に記載の流路部材。
- 前記第1傾斜面または前記第2傾斜面の少なくとも一方に、前記第2流路の幅方向中心の断面で、形状が凹となる凹状部を有し、前記凹状部を全面に亘って備える、請求項6に記載の流路部材。
- 前記頂部に、前記第1面に沿う平面を備える、請求項7に記載の流路部材。
- 前記第2傾斜面の傾きが、前記第1傾斜面の傾きよりも大きい、請求項6に記載の流路部材。
- 請求項1乃至請求項10のいずれかに記載の流路部材が、前記第1流出口を複数有し、前記基体がセラミックスからなる、シャワープレート。
- 請求項1乃至請求項10のいずれかに記載の流路部材における前記基体の前記第1面が熱交換面であり、前記第1突起が前記第1面に向かって突出している、熱交換器。
- 請求項1乃至請求項10のいずれかに記載の流路部材が、さらに前記流路に繋がる第2流入口を備え、前記第1突起を含む領域が反応領域である、化学反応器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019101507 | 2019-05-30 | ||
JP2019101507 | 2019-05-30 | ||
PCT/JP2020/020956 WO2020241703A1 (ja) | 2019-05-30 | 2020-05-27 | 流路部材 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020241703A1 JPWO2020241703A1 (ja) | 2020-12-03 |
JP7267413B2 true JP7267413B2 (ja) | 2023-05-01 |
Family
ID=73553811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021522824A Active JP7267413B2 (ja) | 2019-05-30 | 2020-05-27 | 流路部材 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220298641A1 (ja) |
JP (1) | JP7267413B2 (ja) |
WO (1) | WO2020241703A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023054531A1 (ja) * | 2021-09-29 | 2023-04-06 | 京セラ株式会社 | シャワープレート |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123159A (ja) | 2003-05-27 | 2005-05-12 | Matsushita Electric Works Ltd | プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56162499U (ja) * | 1980-05-07 | 1981-12-03 | ||
JPH0715132Y2 (ja) * | 1989-02-23 | 1995-04-10 | 株式会社島津製作所 | プラズマcvd装置の電極構造 |
JP5062144B2 (ja) * | 2008-11-10 | 2012-10-31 | 東京エレクトロン株式会社 | ガスインジェクター |
-
2020
- 2020-05-27 JP JP2021522824A patent/JP7267413B2/ja active Active
- 2020-05-27 US US17/613,684 patent/US20220298641A1/en active Pending
- 2020-05-27 WO PCT/JP2020/020956 patent/WO2020241703A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005123159A (ja) | 2003-05-27 | 2005-05-12 | Matsushita Electric Works Ltd | プラズマ処理装置、プラズマ生成用の反応器の製造方法、及びプラズマ処理方法 |
Also Published As
Publication number | Publication date |
---|---|
US20220298641A1 (en) | 2022-09-22 |
JPWO2020241703A1 (ja) | 2020-12-03 |
WO2020241703A1 (ja) | 2020-12-03 |
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