JP2021034483A5 - - Google Patents

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Publication number
JP2021034483A5
JP2021034483A5 JP2019151424A JP2019151424A JP2021034483A5 JP 2021034483 A5 JP2021034483 A5 JP 2021034483A5 JP 2019151424 A JP2019151424 A JP 2019151424A JP 2019151424 A JP2019151424 A JP 2019151424A JP 2021034483 A5 JP2021034483 A5 JP 2021034483A5
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JP
Japan
Prior art keywords
gas
boron
etching method
film
silicon
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JP2019151424A
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English (en)
Japanese (ja)
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JP7190988B2 (ja
JP2021034483A (ja
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Priority to JP2019151424A priority Critical patent/JP7190988B2/ja
Priority claimed from JP2019151424A external-priority patent/JP7190988B2/ja
Priority to KR1020200103963A priority patent/KR102840368B1/ko
Priority to US16/997,199 priority patent/US11404279B2/en
Priority to CN202010841594.4A priority patent/CN112420508B/zh
Publication of JP2021034483A publication Critical patent/JP2021034483A/ja
Publication of JP2021034483A5 publication Critical patent/JP2021034483A5/ja
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Publication of JP7190988B2 publication Critical patent/JP7190988B2/ja
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JP2019151424A 2019-08-21 2019-08-21 エッチング方法及び基板処理装置 Active JP7190988B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019151424A JP7190988B2 (ja) 2019-08-21 2019-08-21 エッチング方法及び基板処理装置
KR1020200103963A KR102840368B1 (ko) 2019-08-21 2020-08-19 에칭 방법 및 기판 처리 장치
US16/997,199 US11404279B2 (en) 2019-08-21 2020-08-19 Etching method and substrate processing apparatus
CN202010841594.4A CN112420508B (zh) 2019-08-21 2020-08-20 蚀刻方法及基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019151424A JP7190988B2 (ja) 2019-08-21 2019-08-21 エッチング方法及び基板処理装置

Publications (3)

Publication Number Publication Date
JP2021034483A JP2021034483A (ja) 2021-03-01
JP2021034483A5 true JP2021034483A5 (https=) 2022-06-01
JP7190988B2 JP7190988B2 (ja) 2022-12-16

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JP2019151424A Active JP7190988B2 (ja) 2019-08-21 2019-08-21 エッチング方法及び基板処理装置

Country Status (4)

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US (1) US11404279B2 (https=)
JP (1) JP7190988B2 (https=)
KR (1) KR102840368B1 (https=)
CN (1) CN112420508B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12334354B2 (en) * 2022-02-01 2025-06-17 Applied Materials, Inc. Sidewall passivation for plasma etching
CN117546276A (zh) * 2022-04-18 2024-02-09 株式会社日立高新技术 等离子体处理方法
WO2025182805A1 (ja) * 2024-03-01 2025-09-04 東京エレクトロン株式会社 エッチング方法及びプラズマ処理システム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677177A (ja) * 1992-06-22 1994-03-18 Matsushita Electric Ind Co Ltd ドライエッチング法及びドライエッチング装置
US6905800B1 (en) * 2000-11-21 2005-06-14 Stephen Yuen Etching a substrate in a process zone
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
JP2004266249A (ja) * 2003-02-10 2004-09-24 Nec Electronics Corp 半導体装置の製造方法
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
WO2013055586A1 (en) * 2011-10-13 2013-04-18 Applied Materials, Inc. Method for etching euv reflective multi-material layers utilized to form a photomask
JP2014229751A (ja) 2013-05-22 2014-12-08 株式会社日立ハイテクノロジーズ プラズマ処理装置および処理方法
US9287124B2 (en) * 2013-08-30 2016-03-15 Applied Materials, Inc. Method of etching a boron doped carbon hardmask
US9390923B2 (en) 2014-07-03 2016-07-12 Applied Materials, Inc. Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process
US9997373B2 (en) * 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP6458156B2 (ja) 2016-03-28 2019-01-23 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6689159B2 (ja) 2016-08-22 2020-04-28 東京エレクトロン株式会社 エッチング方法およびｄｒａｍキャパシタの製造方法

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