JP7231720B2 - パッケージおよびパッケージ用の金属枠体 - Google Patents
パッケージおよびパッケージ用の金属枠体 Download PDFInfo
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- JP7231720B2 JP7231720B2 JP2021515872A JP2021515872A JP7231720B2 JP 7231720 B2 JP7231720 B2 JP 7231720B2 JP 2021515872 A JP2021515872 A JP 2021515872A JP 2021515872 A JP2021515872 A JP 2021515872A JP 7231720 B2 JP7231720 B2 JP 7231720B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 55
- 239000002184 metal Substances 0.000 title claims description 55
- 238000007747 plating Methods 0.000 claims description 145
- 239000013078 crystal Substances 0.000 claims description 86
- 229910000510 noble metal Inorganic materials 0.000 claims description 41
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 170
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000007689 inspection Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011104 metalized film Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 2
- 229910003267 Ni-Co Inorganic materials 0.000 description 2
- 229910003262 Ni‐Co Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003266 NiCo Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
- C25D5/14—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium two or more layers being of nickel or chromium, e.g. duplex or triplex layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electroplating Methods And Accessories (AREA)
- Chemically Coating (AREA)
Description
図1は、本実施の形態における電子機器500の構成を概略的に示す断面図である。電子機器500は、パッケージ100と、電子部品501と、ボンディングワイヤ502と、蓋体512と、接合層511とを有している。パッケージ100はそのキャビティ内に、電子部品501が実装されるための実装面RMを有している。電子部品501は実装面RMに実装されている。実装方法は任意であるが、電子部品501と実装面RMとは互いに、例えば、ろう材層(図示せず)によって接合されていてよい。ボンディングワイヤ502は、電子部品501と、パッケージ100の外部接続端子50とを互いに接続している。蓋体512は、パッケージ100に取り付けられることによって、パッケージ100が有するキャビティを封止している。具体的には、蓋体512とパッケージ100とが互いに接合層511によって接合されている。接合層511は、例えば、樹脂を含有する接着剤からなる。電子部品501は、高い気密性を有する環境下に保持される必要性の高いものであってよく、例えばパワー半導体素子である。パワー半導体素子は高周波用半導体素子であってよい。高周波用半導体素子はおおよそ、数十MHz(例えば30MHz)以上30GHz以下の周波数で動作する半導体素子である。この場合、電子機器500は高周波モジュールである。高周波用途に適したパワー半導体素子は、典型的には、LDMOS(横方向拡散MOS:Lateral Diffused MOS)トランジスタ、またはGaN(窒化ガリウム)トランジスタである。
図6は、パッケージ100(図2)の製造方法の一工程を概略的に示す断面図である。まず、ヒートシンク板10と、枠体30と、リードフレーム50とが準備される。ヒートシンク板10は、例えば、鋳造および焼成のいずれかまたはその組み合わせによって形成され得る。このように形成されたヒートシンク板10の表面SFは研磨されなくてよい。言い換えれば、複数の結晶粒からなる表面SFを有するヒートシンク板10が、表面SFを研磨することなく準備されてよい。次に、これら部材が接合層40によって互いに接合される。それにより、図示された構成が得られる。
図7は、比較例のパッケージ100Aにおける実装面RM上での光反射の様子を模式的に示す部分断面図である。パッケージ100Aは、第1中間めっき層21が形成されることなく、第2中間めっき層22Aおよび貴金属めっき層23Aが形成されることによって作製されている。第2中間めっき層22Aは、無配向性の第1中間めっき層21(図5)によって表面SFから隔てられていないので、ヒートシンク板10の表面SFをなす結晶粒C1~C5のむらの影響を受けて成長する。具体的には、第2中間めっき層22Aは、ヒートシンク板10の表面SFをなす結晶粒C1~C5における各結晶方位のむらの影響を受けて成長する。よって、第2中間めっき層22A上に形成される貴金属めっき層23Aも、結晶粒C1~C5のむらの影響を受けて成長する。具体的には、第2中間めっき層22A上に形成される貴金属めっき層23Aも、結晶粒C1~C5における各結晶方位のむらの影響を受けて成長する。その結果、表面SF実装面RMは、比較的小さな結晶粒が集まっている箇所と、大きな結晶粒が占める箇所とを有する。前者の箇所への入射光LTaの反射光は比較的拡散されやすい。一方、後者の箇所への入射光LTbの反射光は比較的強くなりやすい。その結果、貴金属めっき層23Aの光沢むらが大きくなる。
