JP7255612B2 - カーボンナノチューブを用いた赤外線センサー及びその製造方法 - Google Patents
カーボンナノチューブを用いた赤外線センサー及びその製造方法 Download PDFInfo
- Publication number
- JP7255612B2 JP7255612B2 JP2020569509A JP2020569509A JP7255612B2 JP 7255612 B2 JP7255612 B2 JP 7255612B2 JP 2020569509 A JP2020569509 A JP 2020569509A JP 2020569509 A JP2020569509 A JP 2020569509A JP 7255612 B2 JP7255612 B2 JP 7255612B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon nanotubes
- carbon nanotube
- electrode
- dispersion
- semiconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 206
- 239000002041 carbon nanotube Substances 0.000 title claims description 206
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims description 194
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000006185 dispersion Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 53
- 239000002736 nonionic surfactant Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 25
- 239000000693 micelle Substances 0.000 claims description 13
- 229910021404 metallic carbon Inorganic materials 0.000 claims description 12
- 238000011282 treatment Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000002612 dispersion medium Substances 0.000 claims description 6
- 125000000524 functional group Chemical group 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 3
- 238000001997 free-flow electrophoresis Methods 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 2
- 238000001132 ultrasonic dispersion Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 description 31
- 239000010410 layer Substances 0.000 description 25
- 239000002109 single walled nanotube Substances 0.000 description 19
- 239000004094 surface-active agent Substances 0.000 description 17
- -1 polyoxyethylene Polymers 0.000 description 14
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 13
- 239000000243 solution Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 7
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- HBXWUCXDUUJDRB-UHFFFAOYSA-N 1-octadecoxyoctadecane Chemical compound CCCCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCCCC HBXWUCXDUUJDRB-UHFFFAOYSA-N 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 238000005199 ultracentrifugation Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 150000005215 alkyl ethers Chemical class 0.000 description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000002238 carbon nanotube film Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- DTPCFIHYWYONMD-UHFFFAOYSA-N decaethylene glycol Polymers OCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO DTPCFIHYWYONMD-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000002563 ionic surfactant Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000009210 therapy by ultrasound Methods 0.000 description 3
