CN112506002B - 光掩模、光掩模的制造方法和显示装置的制造方法 - Google Patents

光掩模、光掩模的制造方法和显示装置的制造方法

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Publication number
CN112506002B
CN112506002B CN202010944925.7A CN202010944925A CN112506002B CN 112506002 B CN112506002 B CN 112506002B CN 202010944925 A CN202010944925 A CN 202010944925A CN 112506002 B CN112506002 B CN 112506002B
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CN
China
Prior art keywords
light
control film
film
photomask
transparent substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010944925.7A
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English (en)
Chinese (zh)
Other versions
CN112506002A (zh
Inventor
山口昇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN112506002A publication Critical patent/CN112506002A/zh
Application granted granted Critical
Publication of CN112506002B publication Critical patent/CN112506002B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN202010944925.7A 2019-09-13 2020-09-10 光掩模、光掩模的制造方法和显示装置的制造方法 Active CN112506002B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-167130 2019-09-13
JP2019167130A JP7261709B2 (ja) 2019-09-13 2019-09-13 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
CN112506002A CN112506002A (zh) 2021-03-16
CN112506002B true CN112506002B (zh) 2025-08-01

Family

ID=74864034

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010944925.7A Active CN112506002B (zh) 2019-09-13 2020-09-10 光掩模、光掩模的制造方法和显示装置的制造方法

Country Status (4)

Country Link
JP (1) JP7261709B2 (https=)
KR (1) KR102918524B1 (https=)
CN (1) CN112506002B (https=)
TW (1) TWI858120B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7724048B1 (ja) * 2024-07-24 2025-08-15 株式会社エスケーエレクトロニクス フォトマスクの製造方法及びフォトマスク

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103454851A (zh) * 2012-06-01 2013-12-18 Hoya株式会社 光掩模、光掩模的制造方法以及图案的转印方法
CN110023836A (zh) * 2016-12-28 2019-07-16 株式会社Sk电子 半色调掩模、光掩模坯和半色调掩模的制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7883822B2 (en) 2007-10-17 2011-02-08 Texas Instruments Incorporated Graded lithographic mask
JP5160286B2 (ja) 2008-04-15 2013-03-13 Ｈｏｙａ株式会社 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JP2015102608A (ja) 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP6391495B2 (ja) * 2015-02-23 2018-09-19 Hoya株式会社 フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法
JP2017182052A (ja) * 2016-03-24 2017-10-05 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク及び表示装置の製造方法
JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6368000B1 (ja) * 2017-04-04 2018-08-01 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103454851A (zh) * 2012-06-01 2013-12-18 Hoya株式会社 光掩模、光掩模的制造方法以及图案的转印方法
CN110023836A (zh) * 2016-12-28 2019-07-16 株式会社Sk电子 半色调掩模、光掩模坯和半色调掩模的制造方法

Also Published As

Publication number Publication date
TWI858120B (zh) 2024-10-11
KR102918524B1 (ko) 2026-01-28
CN112506002A (zh) 2021-03-16
KR20210031826A (ko) 2021-03-23
JP2021043404A (ja) 2021-03-18
JP7261709B2 (ja) 2023-04-20
TW202125094A (zh) 2021-07-01

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