JP7222659B2 - 露光装置、および物品製造方法 - Google Patents

露光装置、および物品製造方法 Download PDF

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Publication number
JP7222659B2
JP7222659B2 JP2018203253A JP2018203253A JP7222659B2 JP 7222659 B2 JP7222659 B2 JP 7222659B2 JP 2018203253 A JP2018203253 A JP 2018203253A JP 2018203253 A JP2018203253 A JP 2018203253A JP 7222659 B2 JP7222659 B2 JP 7222659B2
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substrate
error
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exposure
shot area
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Japanese (ja)
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JP2020071274A5 (enrdf_load_stackoverflow
JP2020071274A (ja
Inventor
隆 岡田
一史 水元
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2018203253A priority Critical patent/JP7222659B2/ja
Priority to KR1020190126651A priority patent/KR102568839B1/ko
Priority to CN201911033882.0A priority patent/CN111103765B/zh
Publication of JP2020071274A publication Critical patent/JP2020071274A/ja
Publication of JP2020071274A5 publication Critical patent/JP2020071274A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018203253A 2018-10-29 2018-10-29 露光装置、および物品製造方法 Active JP7222659B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018203253A JP7222659B2 (ja) 2018-10-29 2018-10-29 露光装置、および物品製造方法
KR1020190126651A KR102568839B1 (ko) 2018-10-29 2019-10-14 노광장치, 및 물품 제조방법
CN201911033882.0A CN111103765B (zh) 2018-10-29 2019-10-29 曝光装置以及物品制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018203253A JP7222659B2 (ja) 2018-10-29 2018-10-29 露光装置、および物品製造方法

Publications (3)

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JP2020071274A JP2020071274A (ja) 2020-05-07
JP2020071274A5 JP2020071274A5 (enrdf_load_stackoverflow) 2021-11-25
JP7222659B2 true JP7222659B2 (ja) 2023-02-15

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JP (1) JP7222659B2 (enrdf_load_stackoverflow)
KR (1) KR102568839B1 (enrdf_load_stackoverflow)
CN (1) CN111103765B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7560988B2 (ja) 2020-10-09 2024-10-03 キヤノン株式会社 ステージ装置、リソグラフィ装置、および物品の製造方法
JP2023048535A (ja) 2021-09-28 2023-04-07 キヤノン株式会社 露光装置、露光方法および半導体装置の製造方法
JP7610494B2 (ja) 2021-10-01 2025-01-08 キヤノン株式会社 露光装置、および物品の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077008A (ja) 1999-09-07 2001-03-23 Nec Corp 走査型露光装置とその露光方法
JP2002043214A (ja) 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
JP2009164296A (ja) 2007-12-28 2009-07-23 Canon Inc 露光装置およびデバイス製造方法
JP2010147482A (ja) 2008-12-22 2010-07-01 Carl Zeiss Smt Ag マイクロリソグラフィのための投影露光方法及び投影露光装置
JP2011003714A (ja) 2009-06-18 2011-01-06 Nikon Corp 露光方法、マスク、及びデバイス製造方法
JP2016072507A (ja) 2014-09-30 2016-05-09 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080165339A1 (en) * 2007-01-04 2008-07-10 Macronix International Co., Ltd. Spatial energy distribution by slit filter for step-and-scan system on multiple focus exposure
CN100535767C (zh) * 2007-11-30 2009-09-02 北京理工大学 一种调焦调平测量方法和装置
US20120064461A1 (en) * 2010-09-13 2012-03-15 Nikon Corporation Movable body apparatus, exposure apparatus, device manufacturing method, flat-panel display manufacturing method, and object exchange method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077008A (ja) 1999-09-07 2001-03-23 Nec Corp 走査型露光装置とその露光方法
JP2002043214A (ja) 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
JP2009164296A (ja) 2007-12-28 2009-07-23 Canon Inc 露光装置およびデバイス製造方法
JP2010147482A (ja) 2008-12-22 2010-07-01 Carl Zeiss Smt Ag マイクロリソグラフィのための投影露光方法及び投影露光装置
JP2011003714A (ja) 2009-06-18 2011-01-06 Nikon Corp 露光方法、マスク、及びデバイス製造方法
JP2016072507A (ja) 2014-09-30 2016-05-09 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法

Also Published As

Publication number Publication date
KR102568839B1 (ko) 2023-08-21
JP2020071274A (ja) 2020-05-07
CN111103765A (zh) 2020-05-05
CN111103765B (zh) 2023-04-14
KR20200049528A (ko) 2020-05-08

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