JP7228736B1 - 太陽電池および太陽電池の製造方法、光起電力モジュール - Google Patents
太陽電池および太陽電池の製造方法、光起電力モジュール Download PDFInfo
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
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- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000000969 carrier Substances 0.000 description 13
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- 230000000052 comparative effect Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 6
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- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
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- 229910052810 boron oxide Inorganic materials 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
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- 239000002253 acid Substances 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
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- 229910052801 chlorine Inorganic materials 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
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- 239000011133 lead Substances 0.000 description 1
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Abstract
Description
比較例
Claims (19)
- N型ベースと、
前記N型ベースの第1面に設けられたP型エミッタと、
ここで、前記P型エミッタが第1部分と第2部分を有し、前記第1部分の頂面が第1ピラミッド構造を含み、前記第1ピラミッド構造の稜線の少なくとも一部に、前記第1ピラミッド構造の隣接する2つの斜面と接触し、前記第1ピラミッド構造の中心に対して陥凹または突出した遷移面を有し、前記少なくとも一部の稜線が不規則な変形を有し、前記第1ピラミッド構造の少なくとも一部の頂面が、球体または球様体であるサブ構造を含み、前記第2部分の頂面が、稜線が直線的である第2ピラミッド構造を含み、ここで、前記第1部分のシート抵抗が10ohm/sq~500ohm/sqであり、前記第1部分の頂面ドーピング濃度が1E17atom/cm3~8E19atom/cm3であり、前記第2部分のシート抵抗が100ohm/sq~1000ohm/sqであり、前記第2部分の頂面ドーピング濃度が1E16atom/cm3~5E19atom/cm3であり、
前記N型ベースの第2面に位置しかつ前記N型ベースから離れる方向に順に設けられたトンネル層およびドープ導電層と、
を備えることを特徴とする太陽電池。
- 前記第1ピラミッド構造の高さは、0.1μm~5μmであり、
前記第1ピラミッド構造の底部の一次元寸法は、0.5μm~5μmである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1部分のP型エミッタのドーピング元素と前記第2部分のP型エミッタのドーピング元素とは、同じ導電型であり、かつ、前記第1部分と前記第2部分のドーピング元素は三価元素の一つである、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1部分と前記第2部分のドーピング元素は、ホウ素元素またはガリウム元素のいずれか一つを含む、
ことを特徴とする請求項3に記載の太陽電池。 - 前記第1部分のシート抵抗は、前記第2部分のシート抵抗よりも小さい、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1部分の頂面ドーピング濃度は、前記第2部分の頂面ドーピング濃度よりも小さくない、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1部分の接合深さは、前記第2部分の接合深さよりも小さくない、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1部分の接合深さと前記第2部分の接合深さとの比の値が、2以上である、
ことを特徴とする請求項7に記載の太陽電池。
- 前記第1部分の接合深さは、0.2μm~10μmであり、
前記第2部分の接合深さは、0.05μm~5μmである、
ことを特徴とする請求項8に記載の太陽電池。 - 前記第1部分の頂面ドーピング濃度と前記第1部分の底面ドーピング濃度との差は、8E19atom/cm3~1E17atom/cm3である、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第2部分の頂面ドーピング濃度と前記第2部分の底面ドーピング濃度との差は、5E19atom/cm3~1E16atom/cm3である、
ことを特徴とする請求項1に記載の太陽電池。
- 前記第1ピラミッド構造の少なくとも1つの斜面における少なくとも一部の表面は、前記第1ピラミッド構造の中心に対して陥凹または突出している、
ことを特徴とする請求項1に記載の太陽電池。 - 前記N型ベースの第1面に設けられ、前記第1部分のP型エミッタに電気的に接続された第1金属電極をさらに備える、
ことを特徴とする請求項1に記載の太陽電池。 - 前記第1金属電極の幅は、前記第1部分のP型エミッタの幅以下である、
ことを特徴とする請求項13に記載の太陽電池。 - N型ベースを提供することと、
前記N型ベースの第1面にP型エミッタが形成されることと、
ここで、前記P型エミッタが第1部分と第2部分を有し、前記第1部分の頂面が第1ピラミッド構造を含み、前記第1ピラミッド構造の稜線の少なくとも一部に、前記第1ピラミッド構造の隣接する2つの斜面と接触し、前記第1ピラミッド構造の中心に対して陥凹または突出した遷移面を有し、前記少なくとも一部の稜線が不規則な変形を有し、前記第1ピラミッド構造の少なくとも一部の頂面が、球体または球様体であるサブ構造を含み、前記第2部分の頂面が、稜線が直線的である第2ピラミッド構造を含み、ここで、前記第1部分のシート抵抗が10ohm/sq~500ohm/sqであり、前記第1部分の頂面ドーピング濃度が1E17atom/cm3~8E19atom/cm3であり、前記第2部分のシート抵抗が100ohm/sq~1000ohm/sqであり、前記第2部分の頂面ドーピング濃度が1E16atom/cm3~5E19atom/cm3であり、
前記N型ベースの第2面に、前記N型ベースから離れる方向においてトンネル層およびドープ導電層が順次に形成されることと、
を含むことを特徴とする太陽電池の製造方法。
- 前記P型エミッタが形成される方法は、
初期N型ベースを提供することと、
前記初期N型ベースの頂面に、含まれる元素が三価元素のうちの一つである三価ドーピング源を堆積させることと、
プリセット領域の前記初期N型ベースの頂面を、外部エネルギー源処理プロセスによって処理し、前記外部エネルギー源処理プロセスによって処理された前記三価ドーピング源が、前記初期N型ベースの内部に拡散されることと、
前記初期N型ベースを高温処理して前記初期N型ベース内に前記P型エミッタを形成し、前記初期N型ベースが前記P型エミッタの頂面を露出させ、前記初期N型ベースにおいて前記P型エミッタ以外の領域が、前記N型ベースを形成しており、ここで、前記プリセット領域の前記初期N型ベース内に前記第1部分のP型エミッタが形成され、前記プリセット領域以外の前記初期N型ベース内に前記第2部分のP型エミッタが形成されることと、
を含むことを特徴とする請求項15に記載の太陽電池の製造方法。 - 前記の前記初期N型ベースの頂面に三価ドーピング源を堆積させる工程の実行中に、前記三価ドーピング源を含む第1薄膜層を形成し、ここで、堆積時間が20s~800s、温度が600℃~900℃であることと、
前記初期N型ベースを高温処理する工程の実行中に、酸素ガスを導入し、前記酸素ガスの流量を500sccm~50000sccm、時間を5min~300min、温度を800℃~1200℃として第2薄膜層を形成し、前記第2薄膜層の厚さを前記第1薄膜層の厚さよりも大きくすることと、
をさらに含むことを特徴とする請求項16に記載の太陽電池の製造方法。 - 前記第1部分の前記P型エミッタに電気的に接続された第1金属電極を形成することをさらに含む、
ことを特徴とする請求項15に記載の太陽電池の製造方法。 - 請求項1~14のいずれか1項に記載の太陽電池を複数接続してなるセルストリングと、
前記セルストリングの表面を覆うための封止層と、
前記封止層の前記セルストリングから離れた面を覆うためのカバープレートと、
を備えることを特徴とする光起電力モジュール。
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