JP2012044157A5 - - Google Patents
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- Publication number
- JP2012044157A5 JP2012044157A5 JP2011157815A JP2011157815A JP2012044157A5 JP 2012044157 A5 JP2012044157 A5 JP 2012044157A5 JP 2011157815 A JP2011157815 A JP 2011157815A JP 2011157815 A JP2011157815 A JP 2011157815A JP 2012044157 A5 JP2012044157 A5 JP 2012044157A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- substrate
- semiconductor layer
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000013078 crystal Substances 0.000 claims 21
- 238000004519 manufacturing process Methods 0.000 claims 9
- 239000007789 gas Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 238000005530 etching Methods 0.000 claims 6
- 238000001312 dry etching Methods 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 229910052731 fluorine Inorganic materials 0.000 claims 2
- 239000011737 fluorine Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011157815A JP5925440B2 (ja) | 2010-07-23 | 2011-07-19 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010165811 | 2010-07-23 | ||
| JP2010165811 | 2010-07-23 | ||
| JP2011157815A JP5925440B2 (ja) | 2010-07-23 | 2011-07-19 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012044157A JP2012044157A (ja) | 2012-03-01 |
| JP2012044157A5 true JP2012044157A5 (https=) | 2014-08-21 |
| JP5925440B2 JP5925440B2 (ja) | 2016-05-25 |
Family
ID=45493980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011157815A Expired - Fee Related JP5925440B2 (ja) | 2010-07-23 | 2011-07-19 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20120021588A1 (https=) |
| JP (1) | JP5925440B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576387B (zh) * | 2013-10-14 | 2017-07-25 | 上海和辉光电有限公司 | 低温多晶硅薄膜晶体管制造方法 |
| JP6117134B2 (ja) * | 2014-03-13 | 2017-04-19 | 信越化学工業株式会社 | 複合基板の製造方法 |
| TWI817756B (zh) | 2015-09-22 | 2023-10-01 | 美商應用材料股份有限公司 | 清洗方法 |
| CN107742644B (zh) * | 2017-10-30 | 2024-05-28 | 中山大学 | 一种高性能常关型的GaN场效应晶体管及其制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08153699A (ja) * | 1994-09-16 | 1996-06-11 | Semiconductor Energy Lab Co Ltd | 薄膜半導体装置の作製方法 |
| JP2004172312A (ja) * | 2002-11-19 | 2004-06-17 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP5548356B2 (ja) * | 2007-11-05 | 2014-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5663150B2 (ja) * | 2008-07-22 | 2015-02-04 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法 |
| SG160302A1 (en) * | 2008-09-29 | 2010-04-29 | Semiconductor Energy Lab | Method for manufacturing semiconductor substrate |
| US8138093B2 (en) * | 2009-08-12 | 2012-03-20 | International Business Machines Corporation | Method for forming trenches having different widths and the same depth |
-
2011
- 2011-07-18 US US13/184,591 patent/US20120021588A1/en not_active Abandoned
- 2011-07-19 JP JP2011157815A patent/JP5925440B2/ja not_active Expired - Fee Related
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