- FFJCNSLCJOQHKM-CLFAGFIQSA-N (z)-1-[(z)-octadec-9-enoxy]octadec-9-ene Chemical compound CCCCCCCC\C=C/CCCCCCCCOCCCCCCCC\C=C/CCCCCCCC FFJCNSLCJOQHKM-CLFAGFIQSA-N 0.000 description 2
- CMCBDXRRFKYBDG-UHFFFAOYSA-N 1-dodecoxydodecane Chemical compound CCCCCCCCCCCCOCCCCCCCCCCCC CMCBDXRRFKYBDG-UHFFFAOYSA-N 0.000 description 2
- FDCJDKXCCYFOCV-UHFFFAOYSA-N 1-hexadecoxyhexadecane Chemical compound CCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCC FDCJDKXCCYFOCV-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920001214 Polysorbate 60 Polymers 0.000 description 2
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 238000005119 centrifugation Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001983 poloxamer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OJSUWTDDXLCUFR-HGZMBBKESA-N (2r,3s,4r,5r)-n-[3-[[(4r)-4-[(3r,5r,8r,9s,10s,12s,13r,14s,17r)-3,12-dihydroxy-10,13-dimethyl-2,3,4,5,6,7,8,9,11,12,14,15,16,17-tetradecahydro-1h-cyclopenta[a]phenanthren-17-yl]pentanoyl]-[3-[[(2r,3s,4r,5r)-2,3,4,5,6-pentahydroxyhexanoyl]amino]propyl]amino Chemical compound C([C@H]1CC2)[C@H](O)CC[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@H]([C@@H](CCC(=O)N(CCCNC(=O)[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO)CCCNC(=O)[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO)C)[C@@]2(C)[C@@H](O)C1 OJSUWTDDXLCUFR-HGZMBBKESA-N 0.000 description 1
- JYCQQPHGFMYQCF-UHFFFAOYSA-N 4-tert-Octylphenol monoethoxylate Chemical compound CC(C)(C)CC(C)(C)C1=CC=C(OCCO)C=C1 JYCQQPHGFMYQCF-UHFFFAOYSA-N 0.000 description 1
- ZVZFHCZCIBYFMZ-UHFFFAOYSA-N 6-methylheptoxybenzene Chemical compound CC(C)CCCCCOC1=CC=CC=C1 ZVZFHCZCIBYFMZ-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- QRLVDLBMBULFAL-UHFFFAOYSA-N Digitonin Natural products CC1CCC2(OC1)OC3C(O)C4C5CCC6CC(OC7OC(CO)C(OC8OC(CO)C(O)C(OC9OCC(O)C(O)C9OC%10OC(CO)C(O)C(OC%11OC(CO)C(O)C(O)C%11O)C%10O)C8O)C(O)C7O)C(O)CC6(C)C5CCC4(C)C3C2C QRLVDLBMBULFAL-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- 229920004896 Triton X-405 Polymers 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- UVYVLBIGDKGWPX-KUAJCENISA-N digitonin Chemical compound O([C@@H]1[C@@H]([C@]2(CC[C@@H]3[C@@]4(C)C[C@@H](O)[C@H](O[C@H]5[C@@H]([C@@H](O)[C@@H](O[C@H]6[C@@H]([C@@H](O[C@H]7[C@@H]([C@@H](O)[C@H](O)CO7)O)[C@H](O)[C@@H](CO)O6)O[C@H]6[C@@H]([C@@H](O[C@H]7[C@@H]([C@@H](O)[C@H](O)[C@@H](CO)O7)O)[C@@H](O)[C@@H](CO)O6)O)[C@@H](CO)O5)O)C[C@@H]4CC[C@H]3[C@@H]2[C@@H]1O)C)[C@@H]1C)[C@]11CC[C@@H](C)CO1 UVYVLBIGDKGWPX-KUAJCENISA-N 0.000 description 1
