CN111103765B - 曝光装置以及物品制造方法 - Google Patents

曝光装置以及物品制造方法 Download PDF

Info

Publication number
CN111103765B
CN111103765B CN201911033882.0A CN201911033882A CN111103765B CN 111103765 B CN111103765 B CN 111103765B CN 201911033882 A CN201911033882 A CN 201911033882A CN 111103765 B CN111103765 B CN 111103765B
Authority
CN
China
Prior art keywords
substrate
error
exposure apparatus
original plate
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201911033882.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN111103765A (zh
Inventor
冈田隆
水元一史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN111103765A publication Critical patent/CN111103765A/zh
Application granted granted Critical
Publication of CN111103765B publication Critical patent/CN111103765B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70325—Resolution enhancement techniques not otherwise provided for, e.g. darkfield imaging, interfering beams, spatial frequency multiplication, nearfield lenses or solid immersion lenses
    • G03F7/70333—Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201911033882.0A 2018-10-29 2019-10-29 曝光装置以及物品制造方法 Active CN111103765B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-203253 2018-10-29
JP2018203253A JP7222659B2 (ja) 2018-10-29 2018-10-29 露光装置、および物品製造方法

Publications (2)

Publication Number Publication Date
CN111103765A CN111103765A (zh) 2020-05-05
CN111103765B true CN111103765B (zh) 2023-04-14

Family

ID=70420505

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911033882.0A Active CN111103765B (zh) 2018-10-29 2019-10-29 曝光装置以及物品制造方法

Country Status (3)

Country Link
JP (1) JP7222659B2 (enrdf_load_stackoverflow)
KR (1) KR102568839B1 (enrdf_load_stackoverflow)
CN (1) CN111103765B (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7560988B2 (ja) 2020-10-09 2024-10-03 キヤノン株式会社 ステージ装置、リソグラフィ装置、および物品の製造方法
JP2023048535A (ja) 2021-09-28 2023-04-07 キヤノン株式会社 露光装置、露光方法および半導体装置の製造方法
JP7610494B2 (ja) 2021-10-01 2025-01-08 キヤノン株式会社 露光装置、および物品の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077008A (ja) * 1999-09-07 2001-03-23 Nec Corp 走査型露光装置とその露光方法
JP2002043214A (ja) * 2000-07-26 2002-02-08 Toshiba Corp 走査型露光方法
US20080165339A1 (en) * 2007-01-04 2008-07-10 Macronix International Co., Ltd. Spatial energy distribution by slit filter for step-and-scan system on multiple focus exposure
CN100535767C (zh) * 2007-11-30 2009-09-02 北京理工大学 一种调焦调平测量方法和装置
JP2009164296A (ja) * 2007-12-28 2009-07-23 Canon Inc 露光装置およびデバイス製造方法
DE102008064504B4 (de) * 2008-12-22 2011-04-07 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsbelichtungsanlage für die Mikrolithographie
JP2011003714A (ja) * 2009-06-18 2011-01-06 Nikon Corp 露光方法、マスク、及びデバイス製造方法
US20120064461A1 (en) * 2010-09-13 2012-03-15 Nikon Corporation Movable body apparatus, exposure apparatus, device manufacturing method, flat-panel display manufacturing method, and object exchange method
JP6463935B2 (ja) * 2014-09-30 2019-02-06 キヤノン株式会社 露光装置、露光方法、およびデバイス製造方法

Also Published As

Publication number Publication date
JP7222659B2 (ja) 2023-02-15
KR102568839B1 (ko) 2023-08-21
JP2020071274A (ja) 2020-05-07
CN111103765A (zh) 2020-05-05
KR20200049528A (ko) 2020-05-08

Similar Documents

Publication Publication Date Title
JP5428250B2 (ja) 照明光学系、露光装置、光学素子およびその製造方法、並びにデバイス製造方法
EP2031640A1 (en) Variable slit device, illuminating device, exposure device, exposure method, and method of manufacturing device
US20090170042A1 (en) Exposure apparatus and device manufacturing method
JP2001313250A (ja) 露光装置、その調整方法、及び前記露光装置を用いるデバイス製造方法
CN111103765B (zh) 曝光装置以及物品制造方法
JPH04277612A (ja) 投影露光装置及び投影露光方法
JP2008153401A (ja) 露光装置及びデバイス製造方法
JP4497949B2 (ja) 露光装置
JP2003151884A (ja) 合焦方法、位置計測方法および露光方法並びにデバイス製造方法
KR102372650B1 (ko) 투영 광학계, 노광 장치, 물품의 제조 방법, 및 조정 방법
JP6015930B2 (ja) 露光方法及び露光装置、並びにデバイス製造方法
JP2011108851A (ja) 露光装置及びデバイスの製造方法
JP2010073835A (ja) 露光装置及びデバイス製造方法
KR101783076B1 (ko) 노광 방법, 노광 장치 및 물품의 제조 방법
JP2002229215A (ja) 露光方法及び露光装置
JP6771997B2 (ja) 露光装置、露光方法、および物品製造方法
KR102678914B1 (ko) 노광 장치 및 물품 제조 방법
JP2008124308A (ja) 露光方法及び露光装置、それを用いたデバイス製造方法
JP2009164356A (ja) 走査露光装置およびデバイス製造方法
JP2010118403A (ja) 走査型露光装置、及びデバイスの製造方法
KR102835651B1 (ko) 광학 장치, 노광 장치 및 노광 방법
CN119126509A (zh) 曝光装置、曝光方法以及物品制造方法
WO2024057622A1 (ja) 光学装置、露光装置および露光方法
TW202509680A (zh) 光學裝置、曝光裝置及曝光方法
JP2010166009A (ja) 露光装置およびデバイス製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant