WO2020105263A1 - スピントルク発振素子 - Google Patents

スピントルク発振素子

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Publication number
WO2020105263A1
WO2020105263A1 PCT/JP2019/036543 JP2019036543W WO2020105263A1 WO 2020105263 A1 WO2020105263 A1 WO 2020105263A1 JP 2019036543 W JP2019036543 W JP 2019036543W WO 2020105263 A1 WO2020105263 A1 WO 2020105263A1
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WO
WIPO (PCT)
Prior art keywords
sto
layer
spin torque
synchronization
stos
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/036543
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English (en)
French (fr)
Japanese (ja)
Inventor
澄人 常木
章雄 福島
久保田　均
拓己 安藤
大貴 鈴木
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National Institute of Advanced Industrial Science and Technology AIST
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National Institute of Advanced Industrial Science and Technology AIST
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Publication of WO2020105263A1 publication Critical patent/WO2020105263A1/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates generally to microwave oscillators, and more specifically to a spin torque oscillator (STO) used as a microwave oscillator.
  • STO spin torque oscillator
  • microwave microwave
  • Non-Patent Document 1 a perpendicular magnetic film in the free layer (oscillation layer), using a TMR element using a plane magnetization film to a fixed layer, the oscillation oscillation power 0.55MyuW, the microwave half-value width 47MH Z Discloses STOs that can be made.
  • ⁇ STO can control the oscillation frequency etc. by the applied magnetic field and voltage.
  • the oscillation power is about 1 ⁇ W. Therefore, for practical use such as mounting on a portable electronic device, a small size and higher output STO are required.
  • Patent Document 2 is a technique based on the phase locking phenomenon caused by the interaction of the high-frequency magnetic field generated in each element, and in order to enhance the effect of direct interaction, each element It is necessary to perform optimization considering the parameters that interact with each other, which is a large-scale optimization problem and is not easy.
  • the object of the present invention is to optimize the structure of the STOs to obtain a frequency difference (hereinafter referred to as a synchronization width) capable of achieving phase synchronization between the STOs due to interaction using the high frequency output of the STOs.
  • the purpose is to widen it to reduce the influence of manufacturing variations and improve the output (oscillation power) of the STO.
  • the STO according to one embodiment of the present invention has a layered structure in which a magnetization pinned layer containing CoFeB, a tunnel barrier layer containing MgO, and a magnetization free layer containing FeB are sequentially stacked, and the Permalloy layer containing NiFeB is magnetically pinned. It is characterized in that it is provided between the layer and the tunnel barrier layer.
  • the Ni composition ratio in NiFeB is in the range of 76 to 87 at%
  • the permalloy layer has a thickness of approximately 5 ⁇
  • the magnetization fixed layer has a thickness of approximately 23 ⁇ .
  • the tunnel barrier layer may have a thickness of approximately 10 ⁇
  • the magnetization free layer may have a thickness of approximately 50 ⁇ .
  • an STO array in which a plurality of STOs according to the above-described embodiment are arranged.
  • sync width between STO for example in the range of 9 ⁇ 11MH Z.
  • the synchronization width is obtained when the magnetic field applied to the STO is 360 to 390 mT and the voltage is 270 to 300 mV.
  • the synchronization width between the STOs can be widened, for example, in the range of 9 to 11 MH Z by a simple structure and operation control thereof. As a result, it is possible to mitigate the influence of manufacturing variations and improve the output (power spectrum density) of a plurality of STOs (STO arrays) due to the synchronization phenomenon.
  • FIG. 1A is a diagram showing the output (power spectrum density, PSD) of the current (conventional) STO before and after synchronization.
  • PSD power spectrum density
  • the upper two spectra A and B are the PSDs of the two STOs (A and B) before phase synchronization.
  • the synchronization width ⁇ f of both is as narrow as about 1 MHz, and since the synchronization width ⁇ f is narrower than the frequency difference before phase synchronization between the two STOs (A, B) due to manufacturing variations, a large output (PSD) after synchronization on the lower side is obtained.
  • Can't get (B) is a figure which shows the output (PSD) before and after synchronization of STO which is the target of the present invention.
  • the upper two spectra A and B are the PSDs of the two STOs (A and B) before phase synchronization.
  • the synchronization width ⁇ f of both is wide, at least 8 MHz or more, for example, about 9 to 11 MHz, and the synchronization width ⁇ f is wider than the frequency difference before the phase synchronization of the two STOs (A, B) due to manufacturing variations. Therefore, a large output (PSD) after synchronization on the lower side can be obtained.
  • the present invention provides a high output STO / STO array having a wide synchronization width ⁇ f as shown in (b).
  • FIG. 2 shows the configuration of the STO according to the embodiment of the present invention.
  • a cylindrical STO 10 is shown as an example, but the shape is not limited to a cylindrical shape, and its cross section may be, for example, an ellipse, a square, a rectangle, or another shape.
  • the STO 10 is composed of a magnetization fixed layer 1 and a magnetization free layer 4 made of a ferromagnetic material, a tunnel barrier layer 3 made of a non-magnetic layer which is intermediate between the magnetization fixed layer 1 and the magnetization free layer 4, and a permalloy layer between the magnetization fixed layer 1 and the tunnel barrier layer 3.
  • Including 2
  • the magnetization fixed layer 1 contains, for example, CoFeB
  • the magnetization free layer 4 contains FeB
  • the tunnel barrier layer 3 contains MgO
  • the permalloy layer 2 contains NiFeB.
  • the permalloy layer (NiFeB) 2 is provided between the magnetization fixed layer 1 and the tunnel barrier layer 3.
  • FIG. 3 is a schematic diagram showing a configuration of a STO synchronization phenomenon measuring circuit according to an embodiment of the present invention.
  • the measurement circuit in addition to the high frequency prober (not shown) for applying the magnetic field H for oscillating the STO 10 and the DC power supply 12 for applying the DC voltage V DC , in order to cause the synchronization phenomenon.
  • Each of these devices can be controlled by a personal computer (PC) 15.
  • PC personal computer
  • the measurement circuit of FIG. 3 further includes a bias tee composed of an inductor L and a capacitor C in order to prevent the signal from the DC power supply 12 from going to other than the STO 10.
  • a bias tee composed of an inductor L and a capacitor C in order to prevent the signal from the DC power supply 12 from going to other than the STO 10.
  • the signal strength of the high frequency signal generator 13 is larger than that of the high frequency signal of the STO 10. Therefore, if a synchronization experiment is performed in which the frequency F ac of the high frequency signal output from the high frequency signal generator 13 and the oscillation frequency f STO of the STO 10 are substantially the same, the signal of the STO 10 cannot be analyzed.
  • the frequency F ac of the high frequency signal output from the high frequency signal generator 13 is set to a value approximately double the frequency f STO of the STO 10 .
  • f ac is swept so that
  • the power divider 16 can be used to input the high frequency signal of the high frequency signal generator 13 to the STO 10 and simultaneously measure the oscillation signal of the STO 10.
  • Each device in FIG. 3 is connected using a coaxial cable.
  • NiFeB was used for the permalloy layer, and the STO was actually manufactured by changing the composition ratio and the film thickness.
  • the Ni composition ratio (at%) of NiFeB and the film thickness ( ⁇ ) at that time are shown in Table 1 below. More precisely, the Ni composition ratio means the atomic composition percentage (at%) of Ni.
  • 70Ni / FeB in the table indicates that the Ni composition ratio in NiFeB is 70 at%, and FeB is 30 at%.
  • FeB is an alloy of Fe (iron) and B (boron), and its atomic composition percentage (at%) ratio is 80:20.
  • the diameter of the produced cylindrical STO 10 is about 350 nm.
  • the magnetization fixed layer 1 is CoFeB and has a thickness of about 23 ⁇
  • the tunnel barrier layer 3 is MgO and has a thickness of about 10 ⁇
  • the magnetization free layer 4 is FeB and has a thickness of about 50 ⁇ .
  • FIG. 4 shows the result (relationship between frequency and power spectral density PSD) of the phase-locking experiment using the measurement circuit of FIG. 3 for the manufactured STO.
  • the change of the power spectrum density PSD of STO at the time is shown.
  • FIG. 6 illustrates the relationship between the applied voltage and the synchronization width of the STO of the embodiment of the invention manufactured.
  • FIG. 7 illustrates the relationship between the applied magnetic field and the synchronization width of the STO of the embodiment of the invention manufactured.
  • the synchronization width (MHz) when changed is shown.
  • the synchronization width changes greatly in accordance with the change in the magnetic field H applied to the STO. It can be seen from FIG. 7 that it is necessary to apply a magnetic field H in the range of about 360 to 390 mT in order to obtain a synchronization width of 9 MHz or more.
  • FIG. 8 shows the relationship between the applied voltage, the applied magnetic field, and the sync width of the manufactured STO of one embodiment of the present invention.
  • FIG. 8 is a graph obtained by combining the graphs of FIGS. 6 and 7 into a single diagram.
  • the range surrounded by the diagonal lines in FIGS. 6 and 7 shows the range of about 9 MHz or more with a wide synchronization width also illustrated in FIGS. There is.
  • the range is such that the magnetic field H is about 360 to 390 mT and the DC voltage is about 270 to 300 mV.
  • the maximum synchronization width of STO having a Ni composition ratio of 78 at% (78Ni / FeB) in Table 1 whose measurement results are shown in FIGS. 6 to 8 was about 10.2 MHz.
  • FIG. 9 shows the relationship between the Ni composition ratio of NiFeB of STO and the synchronization width in one embodiment of the present invention.
  • the table of FIG. 9A is the same as the above-mentioned table 1.
  • the graph of (b) shows the maximum synchronization width when the NiFeB film thickness is 2.5 ⁇ and the Ni composition ratio is changed to 70, 78, and 85 at%. From the graph of FIG. 9, a large synchronization width cannot be obtained with STO with Ni at 70 at%, but a synchronization width of about 9 MHz or more at 85 at% and about 10 MHz or more at 78 at% Ni can be obtained. From the graph of FIG. 9, for example, in order to obtain a synchronization width of 9 MHz or more, the Ni composition ratio may be in the range of about 76 to 85 at%.
  • the synchronization width can be widened to 9 to 11 MHz. It was found that the film thickness of NiFeB at that time is preferably about 5 ⁇ , the magnetic field applied to the STO is about 360 to 390 mT, and the DC voltage is about 270 to 300 mV.
  • FIG. 10 shows an arrangement example of the STO array.
  • STO 10 only the STO 10 and a DC current source for applying a DC voltage are shown.
  • each STO 10 in the figure only three layers of the magnetization fixed layer, the tunnel barrier layer and the magnetization free layer are shown, and the thin permalloy layer existing between the tunnel barrier layer and the magnetization free layer is omitted.
  • FIG. 10A shows a configuration in which three STOs 10 are connected in parallel.
  • B is a configuration in which three STOs 10 are connected in series.
  • C is a serial / parallel connection configuration in which three sets (3 rows) of the configuration in which the three STOs 10 of (a) are connected in parallel are connected in series.
  • D is a serial / parallel connection configuration in which three sets (3 columns) of the configuration in which the three STOs 10 of (b) are connected in series are connected in parallel.
  • the number of STOs is not limited to 3, and any number of STOs of at least 2 can be used.
  • the STO / STO array of the present invention can be widely used as a small-sized and high-power oscillating element in portable electronic devices such as mobile phones, tablets, and notebook computers.