- UVYVLBIGDKGWPX-UHFFFAOYSA-N digitonine Natural products CC1C(C2(CCC3C4(C)CC(O)C(OC5C(C(O)C(OC6C(C(OC7C(C(O)C(O)CO7)O)C(O)C(CO)O6)OC6C(C(OC7C(C(O)C(O)C(CO)O7)O)C(O)C(CO)O6)O)C(CO)O5)O)CC4CCC3C2C2O)C)C2OC11CCC(C)CO1 UVYVLBIGDKGWPX-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000010130 dispersion processing Methods 0.000 description 1
- NLEBIOOXCVAHBD-QKMCSOCLSA-N dodecyl beta-D-maltoside Chemical compound O[C@@H]1[C@@H](O)[C@H](OCCCCCCCCCCCC)O[C@H](CO)[C@H]1O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 NLEBIOOXCVAHBD-QKMCSOCLSA-N 0.000 description 1
- 239000002079 double walled nanotube Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 229930182478 glucoside Natural products 0.000 description 1
- 125000003827 glycol group Chemical group 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000002608 ionic liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- HEGSGKPQLMEBJL-UHFFFAOYSA-N n-octyl beta-D-glucopyranoside Natural products CCCCCCCCOC1OC(CO)C(O)C(O)C1O HEGSGKPQLMEBJL-UHFFFAOYSA-N 0.000 description 1
- 229910021392 nanocarbon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- HEGSGKPQLMEBJL-RKQHYHRCSA-N octyl beta-D-glucopyranoside Chemical compound CCCCCCCCO[C@@H]1O[C@H](CO)[C@@H](O)[C@H](O)[C@H]1O HEGSGKPQLMEBJL-RKQHYHRCSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229960000502 poloxamer Drugs 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 229920000136 polysorbate Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/172—Sorting
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/168—After-treatment
- C01B32/174—Derivatisation; Solubilisation; Dispersion in solvents
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
- G01J5/023—Particular leg structure or construction or shape; Nanotubes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14649—Infrared imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
- H10K30/352—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles the inorganic nanostructures being nanotubes or nanowires, e.g. CdTe nanotubes in P3HT polymer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
基板と、
前記基板上の第1電極と、
前記基板上にあって、前記第1電極から離れている第2電極と、
前記第1電極と前記第2電極とに電気的に接続されているカーボンナノチューブ層
を備え、
前記カーボンナノチューブ層は、半導体型カーボンナノチューブをカーボンナノチューブの総量の66質量%超含み、かつ、カーボンナノチューブ層に含まれるカーボンナノチューブの60%以上が、0.6~1.5nmの範囲の直径、及び100nm~5μmの範囲の長さを有する、赤外線センサーが提供される。
赤外線センサーの製造方法であって、
前記赤外線センサーは、
基板と、
前記基板上の第1電極と、
前記基板上にあって、前記第1電極から離れている第2電極と、
前記第1電極と前記第2電極とに電気的に接続されているカーボンナノチューブ層
を備え、
カーボンナノチューブと非イオン性界面活性剤と分散媒とを混合してカーボンナノチューブを含む溶液を調製する工程と、
前記溶液を分散処理に供することにより、カーボンナノチューブを分散、切断してカーボンナノチューブ分散液を調製する工程と、
前記カーボンナノチューブ分散液を無担体電気泳動に供して、半導体型カーボンナノチューブと金属型カーボンナノチューブとを分離して、半導体型カーボンナノチューブを含む半導体型カーボンナノチューブ分散液を調製する工程と、
