JP7225815B2 - 半導体基板 - Google Patents
半導体基板 Download PDFInfo
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- JP7225815B2 JP7225815B2 JP2019005779A JP2019005779A JP7225815B2 JP 7225815 B2 JP7225815 B2 JP 7225815B2 JP 2019005779 A JP2019005779 A JP 2019005779A JP 2019005779 A JP2019005779 A JP 2019005779A JP 7225815 B2 JP7225815 B2 JP 7225815B2
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- semiconductor substrate
- alignment mark
- trench
- convex portion
- oxide film
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Description
10a 表面
10b 裏面
11 アライメントマーク
12 トレンチ
13 凸状部
14 傾斜面
15 平坦部
20 マスク
21 パターン
22 ペリクル
30 光源
31 レンズ
32 赤外線カメラ
1 酸化膜
2 レジスト
Claims (3)
- デバイスを構成するデバイス用トレンチとアライメントマークとを備える半導体基板であって、
前記アライメントマークは、
前記半導体基板に形成されたアライメントマーク用トレンチと、
前記半導体基板の表面から突出する凸状部とを含み、
前記凸状部の側面は、前記半導体基板の表面に対して傾斜する傾斜面であり、
前記アライメントマークは、前記半導体基板の裏面側から赤外線カメラで撮像され、
前記赤外線カメラで撮像した画像は、
前記凸状部が255階調であり、
前記アライメントマーク用トレンチが0階調であり、
前記傾斜面が中間の階調のグラデーションになる、半導体基板。 - 前記凸状部は、酸化膜で形成される、請求項1に記載の半導体基板。
- 前記アライメントマークは、前記半導体基板の表面に平行な平坦部を含む、請求項1または2に記載の半導体基板。
Priority Applications (1)
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JP2019005779A JP7225815B2 (ja) | 2019-01-17 | 2019-01-17 | 半導体基板 |
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JP2019005779A JP7225815B2 (ja) | 2019-01-17 | 2019-01-17 | 半導体基板 |
Publications (2)
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JP2020112766A JP2020112766A (ja) | 2020-07-27 |
JP7225815B2 true JP7225815B2 (ja) | 2023-02-21 |
Family
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JP2019005779A Active JP7225815B2 (ja) | 2019-01-17 | 2019-01-17 | 半導体基板 |
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JP (1) | JP7225815B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7536826B2 (ja) | 2021-07-12 | 2024-08-20 | キヤノン株式会社 | 基板、および基板の製造方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135695A (ja) | 1999-11-10 | 2001-05-18 | Asahi Kasei Microsystems Kk | 重ね合わせ精度測定方法とこの方法で使用されるマーク |
JP2002208545A (ja) | 2000-11-07 | 2002-07-26 | Nikon Corp | 光学特性検出方法及び露光方法 |
US20040043310A1 (en) | 2002-05-14 | 2004-03-04 | Tomoyuki Takeishi | Processing method, manufacturing method of semiconductor device, and processing apparatus |
JP2008010548A (ja) | 2006-06-28 | 2008-01-17 | Toppan Printing Co Ltd | アライメントマークおよび位置計測方法 |
US20100092599A1 (en) | 2008-10-10 | 2010-04-15 | Molecular Imprints, Inc. | Complementary Alignment Marks for Imprint Lithography |
JP2015090421A (ja) | 2013-11-06 | 2015-05-11 | Hoya株式会社 | 薄膜付き基板及び転写用マスクの製造方法 |
CN106483777A (zh) | 2015-08-31 | 2017-03-08 | 上海微电子装备有限公司 | 一种具有调焦功能的对准系统及对准方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02266512A (ja) * | 1989-04-07 | 1990-10-31 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
JPH10186682A (ja) * | 1996-12-24 | 1998-07-14 | Sanee Giken Kk | 露光装置およびその露光装置を用いた露光方法 |
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2019
- 2019-01-17 JP JP2019005779A patent/JP7225815B2/ja active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135695A (ja) | 1999-11-10 | 2001-05-18 | Asahi Kasei Microsystems Kk | 重ね合わせ精度測定方法とこの方法で使用されるマーク |
JP2002208545A (ja) | 2000-11-07 | 2002-07-26 | Nikon Corp | 光学特性検出方法及び露光方法 |
US20040043310A1 (en) | 2002-05-14 | 2004-03-04 | Tomoyuki Takeishi | Processing method, manufacturing method of semiconductor device, and processing apparatus |
JP2008010548A (ja) | 2006-06-28 | 2008-01-17 | Toppan Printing Co Ltd | アライメントマークおよび位置計測方法 |
US20100092599A1 (en) | 2008-10-10 | 2010-04-15 | Molecular Imprints, Inc. | Complementary Alignment Marks for Imprint Lithography |
JP2015090421A (ja) | 2013-11-06 | 2015-05-11 | Hoya株式会社 | 薄膜付き基板及び転写用マスクの製造方法 |
CN106483777A (zh) | 2015-08-31 | 2017-03-08 | 上海微电子装备有限公司 | 一种具有调焦功能的对准系统及对准方法 |
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JP2020112766A (ja) | 2020-07-27 |
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