JP7190988B2 - エッチング方法及び基板処理装置 - Google Patents

エッチング方法及び基板処理装置 Download PDF

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JP7190988B2
JP7190988B2 JP2019151424A JP2019151424A JP7190988B2 JP 7190988 B2 JP7190988 B2 JP 7190988B2 JP 2019151424 A JP2019151424 A JP 2019151424A JP 2019151424 A JP2019151424 A JP 2019151424A JP 7190988 B2 JP7190988 B2 JP 7190988B2
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Japan
Prior art keywords
gas
boron
film
etching method
silicon
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JP2019151424A
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Japanese (ja)
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JP2021034483A5 (https=
JP2021034483A (ja
Inventor
高寛 大堀
太樹 三浦
正宏 小笠原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2019151424A priority Critical patent/JP7190988B2/ja
Priority to KR1020200103963A priority patent/KR102840368B1/ko
Priority to US16/997,199 priority patent/US11404279B2/en
Priority to CN202010841594.4A priority patent/CN112420508B/zh
Publication of JP2021034483A publication Critical patent/JP2021034483A/ja
Publication of JP2021034483A5 publication Critical patent/JP2021034483A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/269—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only pre- or post-treatments, e.g. anti-corrosion processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2019151424A 2019-08-21 2019-08-21 エッチング方法及び基板処理装置 Active JP7190988B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019151424A JP7190988B2 (ja) 2019-08-21 2019-08-21 エッチング方法及び基板処理装置
KR1020200103963A KR102840368B1 (ko) 2019-08-21 2020-08-19 에칭 방법 및 기판 처리 장치
US16/997,199 US11404279B2 (en) 2019-08-21 2020-08-19 Etching method and substrate processing apparatus
CN202010841594.4A CN112420508B (zh) 2019-08-21 2020-08-20 蚀刻方法及基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019151424A JP7190988B2 (ja) 2019-08-21 2019-08-21 エッチング方法及び基板処理装置

Publications (3)

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JP2021034483A JP2021034483A (ja) 2021-03-01
JP2021034483A5 JP2021034483A5 (https=) 2022-06-01
JP7190988B2 true JP7190988B2 (ja) 2022-12-16

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US (1) US11404279B2 (https=)
JP (1) JP7190988B2 (https=)
KR (1) KR102840368B1 (https=)
CN (1) CN112420508B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12334354B2 (en) * 2022-02-01 2025-06-17 Applied Materials, Inc. Sidewall passivation for plasma etching
CN117546276A (zh) * 2022-04-18 2024-02-09 株式会社日立高新技术 等离子体处理方法
WO2025182805A1 (ja) * 2024-03-01 2025-09-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020072016A1 (en) 2000-12-13 2002-06-13 Applied Materials, Inc. Substrate cleaning apparatus and method
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
JP2014229751A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
US20160005602A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process
JP2018160689A (ja) 2016-03-28 2018-10-11 株式会社日立ハイテクノロジーズ プラズマ処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置
US6905800B1 (en) * 2000-11-21 2005-06-14 Stephen Yuen Etching a substrate in a process zone
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
JP2004266249A (ja) * 2003-02-10 2004-09-24 Nec Electronics Corp 半導体装置の製造方法
WO2013055586A1 (en) * 2011-10-13 2013-04-18 Applied Materials, Inc. Method for etching euv reflective multi-material layers utilized to form a photomask
US9287124B2 (en) * 2013-08-30 2016-03-15 Applied Materials, Inc. Method of etching a boron doped carbon hardmask
US9997373B2 (en) * 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6689159B2 (ja) 2016-08-22 2020-04-28 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020072016A1 (en) 2000-12-13 2002-06-13 Applied Materials, Inc. Substrate cleaning apparatus and method
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
JP2014229751A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
US20160005602A1 (en) 2014-07-03 2016-01-07 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process
JP2018160689A (ja) 2016-03-28 2018-10-11 株式会社日立ハイテクノロジーズ プラズマ処理方法

Also Published As

Publication number Publication date
US20210057229A1 (en) 2021-02-25
KR102840368B1 (ko) 2025-07-29
US11404279B2 (en) 2022-08-02
CN112420508A (zh) 2021-02-26
KR20210023738A (ko) 2021-03-04
JP2021034483A (ja) 2021-03-01
CN112420508B (zh) 2025-06-27

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