次の(a)~(c)のサブ工程によって、第1電極と第2電極とをカーボンナノチューブ層により接続する工程:
(a)前記半導体型カーボンナノチューブ分散液を基板上に塗布するサブ工程;
(b)前記半導体型カーボンナノチューブ分散液が塗布された基板を加熱処理するサブ工程;及び
(c)前記半導体型カーボンナノチューブ分散液を基板上に塗布するサブ工程の前、又は前記半導体型カーボンナノチューブ分散液が塗布された基板を加熱処理するサブ工程の前若しくは後に、基板上に第1電極及び第2電極を作製するサブ工程
と、を含む、赤外線センサーの製造方法が提供される。
(式中、n=好ましくは12~18、m=10~100、好ましくは20~100である)
(工程1)
単層カーボンナノチューブ((株)名城ナノカーボン、EC1.0(直径:1.1~1.5nm程度(平均直径1.2nm))100mgを石英ボートに入れ、真空雰囲気下で電気炉を使った熱処理を行った。熱処理温度は、900℃で時間は2時間で行った。熱処理後の重さは、80mgに減少し、表面官能基や不純物が除去されていることが分かった。得られた単層カーボンナノチューブをピンセットで破砕後、12mgを1wt%の界面活性剤(ポリオキシエチレン(100)ステアリルエーテル)水溶液40mlに浸漬させ、十分に沈めた後、超音波分散処理(BRANSON ADVANCD-DIGITAL SONIFIER装置(出力:50W))を3時間行った。これにより、溶液内にカーボンナノチューブの凝集物がなくなった。その後、50000rpm、10℃、60分の条件で超遠心分離処理を行った。この操作により、バンドルや残留触媒等を除去し、カーボンナノチューブ分散液を得た。この時、分散液をSiO2基板上に塗布、100℃で乾燥後、原子間力顕微鏡(AFM)観察を行った。その結果、単層カーボンナノチューブは、その70%が長さ500nm~1.5μmの範囲にあり、その平均の長さがおよそ800nmであることが分かった。一方、比較目的で、イオン性の界面活性剤(ドデシル硫酸ナトリウム(sodium dodecyl sulfate,SDS))を使って同様の条件で分散させると平均の長さがおよそ1.5μm以上になり長さが大きくなった。
カーボンナノチューブ分散液を図3の分離装置に導入した。ここで、内側のチューブ11を閉じた状態で導入口から水8(約15ml)、カーボンナノチューブ分散液9(約70ml)、2wt%界面活性剤水溶液10(約15ml)を入れ、その後、内側のチューブ11にも2wt%界面活性剤水溶液(約20ml)を入れた。その後、内側のチューブ11を開けることで、図3のような3層構造になった。120Vの電圧をかけることで、半導体型カーボンナノチューブが陽極側に移動した。一方、金属型カーボンナノチューブが陰極側に移動した。分離開始から約80時間後にきれいに分離した。分離工程は室温(約25℃)で実施した。陽極側に移動したカーボンナノチューブ分散液を光吸収スペクトルで分析すると、金属型カーボンナノチューブの成分が除去されていることが分かった。また、ラマンスペクトルから、99wt%が半導体型カーボンナノチューブであった。この時、単層カーボンナノチューブの直径は、約1.2nmが最も多く(70%以上)、平均直径は1.2nmであった。
シリコン基板に100nmのSiO2を被膜した基板を準備した。アセトン、イソプロピルアルコール、超純水中にそれぞれ順に浸漬し、超音波処理することで基板を洗浄した。窒素で乾燥後、酸素プラズマ処理を3分行った。0.1%のAPTES水溶液中に基板を30分浸漬した。水洗後、105℃で乾燥させた。得られた基板上に濃度を0.7wt%に調整されたカーボンナノチューブ分散液(約0.1ml)を滴下し、30分放置後、エタノールで洗浄後、110℃で乾燥した。大気中において200℃で加熱し、非イオン性界面活性剤等を除去した。その後、金を厚み100nmで、50μmの間隔で基板上の2か所に蒸着した。得られた基板上の電極間の領域を原子間力顕微鏡(AFM)観察した(図2)。界面活性剤が除去されたため、直径が1.1~1.5nm程度(平均直径1.2nm)の単層カーボンナノチューブがネット状に分散していることが分かった。AFM観察することにより算出した平均長さは1000nmであった(カーボンナノチューブの70%以上が0.8~1.2μmの範囲内であった)。また、界面活性剤の分子長が長いため、周囲の単層カーボンナノチューブが再凝集していないことが分かった。次に電極間にPMMAアニソール溶液を塗布することで、電極間のカーボンナノチューブを保護した後、酸素プラズマ処理で、電極付近の余分なカーボンナノチューブ等を除去した。その後、200℃、1時間乾燥した。
図4は、工程3で作製した赤外線センサーの温度を変えた時の抵抗値の変化である。そのTCR値(dR/RdT)は、300Kにおいて、約-3.3%/Kであった。この値は、比較例1や従来使用されている酸化バナジウムの-2%/Kを大きく上回ることが分かった。これは、カーボンナノチューブ層を構成するカーボンナノチューブのほとんどが直径が小さくバンドギャップが大きな半導体型カーボンナノチューブであるためである。また、非イオン性界面活性剤が容易に除去でき、且つ、界面活性剤のサイズが大きいため、バンドル形成が抑制され、孤立分散したカーボンナノチューブネットワークを形成したためである。
実施例1の工程1と同様に作製したカーボンナノチューブ分散液を、工程2の分離工程を行わず、工程3と同様なプロセスで赤外線センサーを作製した。この時のTCR値は、約-0.5%/Kであった。TCR値が低いのは、金属型カーボンナノチューブが多く含まれているためである。
実施例1の工程1において原料として直径の小さいカーボンナノチューブ0.8~1.1nm程度(平均直径0.9nm)を用いたこと以外は実施例1の工程1~3と同様なプロセスで、その少なくとも70%が直径が0.8~1.1nm程度(平均直径0.9nm)の単層カーボンナノチューブで赤外線センサーを作製した。図5は、赤外線センサーの温度を変えた時の抵抗値の変化である。そのTCR値(dR/RdT)は、300Kにおいて、約-5.0%/Kであった。このTCR値が大きくなったのは、直径がさらに小さくなってバンドギャップが大きくなったためである。この結果から、カーボンナノチューブの直径を変えることで、TCR値を制御できることが分かった。
