TWI858120B - 光罩、光罩之製造方法及顯示裝置之製造方法 - Google Patents

光罩、光罩之製造方法及顯示裝置之製造方法 Download PDF

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Publication number
TWI858120B
TWI858120B TW109129991A TW109129991A TWI858120B TW I858120 B TWI858120 B TW I858120B TW 109129991 A TW109129991 A TW 109129991A TW 109129991 A TW109129991 A TW 109129991A TW I858120 B TWI858120 B TW I858120B
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TW
Taiwan
Prior art keywords
light
control film
film
pattern
transparent substrate
Prior art date
Application number
TW109129991A
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English (en)
Chinese (zh)
Other versions
TW202125094A (zh
Inventor
山口昇
Original Assignee
日商Ｈｏｙａ股份有限公司
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Application filed by 日商Ｈｏｙａ股份有限公司 filed Critical 日商Ｈｏｙａ股份有限公司
Publication of TW202125094A publication Critical patent/TW202125094A/zh
Application granted granted Critical
Publication of TWI858120B publication Critical patent/TWI858120B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW109129991A 2019-09-13 2020-09-02 光罩、光罩之製造方法及顯示裝置之製造方法 TWI858120B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-167130 2019-09-13
JP2019167130A JP7261709B2 (ja) 2019-09-13 2019-09-13 フォトマスク、フォトマスクの製造方法及び表示装置の製造方法

Publications (2)

Publication Number Publication Date
TW202125094A TW202125094A (zh) 2021-07-01
TWI858120B true TWI858120B (zh) 2024-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW109129991A TWI858120B (zh) 2019-09-13 2020-09-02 光罩、光罩之製造方法及顯示裝置之製造方法

Country Status (4)

Country Link
JP (1) JP7261709B2 (https=)
KR (1) KR102918524B1 (https=)
CN (1) CN112506002B (https=)
TW (1) TWI858120B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7724048B1 (ja) * 2024-07-24 2025-08-15 株式会社エスケーエレクトロニクス フォトマスクの製造方法及びフォトマスク

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013250478A (ja) * 2012-06-01 2013-12-12 Hoya Corp フォトマスク、フォトマスクの製造方法及びパターンの転写方法
TW201704842A (zh) * 2015-02-23 2017-02-01 Ｈｏｙａ股份有限公司 光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法
TW201805718A (zh) * 2016-05-18 2018-02-16 Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
JP2018109672A (ja) * 2016-12-28 2018-07-12 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
CN108693697A (zh) * 2017-04-04 2018-10-23 株式会社Sk电子 光掩模和光掩模坯以及光掩模的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7883822B2 (en) 2007-10-17 2011-02-08 Texas Instruments Incorporated Graded lithographic mask
JP5160286B2 (ja) 2008-04-15 2013-03-13 Ｈｏｙａ株式会社 多階調フォトマスク、パターン転写方法、及び薄膜トランジスタの製造方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
JP6157832B2 (ja) 2012-10-12 2017-07-05 Hoya株式会社 電子デバイスの製造方法、表示装置の製造方法、フォトマスクの製造方法、及びフォトマスク
JP2015102608A (ja) 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP6581759B2 (ja) * 2014-07-17 2019-09-25 Hoya株式会社 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法
JP2017182052A (ja) * 2016-03-24 2017-10-05 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク及び表示装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013250478A (ja) * 2012-06-01 2013-12-12 Hoya Corp フォトマスク、フォトマスクの製造方法及びパターンの転写方法
TW201704842A (zh) * 2015-02-23 2017-02-01 Ｈｏｙａ股份有限公司 光罩、光罩組、光罩之製造方法、及顯示裝置之製造方法
TW201805718A (zh) * 2016-05-18 2018-02-16 Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
JP2018109672A (ja) * 2016-12-28 2018-07-12 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
CN108693697A (zh) * 2017-04-04 2018-10-23 株式会社Sk电子 光掩模和光掩模坯以及光掩模的制造方法

Also Published As

Publication number Publication date
KR102918524B1 (ko) 2026-01-28
CN112506002A (zh) 2021-03-16
KR20210031826A (ko) 2021-03-23
CN112506002B (zh) 2025-08-01
JP2021043404A (ja) 2021-03-18
JP7261709B2 (ja) 2023-04-20
TW202125094A (zh) 2021-07-01

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