JP7208720B2 - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP7208720B2
JP7208720B2 JP2018118080A JP2018118080A JP7208720B2 JP 7208720 B2 JP7208720 B2 JP 7208720B2 JP 2018118080 A JP2018118080 A JP 2018118080A JP 2018118080 A JP2018118080 A JP 2018118080A JP 7208720 B2 JP7208720 B2 JP 7208720B2
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conductive
semiconductor device
conductive sheet
sheet
shield
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Japanese (ja)
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JP2019220614A (ja
JP2019220614A5 (OSRAM
Inventor
セルゲイ ボロトフ
佑介 久保
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Dexerials Corp
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Dexerials Corp
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Priority to JP2018118080A priority Critical patent/JP7208720B2/ja
Priority to US16/973,765 priority patent/US11329005B2/en
Priority to PCT/JP2019/024363 priority patent/WO2019244950A1/ja
Priority to CN201980036901.7A priority patent/CN112236857A/zh
Priority to KR1020207036260A priority patent/KR102432180B1/ko
Publication of JP2019220614A publication Critical patent/JP2019220614A/ja
Publication of JP2019220614A5 publication Critical patent/JP2019220614A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
JP2018118080A 2018-06-21 2018-06-21 半導体装置及び半導体装置の製造方法 Active JP7208720B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018118080A JP7208720B2 (ja) 2018-06-21 2018-06-21 半導体装置及び半導体装置の製造方法
US16/973,765 US11329005B2 (en) 2018-06-21 2019-06-19 Semiconductor device and method of producing the same
PCT/JP2019/024363 WO2019244950A1 (ja) 2018-06-21 2019-06-19 半導体装置及び半導体装置の製造方法
CN201980036901.7A CN112236857A (zh) 2018-06-21 2019-06-19 半导体装置及半导体装置的制造方法
KR1020207036260A KR102432180B1 (ko) 2018-06-21 2019-06-19 반도체 장치 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018118080A JP7208720B2 (ja) 2018-06-21 2018-06-21 半導体装置及び半導体装置の製造方法

Publications (3)

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JP2019220614A JP2019220614A (ja) 2019-12-26
JP2019220614A5 JP2019220614A5 (OSRAM) 2021-05-20
JP7208720B2 true JP7208720B2 (ja) 2023-01-19

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JP2018118080A Active JP7208720B2 (ja) 2018-06-21 2018-06-21 半導体装置及び半導体装置の製造方法

Country Status (5)

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US (1) US11329005B2 (OSRAM)
JP (1) JP7208720B2 (OSRAM)
KR (1) KR102432180B1 (OSRAM)
CN (1) CN112236857A (OSRAM)
WO (1) WO2019244950A1 (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11240944B2 (en) * 2019-07-16 2022-02-01 Ford Global Technologies, Llc Rear method of heat sinking screens and electronics in enclosed areas
JP7389635B2 (ja) 2019-12-05 2023-11-30 カヤバ株式会社 作動流体供給システム
JP7396204B2 (ja) * 2020-06-01 2023-12-12 株式会社デンソー 冷却装置
CN120581525B (zh) * 2025-08-01 2025-10-28 成都天锐星通科技股份有限公司 一种屏蔽结构与射频芯片封装器件及电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148586A (ja) 1999-11-18 2001-05-29 Kitagawa Ind Co Ltd 電磁波シールドケース
JP2008166641A (ja) 2007-01-04 2008-07-17 Oita Univ 熱伝導性及び電気伝導性を有する電磁シールド用の膨張化炭素繊維複合材料とその製造方法
JP2016096249A (ja) 2014-11-14 2016-05-26 富士通株式会社 シールドカバー及び電子装置
JP2017057246A (ja) 2015-09-14 2017-03-23 リンテック株式会社 柔軟性シート、熱伝導部材、導電性部材、帯電防止部材、発熱体、電磁波遮蔽体、及び柔軟性シートの製造方法
JP2018073897A (ja) 2016-10-26 2018-05-10 リンテック株式会社 電波吸収体、半導体装置および複合シート
JP2018107272A (ja) 2016-12-26 2018-07-05 デクセリアルズ株式会社 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06169188A (ja) * 1992-12-01 1994-06-14 Fujitsu Ltd 放熱が良好な電子装置
US6111313A (en) * 1998-01-12 2000-08-29 Lsi Logic Corporation Integrated circuit package having a stiffener dimensioned to receive heat transferred laterally from the integrated circuit
US6224711B1 (en) * 1998-08-25 2001-05-01 International Business Machines Corporation Assembly process for flip chip package having a low stress chip and resulting structure
US7575955B2 (en) * 2004-01-06 2009-08-18 Ismat Corporation Method for making electronic packages
CN201104378Y (zh) * 2007-04-04 2008-08-20 华为技术有限公司 屏蔽和散热装置
JP2012164852A (ja) 2011-02-08 2012-08-30 Murata Mfg Co Ltd 半導体パッケージのシールド構造
US20130256894A1 (en) * 2012-03-29 2013-10-03 International Rectifier Corporation Porous Metallic Film as Die Attach and Interconnect
US9420734B2 (en) * 2014-04-01 2016-08-16 Advanced Micro Devices, Inc. Combined electromagnetic shield and thermal management device
JP6295238B2 (ja) 2014-10-31 2018-03-14 デクセリアルズ株式会社 熱伝導シート、熱伝導シートの製造方法、放熱部材及び半導体装置
CN206077940U (zh) * 2015-10-16 2017-04-05 莱尔德电子材料(深圳)有限公司 导热电磁干扰emi吸收器
CN105828571A (zh) * 2015-10-21 2016-08-03 维沃移动通信有限公司 一种电子设备芯片的屏蔽散热结构及电子设备
CN205389320U (zh) * 2016-03-23 2016-07-20 乐视控股（北京）有限公司 一种散热屏蔽装置
WO2017176521A1 (en) * 2016-04-04 2017-10-12 Commscope Technologies Llc Systems and methods for thermal management for high power density emi shielded electronic devices
CN206181696U (zh) * 2016-10-28 2017-05-17 中科创达软件科技（深圳）有限公司 一种低热阻的手机屏蔽散热结构及具有该结构的手机
JP6800129B2 (ja) * 2017-11-07 2020-12-16 古河電気工業株式会社 フィルム状接着剤、フィルム状接着剤を用いた半導体パッケージの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148586A (ja) 1999-11-18 2001-05-29 Kitagawa Ind Co Ltd 電磁波シールドケース
JP2008166641A (ja) 2007-01-04 2008-07-17 Oita Univ 熱伝導性及び電気伝導性を有する電磁シールド用の膨張化炭素繊維複合材料とその製造方法
JP2016096249A (ja) 2014-11-14 2016-05-26 富士通株式会社 シールドカバー及び電子装置
JP2017057246A (ja) 2015-09-14 2017-03-23 リンテック株式会社 柔軟性シート、熱伝導部材、導電性部材、帯電防止部材、発熱体、電磁波遮蔽体、及び柔軟性シートの製造方法
JP2018073897A (ja) 2016-10-26 2018-05-10 リンテック株式会社 電波吸収体、半導体装置および複合シート
JP2018107272A (ja) 2016-12-26 2018-07-05 デクセリアルズ株式会社 半導体装置

Also Published As

Publication number Publication date
KR102432180B1 (ko) 2022-08-16
US20210225777A1 (en) 2021-07-22
WO2019244950A1 (ja) 2019-12-26
CN112236857A (zh) 2021-01-15
KR20210010553A (ko) 2021-01-27
JP2019220614A (ja) 2019-12-26
US11329005B2 (en) 2022-05-10

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