JP7192775B2 - ポジ型感放射線性樹脂組成物 - Google Patents

ポジ型感放射線性樹脂組成物 Download PDF

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Publication number
JP7192775B2
JP7192775B2 JP2019544560A JP2019544560A JP7192775B2 JP 7192775 B2 JP7192775 B2 JP 7192775B2 JP 2019544560 A JP2019544560 A JP 2019544560A JP 2019544560 A JP2019544560 A JP 2019544560A JP 7192775 B2 JP7192775 B2 JP 7192775B2
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JP
Japan
Prior art keywords
resin composition
sensitive resin
radiation
positive radiation
film
Prior art date
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JP2019544560A
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English (en)
Japanese (ja)
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JPWO2019065262A1 (ja
Inventor
隆覚 櫻井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zeon Corp
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Zeon Corp
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Publication date
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Publication of JPWO2019065262A1 publication Critical patent/JPWO2019065262A1/ja
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Publication of JP7192775B2 publication Critical patent/JP7192775B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Measurement Of Radiation (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
JP2019544560A 2017-09-29 2018-09-13 ポジ型感放射線性樹脂組成物 Active JP7192775B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017190288 2017-09-29
JP2017190288 2017-09-29
PCT/JP2018/033932 WO2019065262A1 (ja) 2017-09-29 2018-09-13 ポジ型感放射線性樹脂組成物

Publications (2)

Publication Number Publication Date
JPWO2019065262A1 JPWO2019065262A1 (ja) 2020-09-10
JP7192775B2 true JP7192775B2 (ja) 2022-12-20

Family

ID=65901804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019544560A Active JP7192775B2 (ja) 2017-09-29 2018-09-13 ポジ型感放射線性樹脂組成物

Country Status (5)

Country Link
JP (1) JP7192775B2 (zh)
KR (1) KR102669089B1 (zh)
CN (1) CN110998442A (zh)
TW (1) TWI776957B (zh)
WO (1) WO2019065262A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230137360A1 (en) * 2020-03-30 2023-05-04 Nissan Chemical Corporation Composition for forming resist underlayer film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008309885A (ja) 2007-06-12 2008-12-25 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス
JP2013167781A (ja) 2012-02-16 2013-08-29 Fujifilm Corp 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機ｅｌ表示装置および液晶表示装置
JP2017031378A (ja) 2015-08-05 2017-02-09 信越化学工業株式会社 高分子化合物、ポジ型レジスト組成物、積層体、及びレジストパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100863119B1 (ko) * 2001-06-29 2008-10-14 제이에스알 가부시끼가이샤 산발생제, 술폰산, 술폰산 유도체 및 감방사선성 수지조성물
JP2009251538A (ja) * 2008-04-11 2009-10-29 Nippon Zeon Co Ltd 感放射線樹脂組成物
TWI437025B (zh) * 2009-08-14 2014-05-11 Asahi Kasei E Materials Corp An alkali-soluble polymer, a photosensitive resin composition comprising the same, and a use thereof
WO2014030441A1 (ja) 2012-08-23 2014-02-27 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機ｅｌ表示装置および液晶表示装置
JP6140508B2 (ja) * 2013-02-08 2017-05-31 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP2016042127A (ja) 2014-08-15 2016-03-31 Jsr株式会社 感放射線性樹脂組成物、表示素子の層間絶縁膜、その形成方法及び表示素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008309885A (ja) 2007-06-12 2008-12-25 Hitachi Chem Co Ltd ポジ型感光性樹脂組成物、レジストパターンの製造方法及び電子デバイス
JP2013167781A (ja) 2012-02-16 2013-08-29 Fujifilm Corp 感光性樹脂組成物、硬化膜の製造方法、硬化膜、有機ｅｌ表示装置および液晶表示装置
JP2017031378A (ja) 2015-08-05 2017-02-09 信越化学工業株式会社 高分子化合物、ポジ型レジスト組成物、積層体、及びレジストパターン形成方法

Also Published As

Publication number Publication date
CN110998442A (zh) 2020-04-10
KR102669089B1 (ko) 2024-05-23
JPWO2019065262A1 (ja) 2020-09-10
TWI776957B (zh) 2022-09-11
TW201915043A (zh) 2019-04-16
KR20200060366A (ko) 2020-05-29
WO2019065262A1 (ja) 2019-04-04

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