JP7254460B2 - 電子吸収変調器用の電子吸収バイアス回路 - Google Patents
電子吸収変調器用の電子吸収バイアス回路 Download PDFInfo
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- G02F1/0121—Operation of devices; Circuit arrangements, not otherwise provided for in this subclass
- G02F1/0123—Circuits for the control or stabilisation of the bias voltage, e.g. automatic bias control [ABC] feedback loops
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
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- H—ELECTRICITY
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- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
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- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5059—Laser transmitters using external modulation using a feed-forward signal generated by analysing the optical or electrical input
- H04B10/50593—Laser transmitters using external modulation using a feed-forward signal generated by analysing the optical or electrical input to control the modulating signal amplitude including amplitude distortion
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5059—Laser transmitters using external modulation using a feed-forward signal generated by analysing the optical or electrical input
- H04B10/50595—Laser transmitters using external modulation using a feed-forward signal generated by analysing the optical or electrical input to control the modulator DC bias
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/564—Power control
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- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
- H04B10/806—Arrangements for feeding power
- H04B10/808—Electrical power feeding of an optical transmission system
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- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
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- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
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- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
VM≦0;
VM=VM0+vm
であり、ここでVMは、電子吸収変調器に入力され、電子吸収変調器に電流を発生させて光通信用にレーザダイオードにより提供されるビームを変調する変調電圧であって、VM0は電子吸収変調器にVAとして供給される所要のバイアス電圧を表し、vmは光パワーを変調する変調電圧を表す。いくつかの実施形態において、VM0は温度依存である。例えば、制御デバイス102は、ファイバを介して出力として提供される光信号を設定(例えば、最適化)するために、VAをTOSAの動作温度の変化に基づいて変化させる信号を提供することができる。この場合には、VM0は温度が減少するにつれて減少し(例えば、より負になり)、温度が増加するにつれて増加する(例えば、より正になる)。
F(VM0+vm)=P0;
F(VM0)=P;
F(VM0-vm)=P1;
であり、ここでP0は最小変調光パワーを表し、Pは平均変調光パワーを表し、P1は最大変調光パワーを表す。この場合には、制御デバイス102は、最小変調光パワーと最大変調光パワーの各々が電子吸収変調器に供給されるバイアス電圧に基づいて電子吸収変調器によって達成されるように一組の制御信号を決定することができる。
Vn≦min[VM0(T)]
であり、ここでVnは電源により電子吸収駆動回路に提供される電圧を表し、VM0は電子吸収変調器に供給される電圧を表し、Tは電子吸収変調器の動作温度を表す。例えば、負電源は入力電圧(例えば、+3.3ボルト)を受信し、入力電圧及び制御デバイス102からの信号に基づいて出力電圧Vnを提供することができる。
Claims (13)
- 温度センサと、
前記温度センサから受信されるデータに基づいて温度依存制御信号を提供するコントローラと、
前記コントローラからの温度依存制御信号に基づいて出力電圧を供給する電源と、
前記電源により提供される出力電圧及び前記コントローラから受信される別の制御信号に基づいてバイアス電圧を出力する電子吸収駆動回路と、
を備える、電子吸収バイアス回路。 - 前記別の制御信号は前記温度センサから受信されるデータに基づいて決定される別の温度依存制御信号である、請求項1に記載の電子吸収バイアス回路。
- 前記コントローラは更に、前記データに基づいて温度の変化を特定し、前記温度依存制御信号を前記温度の変化の特定に基づいて前記電源の出力電圧の絶対値を変化するように決定する、請求項1に記載の電子吸収バイアス回路。
- 前記電源は負電源である、請求項1に記載の電子吸収バイアス回路。
- 前記出力電圧は、電子吸収変調器の温度の関数である直流出力電圧である、請求項1に記載の電子吸収バイアス回路。
- 前記温度センサから受信されるデータは電子吸収変調器の温度に関する温度データである、請求項1に記載の電子吸収バイアス回路。
- 前記温度依存制御信号は前記電子吸収駆動回路により消費電力又はワット損を減少させる、請求項1に記載の電子吸収バイアス回路。
- 制御デバイスで入力データを受信するステップであって、前記入力データはレーザダイオード及び電子吸収変調器と関連する温度を特定する情報を含む、ステップと、
前記制御デバイスにより電源及び駆動回路のための一組の制御信号を決定するステップであって、前記一組の制御信号は前記電子吸収変調器に供給されるバイアスを前記温度に基づいて変化させる、ステップと、
前記一組の制御信号を前記電源及び前記駆動回路に提供して前記駆動回路に供給される前記電源の出力電圧を前記温度に基づいて変化させるとともに、前記駆動回路により供給されるバイアスを前記温度に基づいて変化させるステップと、
を含む方法。 - 前記一組の制御信号を決定するステップは、
前記入力データに基づいて温度の低下を特定するステップと、
前記一組の制御信号を前記温度の低下の特定に基づいて前記電源の出力電圧の絶対値を増加させるように決定するステップと、
を備える、請求項8に記載の方法。 - 前記一組の制御信号を決定するステップは、
前記入力データに基づいて前記温度の増加を特定するステップと、
前記一組の制御信号を前記温度の増加の特定に基づいて前記電源の出力電圧の絶対値を減少させるように決定するステップと、
を備える、請求項8に記載の方法。 - 前記電源は直流負電圧電源である、請求項8に記載の方法。
- 前記レーザダイオードは少なくとも100ギガビット/秒のデータレートと関連する光トランシーバに含まれている、請求項8に記載の方法。
- 前記一組の制御信号は前記出力電圧を温度に基づいて変化させ、温度に基づいて変化しない一定の出力電圧と比較して、消費電力の低減又はワット損の低減の少なくとも一つをもたらす、請求項8に記載の方法。
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US15/987,515 US10615877B2 (en) | 2017-08-25 | 2018-05-23 | Electro-absorption bias circuit for electro-absorption modulators |
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JP2011086683A (ja) | 2009-10-13 | 2011-04-28 | Opnext Japan Inc | 光通信モジュール及び光通信モジュールの制御方法 |
JP2012168410A (ja) | 2011-02-15 | 2012-09-06 | Nec Corp | 光送信装置、光送受信装置、制御方法および制御プログラム |
JP2013076776A (ja) | 2011-09-29 | 2013-04-25 | Fujitsu Optical Components Ltd | 光送信機、及び波形補償方法 |
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