実施例1の工程1において原料として直径の大きいカーボンナノチューブ1.6~1.9nm程度(平均直径1.8nm)を用いたこと以外は実施例1の工程1~3と同様なプロセスで、その少なくとも70%が直径が1.6~1.9nm程度(平均直径1.8nm)の単層カーボンナノチューブで赤外線センサーを作製した。この時のTCR値は、約-2.0%/Kであった。直径が大きい場合は、バンドギャップが小さいためである。
2 電極1(第1電極)
3 カーボンナノチューブ膜(カーボンナノチューブ層)
4 電極2(第2電極)
5 陰極
6 陽極
7 注入口/排出口
8 水
9 カーボンナノチューブ分散液
10 界面活性剤溶液
11 内側チューブ
Claims (9)
- 基板と、
前記基板上の第1電極と、
前記基板上にあって、前記第1電極から離れている第2電極と、
前記第1電極と前記第2電極とに電気的に接続されているカーボンナノチューブ層
を備え、
前記カーボンナノチューブ層は、半導体型カーボンナノチューブをカーボンナノチューブの総量の67質量%以上含み、かつ、カーボンナノチューブ層に含まれる全カーボンナノチューブの60%以上(個数比率)が、0.6~1.5nmの範囲の直径、及び500nm~3μmの範囲の長さを有する、ボロメータ型赤外線センサー。 - 前記第1電極と前記第2電極との間の電極間距離が10μm~500μmである、請求項1記載のボロメータ型赤外線センサー。
- 前記カーボンナノチューブ層のカーボンナノチューブの数密度が1本/μm2~1000本/μm2である、請求項1又は2に記載のボロメータ型赤外線センサー。
- 前記半導体型カーボンナノチューブが、表面及び端の少なくとも一方に、表面官能基であるカルボキシル基、カルボニル基、及び水酸基から選択される少なくとも1種を有する、請求項1~3のいずれか一項に記載のボロメータ型赤外線センサー。
- 前記カーボンナノチューブ層が、半導体型カーボンナノチューブを、カーボンナノチューブの総量の90質量%以上含む、請求項1~4のいずれか一項に記載のボロメータ型赤外線センサー。
- ボロメータ型赤外線センサーの製造方法であって、
前記ボロメータ型赤外線センサーは、
基板と、
前記基板上の第1電極と、
前記基板上にあって、前記第1電極から離れている第2電極と、
前記第1電極と前記第2電極とに電気的に接続されているカーボンナノチューブ層
を備え、
カーボンナノチューブと非イオン性界面活性剤と分散媒とを混合してカーボンナノチューブを含む溶液を調製する工程と、
前記溶液を分散処理に供することにより、カーボンナノチューブを分散、切断してカーボンナノチューブ分散液を調製する工程と、
前記カーボンナノチューブ分散液を無担体電気泳動に供して、半導体型カーボンナノチューブと金属型カーボンナノチューブとを分離して、半導体型カーボンナノチューブを含む半導体型カーボンナノチューブ分散液を調製する工程と、
次の(a)~(c)のサブ工程によって、第1電極と第2電極とをカーボンナノチューブ層により接続する工程:
(a)前記半導体型カーボンナノチューブ分散液を基板上に塗布するサブ工程;
(b)前記半導体型カーボンナノチューブ分散液が塗布された基板を加熱処理するサブ工程;及び
(c)前記半導体型カーボンナノチューブ分散液を基板上に塗布するサブ工程の前、又は前記半導体型カーボンナノチューブ分散液が塗布された基板を加熱処理するサブ工程の前若しくは後に、基板上に第1電極及び第2電極を作製するサブ工程
と、を含み、
前記半導体型カーボンナノチューブ分散液は、半導体型カーボンナノチューブを分散液中のカーボンナノチューブの総量の67質量%以上含み、
前記半導体型カーボンナノチューブ分散液中の全カーボンナノチューブの60%以上(個数比率)が、0.6~1.5nmの範囲の直径、及び500nm~3μmの範囲の長さを有する、製造方法。 - 前記半導体型カーボンナノチューブ分散液のゼータ電位が+5mV~-40mVであり、該ゼータ電位は、水、臨界ミセル濃度~5質量%の下記式(1)で表される非イオン性界面活性剤、及び67質量%以上の半導体型カーボンナノチューブを含むカーボンナノチューブからなる半導体型カーボンナノチューブ分散液を用いて測定された値である、請求項6に記載の製造方法。
C n H 2n+1 (OCH 2 CH 2 ) m OH (1)
(式中、n=12~18、m=10~100である) - 前記半導体型カーボンナノチューブ分散液が、半導体型カーボンナノチューブを、カーボンナノチューブの総量の90質量%以上含む、請求項6又は7に記載の製造方法。
- 前記分散処理が超音波分散処理である、請求項6~8のいずれか一項に記載の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023054703A JP2023085406A (ja) | 2019-01-29 | 2023-03-30 | カーボンナノチューブを用いた赤外線センサー及びその製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019012928 | 2019-01-29 | ||
JP2019012928 | 2019-01-29 | ||
PCT/JP2020/001503 WO2020158455A1 (ja) | 2019-01-29 | 2020-01-17 | カーボンナノチューブを用いた赤外線センサー及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023054703A Division JP2023085406A (ja) | 2019-01-29 | 2023-03-30 | カーボンナノチューブを用いた赤外線センサー及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020158455A1 JPWO2020158455A1 (ja) | 2021-12-02 |
