JP7258332B2 - スピントルク発振素子 - Google Patents

スピントルク発振素子 Download PDF

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Publication number
JP7258332B2
JP7258332B2 JP2018218165A JP2018218165A JP7258332B2 JP 7258332 B2 JP7258332 B2 JP 7258332B2 JP 2018218165 A JP2018218165 A JP 2018218165A JP 2018218165 A JP2018218165 A JP 2018218165A JP 7258332 B2 JP7258332 B2 JP 7258332B2
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sto
spin torque
torque oscillator
synchronization
layer
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JP2018218165A
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Japanese (ja)
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JP2020088088A5 (enExample
JP2020088088A (ja
Inventor
澄人 常木
章雄 福島
均 久保田
拓己 安藤
大貴 鈴木
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Priority to JP2018218165A priority Critical patent/JP7258332B2/ja
Priority to PCT/JP2019/036543 priority patent/WO2020105263A1/ja
Publication of JP2020088088A publication Critical patent/JP2020088088A/ja
Publication of JP2020088088A5 publication Critical patent/JP2020088088A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Hall/Mr Elements (AREA)
JP2018218165A 2018-11-21 2018-11-21 スピントルク発振素子 Active JP7258332B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018218165A JP7258332B2 (ja) 2018-11-21 2018-11-21 スピントルク発振素子
PCT/JP2019/036543 WO2020105263A1 (ja) 2018-11-21 2019-09-18 スピントルク発振素子

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JP2018218165A JP7258332B2 (ja) 2018-11-21 2018-11-21 スピントルク発振素子

Publications (3)

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JP2020088088A JP2020088088A (ja) 2020-06-04
JP2020088088A5 JP2020088088A5 (enExample) 2021-11-25
JP7258332B2 true JP7258332B2 (ja) 2023-04-17

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JP2018218165A Active JP7258332B2 (ja) 2018-11-21 2018-11-21 スピントルク発振素子

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JP (1) JP7258332B2 (enExample)
WO (1) WO2020105263A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019244662A1 (ja) * 2018-06-19 2019-12-26 ソニーセミコンダクタソリューションズ株式会社 磁気記憶素子、磁気ヘッド、磁気記憶装置、電子機器、及び磁気記憶素子の製造方法
CN111969954B (zh) * 2020-08-12 2022-10-21 北京航空航天大学合肥创新研究院 一种基于滤波器的自旋纳米振荡器同步方法
CN113097379B (zh) * 2021-03-23 2024-01-12 西安交通大学 包括磁耦合的自旋振荡器阵列的振荡器装置及其制造方法
CN113823733A (zh) * 2021-09-07 2021-12-21 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 自旋力矩振荡器三维串并联同步阵列、振荡器及制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231904A (ja) 2001-02-06 2002-08-16 Mitsubishi Electric Corp 磁気記憶装置および磁性体基板
WO2009054182A1 (ja) 2007-10-25 2009-04-30 Fuji Electric Holdings Co., Ltd. スピンバルブ素子及びその製造方法
JP2012204682A (ja) 2011-03-25 2012-10-22 Toshiba Corp 磁気発振素子及びスピン波装置
JP2012253344A (ja) 2011-05-31 2012-12-20 Hgst Netherlands B V ３端子スピントルク発振素子（ｓｔｏ）
JP2015060939A (ja) 2013-09-18 2015-03-30 株式会社東芝 磁気記録装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231904A (ja) 2001-02-06 2002-08-16 Mitsubishi Electric Corp 磁気記憶装置および磁性体基板
WO2009054182A1 (ja) 2007-10-25 2009-04-30 Fuji Electric Holdings Co., Ltd. スピンバルブ素子及びその製造方法
JP2012204682A (ja) 2011-03-25 2012-10-22 Toshiba Corp 磁気発振素子及びスピン波装置
JP2012253344A (ja) 2011-05-31 2012-12-20 Hgst Netherlands B V ３端子スピントルク発振素子（ｓｔｏ）
JP2015060939A (ja) 2013-09-18 2015-03-30 株式会社東芝 磁気記録装置

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JP2020088088A (ja) 2020-06-04
WO2020105263A1 (ja) 2020-05-28

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