図9は、本実施の形態のパッケージ100における実装面RM上での光反射の様子を模式的に示す部分断面図である。本実施の形態によれば、ヒートシンク板10の表面SF上に、結晶粒C1~C5に対して無配向である第1中間めっき層21が形成される。具体的には、ヒートシンク板10の表面SF上に、結晶粒C1~C5における各結晶方位に対して無配向である第1中間めっき層21が形成される。これにより、第1中間めっき層21上に形成される第2中間めっき層22および貴金属めっき層23は、ヒートシンク板10の表面SFをなす結晶粒C1~C5のむらの影響を受けることなく形成される。具体的には、第1中間めっき層21上に形成される第2中間めっき層22および貴金属めっき層23は、ヒートシンク板10の表面SFをなす結晶粒C1~C5における各結晶方位のむらの影響を受けることなく形成される。よって、結晶粒C1~C5のむらを反映しての貴金属めっき層23の成長むらが防止される。具体的には、結晶粒C1~C5における各結晶方位のむらを反映しての貴金属めっき層23の成長むらが防止される。その結果、入射光LTの反射光の分散状態が均一となりやすい。よって、貴金属めっき層23の光沢むらを抑えることができる。
下記に、No.1~5のパッケージの作製条件と、当該パッケージが有する実装面RMへの自動外観検査の結果とを示す。
20 :積層めっき
21 :第1中間めっき層
22 :第2中間めっき層
23 :貴金属めっき層
30 :枠体
31 :絶縁枠体
32 :メタライズ膜
33 :めっき膜
40 :接合層
50 :リードフレーム(外部接続端子)
100 :パッケージ
500 :電子機器
501 :電子部品
502 :ボンディングワイヤ
511 :接合層
512 :蓋体
C1~C5:結晶粒
RM :実装面
SF :表面
Claims (14)
- 複数の結晶粒からなる表面を有する金属基材と、
前記金属基材の前記複数の結晶粒上に直接形成され、ニッケル元素を含有し、多結晶構造を有し、前記金属基材の前記複数の結晶粒における各結晶方位に対して無配向である第1中間めっき層と、
前記第1中間めっき層上に直接形成された第2中間めっき層と、
前記第2中間めっき層上に形成された貴金属めっき層と、
を有する金属部材を備え、
前記金属部材は、電子部品が実装されるための実装面を有するヒートシンク板であり、
前記ヒートシンク板上に配置された枠体と、
前記枠体上に取り付けられたリードフレームと、
をさらに備えるパッケージ。 - 前記電子部品はパワー半導体素子である、請求項1に記載のパッケージ。
- 前記金属基材の前記複数の結晶粒は面内方向において第1の平均結晶粒径を有し、前記第1中間めっき層は面内方向において前記第1の平均結晶粒径よりも小さい第2の結晶粒径を有する、請求項1または2に記載のパッケージ。
- 前記金属基材の前記表面は非研磨面である、請求項1から3のいずれか1項に記載のパッケージ。
- 前記金属基材の前記表面にはベイルビー層が形成されていない、請求項1から4のいずれか1項に記載のパッケージ。
- 前記第2中間めっき層はニッケル元素を含有している、請求項1から5のいずれか1項に記載のパッケージ。
- 前記第2中間めっき層は、前記第1中間めっき層の組成と異なる組成を有する、請求項1から6のいずれか1項に記載のパッケージ。
- 前記第1中間めっき層はニッケルからなり、前記第2中間めっき層はニッケル合金からなる、請求項1から7のいずれか1項に記載のパッケージ。
- 前記ニッケル合金はコバルト元素を含有している、請求項8に記載のパッケージ。
- 前記金属基材の前記表面は銅元素を含有している、請求項1から9のいずれか1項に記載のパッケージ。
- 前記貴金属めっき層は金層を有する、請求項1から10のいずれか1項に記載のパッケージ。
- 前記貴金属めっき層はパラジウム層を有する、請求項1から11のいずれか1項に記載のパッケージ。
- 前記第1中間めっき層の表面粗さは、0.3μm以上の最大高さRyを有している、請求項1から12のいずれか1項に記載のパッケージ。
- 複数の結晶粒からなる表面を有する金属基材と、
前記金属基材の前記複数の結晶粒上に直接形成され、ニッケル元素を含有し、多結晶構造を有し、前記金属基材の前記複数の結晶粒における各結晶方位に対して無配向である第1中間めっき層と、
前記第1中間めっき層上に直接形成された第2中間めっき層と、
前記第2中間めっき層上に形成された貴金属めっき層と、
を備える、パッケージ用の金属枠体。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001152385A (ja) | 1999-09-23 | 2001-06-05 | Lucent Technol Inc | コーティングされた金属製品 |
JP2006303492A (ja) | 2005-04-15 | 2006-11-02 | Samsung Techwin Co Ltd | 半導体パッケージ用のリードフレーム |
JP2015030892A (ja) | 2013-08-05 | 2015-02-16 | 株式会社Shカッパープロダクツ | 銅条、めっき付銅条及びリードフレーム |
JP2018022817A (ja) | 2016-08-05 | 2018-02-08 | Shマテリアル株式会社 | リードフレーム、樹脂付きリードフレーム、光半導体装置、及びリードフレームの製造方法 |
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JP2858197B2 (ja) * | 1993-04-16 | 1999-02-17 | 株式会社三井ハイテック | 半導体装置用リードフレーム |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2001152385A (ja) | 1999-09-23 | 2001-06-05 | Lucent Technol Inc | コーティングされた金属製品 |
JP2006303492A (ja) | 2005-04-15 | 2006-11-02 | Samsung Techwin Co Ltd | 半導体パッケージ用のリードフレーム |
JP2015030892A (ja) | 2013-08-05 | 2015-02-16 | 株式会社Shカッパープロダクツ | 銅条、めっき付銅条及びリードフレーム |
JP2018022817A (ja) | 2016-08-05 | 2018-02-08 | Shマテリアル株式会社 | リードフレーム、樹脂付きリードフレーム、光半導体装置、及びリードフレームの製造方法 |
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