JP7255612B2 true JP7255612B2 (ja) | 2023-04-11 |
Family
ID=71840566
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020569509A Active JP7255612B2 (ja) | 2019-01-29 | 2020-01-17 | カーボンナノチューブを用いた赤外線センサー及びその製造方法 |
JP2023054703A Pending JP2023085406A (ja) | 2019-01-29 | 2023-03-30 | カーボンナノチューブを用いた赤外線センサー及びその製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023054703A Pending JP2023085406A (ja) | 2019-01-29 | 2023-03-30 | カーボンナノチューブを用いた赤外線センサー及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220109076A1 (ja) |
JP (2) | JP7255612B2 (ja) |
WO (1) | WO2020158455A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114689180A (zh) * | 2020-12-14 | 2022-07-01 | 清华大学 | 红外探测器及红外成像仪 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010163568A (ja) | 2009-01-16 | 2010-07-29 | Toray Ind Inc | 導電性組成物および導電性複合体 |
WO2010150808A1 (ja) | 2009-06-23 | 2010-12-29 | 日本電気株式会社 | ナノカーボン材料の分離方法、分離装置、及び分離済ナノカーボン分散溶液 |
JP2011166070A (ja) | 2010-02-15 | 2011-08-25 | Nec Corp | 半導体装置の製造方法 |
WO2012049801A1 (ja) | 2010-10-13 | 2012-04-19 | 日本電気株式会社 | 赤外線センサ材料の作製方法、赤外線センサ材料、赤外線センサ素子、赤外線イメージセンサ |
JP2015049207A (ja) | 2013-09-04 | 2015-03-16 | 公立大学法人首都大学東京 | 赤外線受光素子 |
JP2017001919A (ja) | 2015-06-12 | 2017-01-05 | 日本電気株式会社 | ナノカーボンの分離方法および分離装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3222582B1 (en) * | 2006-08-30 | 2019-05-22 | Northwestern University | Monodisperse single-walled carbon nanotube populations and related methods for providing same |
US10908025B2 (en) * | 2016-12-07 | 2021-02-02 | Carbon Solutions, Inc. | Patterned focal plane arrays of carbon nanotube thin film bolometers with high temperature coefficient of resistance and improved detectivity for infrared imaging |
US10830721B2 (en) * | 2017-04-28 | 2020-11-10 | Palo Alto Research Center Incorporated | Metal nanoparticle-decorated nanotubes for gas sensing |
-
2020
- 2020-01-17 JP JP2020569509A patent/JP7255612B2/ja active Active
- 2020-01-17 US US17/425,794 patent/US20220109076A1/en active Pending
- 2020-01-17 WO PCT/JP2020/001503 patent/WO2020158455A1/ja active Application Filing
-
2023
- 2023-03-30 JP JP2023054703A patent/JP2023085406A/ja active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010163568A (ja) | 2009-01-16 | 2010-07-29 | Toray Ind Inc | 導電性組成物および導電性複合体 |
WO2010150808A1 (ja) | 2009-06-23 | 2010-12-29 | 日本電気株式会社 | ナノカーボン材料の分離方法、分離装置、及び分離済ナノカーボン分散溶液 |
JP2011166070A (ja) | 2010-02-15 | 2011-08-25 | Nec Corp | 半導体装置の製造方法 |
WO2012049801A1 (ja) | 2010-10-13 | 2012-04-19 | 日本電気株式会社 | 赤外線センサ材料の作製方法、赤外線センサ材料、赤外線センサ素子、赤外線イメージセンサ |
JP2015049207A (ja) | 2013-09-04 | 2015-03-16 | 公立大学法人首都大学東京 | 赤外線受光素子 |
