JP7244348B2 - プラズマ処理装置、温度制御方法および温度制御プログラム - Google Patents

プラズマ処理装置、温度制御方法および温度制御プログラム Download PDF

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JP7244348B2
JP7244348B2 JP2019090851A JP2019090851A JP7244348B2 JP 7244348 B2 JP7244348 B2 JP 7244348B2 JP 2019090851 A JP2019090851 A JP 2019090851A JP 2019090851 A JP2019090851 A JP 2019090851A JP 7244348 B2 JP7244348 B2 JP 7244348B2
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heater
temperature
plasma
power
wafer
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Japanese (ja)
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JP2020188098A (ja
JP2020188098A5 (enExample
Inventor
信介 岡
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019090851A priority Critical patent/JP7244348B2/ja
Priority to TW109114252A priority patent/TWI842882B/zh
Priority to CN202010373310.3A priority patent/CN111933508B/zh
Priority to KR1020200053860A priority patent/KR102773259B1/ko
Priority to US16/872,632 priority patent/US11546970B2/en
Publication of JP2020188098A publication Critical patent/JP2020188098A/ja
Publication of JP2020188098A5 publication Critical patent/JP2020188098A5/ja
Priority to US18/072,438 priority patent/US12063717B2/en
Priority to JP2023036144A priority patent/JP7507914B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0202—Switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019090851A 2019-05-13 2019-05-13 プラズマ処理装置、温度制御方法および温度制御プログラム Active JP7244348B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2019090851A JP7244348B2 (ja) 2019-05-13 2019-05-13 プラズマ処理装置、温度制御方法および温度制御プログラム
TW109114252A TWI842882B (zh) 2019-05-13 2020-04-29 電漿處理裝置、溫度控制方法及溫度控制程式
KR1020200053860A KR102773259B1 (ko) 2019-05-13 2020-05-06 플라즈마 처리 장치, 온도 제어 방법, 및 온도 제어 프로그램
CN202010373310.3A CN111933508B (zh) 2019-05-13 2020-05-06 等离子体处理装置、温度控制方法以及记录介质
US16/872,632 US11546970B2 (en) 2019-05-13 2020-05-12 Plasma processing apparatus and temperature control method
US18/072,438 US12063717B2 (en) 2019-05-13 2022-11-30 Plasma processing apparatus, and temperature control method
JP2023036144A JP7507914B2 (ja) 2019-05-13 2023-03-09 プラズマ処理装置、温度制御方法および温度制御プログラム

Applications Claiming Priority (1)

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JP2019090851A JP7244348B2 (ja) 2019-05-13 2019-05-13 プラズマ処理装置、温度制御方法および温度制御プログラム

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JP2020188098A JP2020188098A (ja) 2020-11-19
JP2020188098A5 JP2020188098A5 (enExample) 2022-04-21
JP7244348B2 true JP7244348B2 (ja) 2023-03-22

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US (2) US11546970B2 (enExample)
JP (2) JP7244348B2 (enExample)
KR (1) KR102773259B1 (enExample)
CN (1) CN111933508B (enExample)
TW (1) TWI842882B (enExample)

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* Cited by examiner, † Cited by third party
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US12014921B2 (en) * 2018-10-16 2024-06-18 Lam Research Corporation Plasma enhanced wafer soak for thin film deposition
TW202531282A (zh) * 2018-11-30 2025-08-01 日商東京威力科創股份有限公司 電漿處理裝置
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
JP7426915B2 (ja) * 2020-09-14 2024-02-02 東京エレクトロン株式会社 プラズマ処理装置、熱抵抗導出方法及び熱抵抗導出プログラム
JP7601511B2 (ja) * 2021-06-25 2024-12-17 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN119522475A (zh) * 2022-07-22 2025-02-25 东京毅力科创株式会社 监视方法和等离子体处理装置
TWI839989B (zh) * 2022-12-02 2024-04-21 緯創資通股份有限公司 包括監測警示模組之液冷系統、用於液冷系統之監測警示方法以及包括其之電子裝置
TW202509701A (zh) * 2023-04-17 2025-03-01 日商東京威力科創股份有限公司 電腦程式、資訊處理裝置、及資訊處理方法
KR102867331B1 (ko) * 2023-06-21 2025-10-01 주식회사 뉴파워 프라즈마 정전척에 전달되는 고주파 전력 조절을 이용한 공정 균일도 향상 장치
WO2025142536A1 (ja) * 2023-12-27 2025-07-03 東京エレクトロン株式会社 プラズマ処理装置、予測方法、予測プログラム、及び情報処理装置

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JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2010050178A (ja) 2008-08-20 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2017011169A (ja) 2015-06-24 2017-01-12 東京エレクトロン株式会社 温度制御方法
JP2017228230A (ja) 2016-06-24 2017-12-28 東京エレクトロン株式会社 基板処理システムおよび温度制御方法
JP2019091880A (ja) 2017-11-16 2019-06-13 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム

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JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム

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JP2009302390A (ja) 2008-06-16 2009-12-24 Hitachi High-Technologies Corp 試料温度の制御方法
JP2010050178A (ja) 2008-08-20 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2017011169A (ja) 2015-06-24 2017-01-12 東京エレクトロン株式会社 温度制御方法
JP2017228230A (ja) 2016-06-24 2017-12-28 東京エレクトロン株式会社 基板処理システムおよび温度制御方法
JP2019091880A (ja) 2017-11-16 2019-06-13 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム

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Publication number Publication date
KR102773259B1 (ko) 2025-02-25
CN111933508A (zh) 2020-11-13
JP7507914B2 (ja) 2024-06-28
TW202107610A (zh) 2021-02-16
US11546970B2 (en) 2023-01-03
JP2020188098A (ja) 2020-11-19
US12063717B2 (en) 2024-08-13
US20230105165A1 (en) 2023-04-06
KR20200131168A (ko) 2020-11-23
JP2023067998A (ja) 2023-05-16
CN111933508B (zh) 2024-07-02
TWI842882B (zh) 2024-05-21
US20200367320A1 (en) 2020-11-19

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