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PCT/JP2019/036543 2018-11-21 2019-09-18 スピントルク発振素子 Ceased WO2020105263A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-218165 2018-11-21
JP2018218165A JP7258332B2 (ja) 2018-11-21 2018-11-21 スピントルク発振素子

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111969954A (zh) * 2020-08-12 2020-11-20 北京航空航天大学合肥创新研究院 一种基于滤波器的自旋纳米振荡器同步方法
CN113097379A (zh) * 2021-03-23 2021-07-09 西安交通大学 包括磁耦合的自旋振荡器阵列的振荡器装置及其制造方法
CN113823733A (zh) * 2021-09-07 2021-12-21 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 自旋力矩振荡器三维串并联同步阵列、振荡器及制备方法
US11462681B2 (en) * 2018-06-19 2022-10-04 Sony Semiconductor Solutions Corporation Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009054182A1 (ja) * 2007-10-25 2009-04-30 Fuji Electric Holdings Co., Ltd. スピンバルブ素子及びその製造方法
JP2012204682A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 磁気発振素子及びスピン波装置
JP2012253344A (ja) * 2011-05-31 2012-12-20 Hgst Netherlands B V ３端子スピントルク発振素子（ｓｔｏ）
JP2015060939A (ja) * 2013-09-18 2015-03-30 株式会社東芝 磁気記録装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4818519B2 (ja) 2001-02-06 2011-11-16 ルネサスエレクトロニクス株式会社 磁気記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009054182A1 (ja) * 2007-10-25 2009-04-30 Fuji Electric Holdings Co., Ltd. スピンバルブ素子及びその製造方法
JP2012204682A (ja) * 2011-03-25 2012-10-22 Toshiba Corp 磁気発振素子及びスピン波装置
JP2012253344A (ja) * 2011-05-31 2012-12-20 Hgst Netherlands B V ３端子スピントルク発振素子（ｓｔｏ）
JP2015060939A (ja) * 2013-09-18 2015-03-30 株式会社東芝 磁気記録装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11462681B2 (en) * 2018-06-19 2022-10-04 Sony Semiconductor Solutions Corporation Magnetic storage element, magnetic head, magnetic storage device, electronic apparatus, and method for manufacturing magnetic storage element
CN111969954A (zh) * 2020-08-12 2020-11-20 北京航空航天大学合肥创新研究院 一种基于滤波器的自旋纳米振荡器同步方法
CN111969954B (zh) * 2020-08-12 2022-10-21 北京航空航天大学合肥创新研究院 一种基于滤波器的自旋纳米振荡器同步方法
CN113097379A (zh) * 2021-03-23 2021-07-09 西安交通大学 包括磁耦合的自旋振荡器阵列的振荡器装置及其制造方法
CN113097379B (zh) * 2021-03-23 2024-01-12 西安交通大学 包括磁耦合的自旋振荡器阵列的振荡器装置及其制造方法
CN113823733A (zh) * 2021-09-07 2021-12-21 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 自旋力矩振荡器三维串并联同步阵列、振荡器及制备方法

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