JP2017001919A (ja) | 2015-06-12 | 2017-01-05 | 日本電気株式会社 | ナノカーボンの分離方法および分離装置 |
Also Published As
Publication number | Publication date |
---|---|
US20220109076A1 (en) | 2022-04-07 |
JPWO2020158455A1 (ja) | 2021-12-02 |
WO2020158455A1 (ja) | 2020-08-06 |
JP2023085406A (ja) | 2023-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20130001089A1 (en) | Preparation of graphene sheets | |
JP2023085406A (ja) | カーボンナノチューブを用いた赤外線センサー及びその製造方法 | |
Tomašević-Ilić et al. | Transparent and conductive films from liquid phase exfoliated graphene | |
Chen et al. | Controlled thermal functionalization for dispersion enhancement of multi-wall carbon nanotube in organic solvents | |
US20220034720A1 (en) | Bolometer and method for manufacturing same | |
US20110155956A1 (en) | Fibers Including Nanoparticles And A Method Of Producing The Nanoparticles | |
KR20100121978A (ko) | 그라핀 박막의 형성 방법 | |
JP7259948B2 (ja) | カーボンナノチューブの配向層を有するボロメータ及びその製造方法 | |
JP6237967B1 (ja) | ナノカーボンの分離方法及び精製方法 | |
US11650104B2 (en) | Bolometer and method for manufacturing same | |
JP2012131655A (ja) | 組成物およびカーボンナノチューブ含有膜 | |
EP4180388A1 (en) | A poly(sulfur nitride) material, a suspension thereof and a corresponding production method | |
US20230384163A1 (en) | Bolometer and method for manufacturing same | |
US20230384166A1 (en) | Bolometer and method for manufacturing same | |
Lanche et al. | Routine fabrication of reduced graphene oxide microarray devices via all solution processing | |
Si et al. | Length-dependent performances of sodium deoxycholate-dispersed single-walled carbon nanotube thin-film transistors | |
WO2021240660A1 (ja) | ボロメータ材料、赤外線センサー、及び、その製造方法 | |
JP6426450B2 (ja) | 導電性グラファイトの製造方法及び導電性グラファイト | |
WO2019064597A1 (ja) | 単層カーボンナノチューブ混合物の分離方法、単層カーボンナノチューブ分散液 | |
KR101618975B1 (ko) | 그래핀 나노시트의 제조방법 | |
JP6908124B2 (ja) | ナノカーボンインクおよびそれを用いた半導体デバイスの製造方法 | |
US20230288262A1 (en) | Bolometer material, infrared sensor and method for manufacturing same | |
US20230160750A1 (en) | Bolometer and method for manufacturing same | |
Kaneko et al. | Position control and electrical characterization of single-walled carbon nanotubes debundled by density gradient ultracentrifugation | |
JP6530952B2 (ja) | 導電性グラファイトの製造方法及び導電膜 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210727 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220906 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221107 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230228 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230313 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7255612 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |