JP7248441B2 - 画像表示素子 - Google Patents

画像表示素子 Download PDF

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Publication number
JP7248441B2
JP7248441B2 JP2019015837A JP2019015837A JP7248441B2 JP 7248441 B2 JP7248441 B2 JP 7248441B2 JP 2019015837 A JP2019015837 A JP 2019015837A JP 2019015837 A JP2019015837 A JP 2019015837A JP 7248441 B2 JP7248441 B2 JP 7248441B2
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light
layer
wavelength
wavelength conversion
micro led
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JP2019153783A (ja
JP2019153783A5 (enExample
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勝次 井口
幸司 高橋
秀典 河西
ロバーツ ジョン
コール ネイサン
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Devices (AREA)
JP2019015837A 2018-03-02 2019-01-31 画像表示素子 Active JP7248441B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018038038 2018-03-02
JP2018038038 2018-03-02

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JP2019153783A JP2019153783A (ja) 2019-09-12
JP2019153783A5 JP2019153783A5 (enExample) 2021-10-14
JP7248441B2 true JP7248441B2 (ja) 2023-03-29

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US (2) US11133434B2 (enExample)
JP (1) JP7248441B2 (enExample)
CN (1) CN110224000B (enExample)

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KR102551354B1 (ko) * 2018-04-20 2023-07-04 삼성전자 주식회사 반도체 발광 소자 및 그 제조 방법
KR102653015B1 (ko) * 2018-07-18 2024-03-29 삼성전자주식회사 발광 장치, 운송 수단용 헤드램프, 및 그를 포함하는 운송 수단
KR102064806B1 (ko) * 2018-10-16 2020-01-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR102742044B1 (ko) * 2018-11-05 2024-12-13 삼성전자주식회사 발광 소자
JP7414419B2 (ja) * 2019-07-30 2024-01-16 キヤノン株式会社 発光素子及び発光素子の製造方法
KR102813369B1 (ko) * 2019-10-23 2025-05-27 삼성전자주식회사 디스플레이 장치 및 이의 제조 방법
WO2021095603A1 (ja) 2019-11-11 2021-05-20 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
CN110908183B (zh) * 2019-11-12 2021-07-23 惠州市华星光电技术有限公司 显示器
KR102742687B1 (ko) * 2019-12-03 2024-12-16 삼성전자주식회사 반도체 발광 소자
JP7388908B2 (ja) 2019-12-17 2023-11-29 シャープ福山レーザー株式会社 表示装置
WO2021192157A1 (ja) * 2020-03-26 2021-09-30 シャープ株式会社 発光素子、および表示装置
TWI747272B (zh) * 2020-05-08 2021-11-21 旭豐半導體股份有限公司 具有透紫外光基板的微芯片陣列光學組件製造方法及該組件
TWI794983B (zh) * 2020-05-08 2023-03-01 旭豐半導體股份有限公司 具有透紫外光基板的微芯片陣列光學組件製法及該組件
CN113629091A (zh) * 2020-05-08 2021-11-09 旭丰半导体股份有限公司 具有透紫外光基板的微芯片列阵光学组件制造方法及该组件
CN113629092A (zh) * 2020-05-08 2021-11-09 旭丰半导体股份有限公司 具有透光基板的微芯片列阵光学组件制造方法及该组件
GB2595252B (en) * 2020-05-19 2023-10-11 Plessey Semiconductors Ltd Monolithic RGB micro LED display
GB2595250B (en) * 2020-05-19 2022-09-28 Plessey Semiconductors Ltd Array of light emitting devices with reduced optical crosstalk
JP7091598B2 (ja) * 2020-05-20 2022-06-28 日亜化学工業株式会社 発光装置の製造方法
CN113782552A (zh) * 2020-06-10 2021-12-10 旭丰半导体股份有限公司 具有微芯片阵列的光学组件制造方法及该组件
EP4170734A4 (en) 2020-06-18 2024-06-19 Nichia Corporation METHOD FOR PRODUCING AN IMAGE DISPLAY DEVICE AND IMAGE DISPLAY DEVICE
KR102734419B1 (ko) * 2020-07-03 2024-11-26 삼성디스플레이 주식회사 표시 장치
JP7510820B2 (ja) 2020-08-31 2024-07-04 シャープ福山レーザー株式会社 画像表示素子
TWI858136B (zh) * 2020-09-18 2024-10-11 許華珍 一種顯示裝置
WO2022113949A1 (ja) 2020-11-25 2022-06-02 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP7517970B2 (ja) * 2020-12-02 2024-07-17 シャープ福山レーザー株式会社 画像表示素子
CN114822281A (zh) * 2021-01-28 2022-07-29 中强光电股份有限公司 显示装置、波长转换模块及其制造方法
CN114038984B (zh) * 2021-12-02 2023-03-31 业成科技（成都）有限公司 微发光二极体显示器和其形成方法
JP2023124312A (ja) * 2022-02-25 2023-09-06 株式会社レゾナック 感光性樹脂組成物、硬化物、遮光パターン付基材及びその製造方法並びにマイクロｌｅｄディスプレイ及びその製造方法
CN114924444A (zh) 2022-03-30 2022-08-19 绵阳惠科光电科技有限公司 显示装置及其显示面板、阵列基板
CN115036340B (zh) * 2022-05-16 2025-03-28 京东方科技集团股份有限公司 一种发光二极管器件及其制备方法、显示装置
CN114975731A (zh) * 2022-05-18 2022-08-30 Tcl华星光电技术有限公司 发光器件及其制作方法
JP7458582B2 (ja) * 2022-05-24 2024-04-01 日亜化学工業株式会社 発光装置の製造方法

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JP2019153783A (ja) 2019-09-12
US12199213B2 (en) 2025-01-14
CN110224000B (zh) 2023-05-23
US11133434B2 (en) 2021-09-28
CN110224000A (zh) 2019-09-10
US20220005972A1 (en) 2022-01-06
US20190273179A1 (en) 2019-09-05

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