TWI842882B - 電漿處理裝置、溫度控制方法及溫度控制程式 - Google Patents

電漿處理裝置、溫度控制方法及溫度控制程式 Download PDF

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Publication number
TWI842882B
TWI842882B TW109114252A TW109114252A TWI842882B TW I842882 B TWI842882 B TW I842882B TW 109114252 A TW109114252 A TW 109114252A TW 109114252 A TW109114252 A TW 109114252A TW I842882 B TWI842882 B TW I842882B
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TW
Taiwan
Prior art keywords
heater
temperature
plasma
wafer
thermal resistance
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Application number
TW109114252A
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English (en)
Chinese (zh)
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TW202107610A (zh
Inventor
岡信介
Original Assignee
日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0202—Switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B1/00—Details of electric heating devices
    • H05B1/02—Automatic switching arrangements specially adapted to apparatus ; Control of heating devices
    • H05B1/0227—Applications
    • H05B1/023—Industrial applications
    • H05B1/0233—Industrial applications for semiconductors manufacturing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW109114252A 2019-05-13 2020-04-29 電漿處理裝置、溫度控制方法及溫度控制程式 TWI842882B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019090851A JP7244348B2 (ja) 2019-05-13 2019-05-13 プラズマ処理装置、温度制御方法および温度制御プログラム
JP2019-090851 2019-05-13

Publications (2)

Publication Number Publication Date
TW202107610A TW202107610A (zh) 2021-02-16
TWI842882B true TWI842882B (zh) 2024-05-21

Family

ID=73221900

Family Applications (1)

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TW109114252A TWI842882B (zh) 2019-05-13 2020-04-29 電漿處理裝置、溫度控制方法及溫度控制程式

Country Status (5)

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US (2) US11546970B2 (enExample)
JP (2) JP7244348B2 (enExample)
KR (1) KR102773259B1 (enExample)
CN (1) CN111933508B (enExample)
TW (1) TWI842882B (enExample)

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* Cited by examiner, † Cited by third party
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US12014921B2 (en) * 2018-10-16 2024-06-18 Lam Research Corporation Plasma enhanced wafer soak for thin film deposition
TW202531282A (zh) * 2018-11-30 2025-08-01 日商東京威力科創股份有限公司 電漿處理裝置
JP7244348B2 (ja) * 2019-05-13 2023-03-22 東京エレクトロン株式会社 プラズマ処理装置、温度制御方法および温度制御プログラム
JP7426915B2 (ja) * 2020-09-14 2024-02-02 東京エレクトロン株式会社 プラズマ処理装置、熱抵抗導出方法及び熱抵抗導出プログラム
JP7601511B2 (ja) * 2021-06-25 2024-12-17 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN119522475A (zh) * 2022-07-22 2025-02-25 东京毅力科创株式会社 监视方法和等离子体处理装置
TWI839989B (zh) * 2022-12-02 2024-04-21 緯創資通股份有限公司 包括監測警示模組之液冷系統、用於液冷系統之監測警示方法以及包括其之電子裝置
TW202509701A (zh) * 2023-04-17 2025-03-01 日商東京威力科創股份有限公司 電腦程式、資訊處理裝置、及資訊處理方法
KR102867331B1 (ko) * 2023-06-21 2025-10-01 주식회사 뉴파워 프라즈마 정전척에 전달되는 고주파 전력 조절을 이용한 공정 균일도 향상 장치
WO2025142536A1 (ja) * 2023-12-27 2025-07-03 東京エレクトロン株式会社 プラズマ処理装置、予測方法、予測プログラム、及び情報処理装置

Citations (4)

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US20070084847A1 (en) * 2005-09-30 2007-04-19 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
US20090219969A1 (en) * 2008-03-03 2009-09-03 Canon Anelva Corporation Substrate surface temperature measurement method, substrate processing apparatus using the same, and semiconductor device manufacturing method
US20160378092A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Temperature control method
US20180102267A1 (en) * 2016-10-11 2018-04-12 Tokyo Electron Limited Temperature controlling apparatus, temperature controlling method, and placing table

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FR2680231B1 (fr) * 1991-08-07 1993-11-19 Nitruvid Four de type puits a chauffage par resistance pour le traitement de pieces metalliques.
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
TWI281833B (en) * 2004-10-28 2007-05-21 Kyocera Corp Heater, wafer heating apparatus and method for manufacturing heater
JP4486135B2 (ja) * 2008-01-22 2010-06-23 東京エレクトロン株式会社 温度制御機構およびそれを用いた処理装置
JP5433171B2 (ja) 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
JP2010050178A (ja) 2008-08-20 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP2014158009A (ja) * 2012-07-03 2014-08-28 Hitachi High-Technologies Corp 熱処理装置
JP6313983B2 (ja) * 2014-01-29 2018-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
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Publication number Priority date Publication date Assignee Title
US20070084847A1 (en) * 2005-09-30 2007-04-19 Tokyo Electron Limited Stage, substrate processing apparatus, plasma processing apparatus, control method for stage, control method for plasma processing apparatus, and storage media
US20090219969A1 (en) * 2008-03-03 2009-09-03 Canon Anelva Corporation Substrate surface temperature measurement method, substrate processing apparatus using the same, and semiconductor device manufacturing method
US20160378092A1 (en) * 2015-06-24 2016-12-29 Tokyo Electron Limited Temperature control method
US20180102267A1 (en) * 2016-10-11 2018-04-12 Tokyo Electron Limited Temperature controlling apparatus, temperature controlling method, and placing table

Also Published As

Publication number Publication date
KR102773259B1 (ko) 2025-02-25
CN111933508A (zh) 2020-11-13
JP7507914B2 (ja) 2024-06-28
TW202107610A (zh) 2021-02-16
US11546970B2 (en) 2023-01-03
JP2020188098A (ja) 2020-11-19
JP7244348B2 (ja) 2023-03-22
US12063717B2 (en) 2024-08-13
US20230105165A1 (en) 2023-04-06
KR20200131168A (ko) 2020-11-23
JP2023067998A (ja) 2023-05-16
CN111933508B (zh) 2024-07-02
US20200367320A1 (en) 2020-11-19

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