JP7199617B1 - 半導体光利得素子及び光半導体装置 - Google Patents

半導体光利得素子及び光半導体装置 Download PDF

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Publication number
JP7199617B1
JP7199617B1 JP2022560307A JP2022560307A JP7199617B1 JP 7199617 B1 JP7199617 B1 JP 7199617B1 JP 2022560307 A JP2022560307 A JP 2022560307A JP 2022560307 A JP2022560307 A JP 2022560307A JP 7199617 B1 JP7199617 B1 JP 7199617B1
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Prior art keywords
layer
optical gain
semiconductor optical
semiconductor
gain element
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Japanese (ja)
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JPWO2024009502A5 (https=
JPWO2024009502A1 (https=
Inventor
弘介 篠原
智志 西川
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/124—Geodesic lenses or integrated gratings
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Couplings Of Light Guides (AREA)
JP2022560307A 2022-07-08 2022-07-08 半導体光利得素子及び光半導体装置 Active JP7199617B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/027114 WO2024009502A1 (ja) 2022-07-08 2022-07-08 半導体光利得素子及び光半導体装置

Publications (3)

Publication Number Publication Date
JP7199617B1 true JP7199617B1 (ja) 2023-01-05
JPWO2024009502A1 JPWO2024009502A1 (https=) 2024-01-11
JPWO2024009502A5 JPWO2024009502A5 (https=) 2024-06-11

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JP2022560307A Active JP7199617B1 (ja) 2022-07-08 2022-07-08 半導体光利得素子及び光半導体装置

Country Status (4)

Country Link
US (1) US20250372954A1 (https=)
JP (1) JP7199617B1 (https=)
CN (1) CN119452282A (https=)
WO (1) WO2024009502A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358403A (ja) * 2000-06-12 2001-12-26 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ
US20140003458A1 (en) * 2012-06-28 2014-01-02 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
US20150260913A1 (en) * 2012-08-17 2015-09-17 Oracle International Corporation Grating coupler for inter-chip optical coupling
US20180081118A1 (en) * 2014-07-14 2018-03-22 Biond Photonics Inc. Photonic integration by flip-chip bonding and spot-size conversion
US20180180807A1 (en) * 2016-12-22 2018-06-28 Alcatel-Lucent Usa Inc. Optical Grating Coupler With Back-Side Reflector
JP2019500753A (ja) * 2015-12-17 2019-01-10 フィニサー コーポレイション 表面結合システム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358403A (ja) * 2000-06-12 2001-12-26 Nippon Telegr & Teleph Corp <Ntt> 面発光レーザ
US20140003458A1 (en) * 2012-06-28 2014-01-02 Yale University Lateral electrochemical etching of iii-nitride materials for microfabrication
US20150260913A1 (en) * 2012-08-17 2015-09-17 Oracle International Corporation Grating coupler for inter-chip optical coupling
US20180081118A1 (en) * 2014-07-14 2018-03-22 Biond Photonics Inc. Photonic integration by flip-chip bonding and spot-size conversion
JP2019500753A (ja) * 2015-12-17 2019-01-10 フィニサー コーポレイション 表面結合システム
US20180180807A1 (en) * 2016-12-22 2018-06-28 Alcatel-Lucent Usa Inc. Optical Grating Coupler With Back-Side Reflector

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US20250372954A1 (en) 2025-12-04
WO2024009502A1 (ja) 2024-01-11
JPWO2024009502A1 (https=) 2024-01-11
CN119452282A (zh) 2025-02-14

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