JP7261709B2 - フォトマスク、フォトマスクの製造方法及び表示装置の製造方法 - Google Patents

フォトマスク、フォトマスクの製造方法及び表示装置の製造方法 Download PDF

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Publication number
JP7261709B2
JP7261709B2 JP2019167130A JP2019167130A JP7261709B2 JP 7261709 B2 JP7261709 B2 JP 7261709B2 JP 2019167130 A JP2019167130 A JP 2019167130A JP 2019167130 A JP2019167130 A JP 2019167130A JP 7261709 B2 JP7261709 B2 JP 7261709B2
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Japan
Prior art keywords
control film
light
film
photomask
transmission control
Prior art date
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Active
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JP2019167130A
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English (en)
Japanese (ja)
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JP2021043404A5 (https=
JP2021043404A (ja
Inventor
昇 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
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Hoya Corp
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Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2019167130A priority Critical patent/JP7261709B2/ja
Priority to TW109129991A priority patent/TWI858120B/zh
Priority to KR1020200112409A priority patent/KR102918524B1/ko
Priority to CN202010944925.7A priority patent/CN112506002B/zh
Publication of JP2021043404A publication Critical patent/JP2021043404A/ja
Publication of JP2021043404A5 publication Critical patent/JP2021043404A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2019167130A 2019-09-13 2019-09-13 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法 Active JP7261709B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019167130A JP7261709B2 (ja) 2019-09-13 2019-09-13 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法
TW109129991A TWI858120B (zh) 2019-09-13 2020-09-02 光罩、光罩之製造方法及顯示裝置之製造方法
KR1020200112409A KR102918524B1 (ko) 2019-09-13 2020-09-03 포토마스크, 포토마스크의 제조 방법 및 표시 장치의 제조 방법
CN202010944925.7A CN112506002B (zh) 2019-09-13 2020-09-10 光掩模、光掩模的制造方法和显示装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019167130A JP7261709B2 (ja) 2019-09-13 2019-09-13 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法

Publications (3)

Publication Number Publication Date
JP2021043404A JP2021043404A (ja) 2021-03-18
JP2021043404A5 JP2021043404A5 (https=) 2022-06-16
JP7261709B2 true JP7261709B2 (ja) 2023-04-20

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JP2019167130A Active JP7261709B2 (ja) 2019-09-13 2019-09-13 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法

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JP (1) JP7261709B2 (https=)
KR (1) KR102918524B1 (https=)
CN (1) CN112506002B (https=)
TW (1) TWI858120B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7724048B1 (ja) * 2024-07-24 2025-08-15 株式会社エスケーエレクトロニクス フォトマスクの製造方法及びフォトマスク

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090104540A1 (en) 2007-10-17 2009-04-23 Texas Instruments Incorporated Graded lithographic mask
JP2013250478A (ja) 2012-06-01 2013-12-12 Hoya Corp フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP2014081409A (ja) 2012-10-12 2014-05-08 Hoya Corp 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JP2015102608A (ja) 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2018109672A (ja) 2016-12-28 2018-07-12 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5160286B2 (ja) 2008-04-15 2013-03-13 Ｈｏｙａ株式会社 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6391495B2 (ja) * 2015-02-23 2018-09-19 Hoya株式会社 フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法
JP2017182052A (ja) * 2016-03-24 2017-10-05 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク及び表示装置の製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6368000B1 (ja) * 2017-04-04 2018-08-01 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090104540A1 (en) 2007-10-17 2009-04-23 Texas Instruments Incorporated Graded lithographic mask
JP2013250478A (ja) 2012-06-01 2013-12-12 Hoya Corp フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP2014081409A (ja) 2012-10-12 2014-05-08 Hoya Corp 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JP2015102608A (ja) 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2018109672A (ja) 2016-12-28 2018-07-12 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法

Also Published As

Publication number Publication date
TWI858120B (zh) 2024-10-11
KR102918524B1 (ko) 2026-01-28
CN112506002A (zh) 2021-03-16
KR20210031826A (ko) 2021-03-23
CN112506002B (zh) 2025-08-01
JP2021043404A (ja) 2021-03-18
TW202125094A (zh) 2021-07-01

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