JP7182339B2 - 共振器構造、共振器構造形成方法および共振器 - Google Patents
共振器構造、共振器構造形成方法および共振器 Download PDFInfo
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Description
1)ジョセフソン接合は、非線形の無損失集中インダクタである。ジョセフソン接合は、量子ビットLC共振器の誘導部を提供する。無損失という用語が示唆するように、ジョセフソン接合は、損失の観点からは問題がない。また、ジョセフソン接合における(誘導)エネルギーは局所的に蓄積され、量子ビット102における接合は外部回路(量子ビット面202または読み出し面302あるいはその両方の面上の回路の他の部分)とは、ほとんど誘導的作用をしない。ジョセフソン接合またはジョセフソン接合の直列アレイは、螺旋コイル332の代わりとして使用することもできる。
2)仮想的にのみ励起され、光子が存在しないLC共振器。量子ビット間のバス共振器104がLC共振器のこのカテゴリに入る。仮想励起によって、バス共振器104は、その共振器104の共振周波数またはその高調波とは異なる周波数の光子の伝達を可能にする/促進する。バス共振器のモード(すなわち、共振周波数およびその高調波)が励起されないため、これらのバス共振器(およびその誘導部)により生じる損失は問題ではない。また、実際には、これらのバス共振器は極めて高いクオリティ・ファクタ(Qファクタ)、すなわち極めて低損失で作製される。
3)モードが(その共振周波数で、または場合によっては高調波でも)直接励起されるLC共振器に、(ある程度)光子が存在する。本明細書に記載の例示の量子回路では、読み出し共振器106がこのカテゴリに入る。読み出し共振器106は、外部(オフ・チップ)回路(常温電子回路まで)にも結合/接続する。本実験者らは読み出し共振器106によって生じる損失に関心を持ち、損失はその誘導部でより大きく、本発明の実施形態は、読み出し共振器106の誘導部を本明細書に記載の(影響を受けやすい)量子ビットから離す技術および構造を提供する。
Claims (17)
- 共振器構造であって、
第1の表面上の誘導素子と、
第1のキャパシタ・パッドと第2のキャパシタ・パッドとを含む容量素子であって、前記第1のキャパシタ・パッドが前記第1の表面上にあり、前記第2のキャパシタ・パッドが第2の表面上にある、前記容量素子と、
前記第1のキャパシタ・パッドが前記第2のキャパシタ・パッドと対向するように、前記第1の表面と前記第2の表面との間に結合される相互接続構造と
を含む、共振器構造。 - 前記容量素子は前記相互接続構造を含む、請求項1に記載の共振器構造。
- 前記誘導素子は、螺旋コイルと、螺旋様コイルと、蛇行ワイヤと、運動インダクタと、
ジョセフソン接合と、ジョセフソン接合の直列アレイとからなるグループから選択される、請求項1または2に記載の共振器構造。 - 前記誘導素子は接地に分路される、請求項1、2または3に記載の共振器構造。
- 前記容量素子は、平板キャパシタと櫛形キャパシタとからなるグループから選択される、請求項1ないし4のいずれか1項に記載の共振器構造。
- 前記相互接続構造がはんだバンプまたはスルー・シリコン・ビアである、請求項1ないし5のいずれか1項に記載の共振器構造。
- 前記誘導素子または前記容量素子に少なくとも1つの信号伝達線路が結合された、請求項1ないし6のいずれか1項に記載の共振器構造。
- 前記誘導素子または前記容量素子に少なくとも1つの超伝導量子ビットが結合された、請求項1ないし7のいずれか1項に記載の共振器構造。
- 前記誘導素子と、前記容量素子と、前記相互接続構造とが超伝導金属を含む、請求項1ないし8のいずれか1項に記載の共振器構造。
- 共振器構造を形成する方法であって、
第1の表面に誘導素子を配置することと、
第1のキャパシタ・パッドと第2のキャパシタ・パッドとを含む容量素子を配置することであって、前記第1のキャパシタ・パッドが前記第1の表面上にあり、前記第2のキャパシタ・パッドが第2の表面上にある、前記容量素子を配置することと、
前記第1のキャパシタ・パッドが前記第2のキャパシタ・パッドと対向するように、前記第1の表面と前記第2の表面との間に相互接続構造を結合することと
を含む、方法。 - 前記誘導素子は、螺旋コイルと、螺旋様コイルと、蛇行ワイヤと、運動インダクタと、
ジョセフソン接合と、ジョセフソン接合の直列アレイとからなるグループから選択される、請求項10に記載の方法。 - 前記誘導素子は接地に分路される、請求項10または11に記載の方法。
- 前記容量素子は、平板キャパシタと櫛形キャパシタとからなるグループから選択される、請求項10ないし12のいずれか1項に記載の方法。
- 共振器構造であって、
第1の表面上の第1の部分と第2の表面上の第2の部分とを含む容量素子であって、前記第1の部分と前記第2の部分とが等電位を有する、前記容量素子と、
前記第1の表面と前記第2の表面とのうちの一方の表面に配置され、前記第1の表面と前記第2の表面とのうちの他方の表面には存在しない誘導素子と
を含む、共振器構造。 - 相互接続部が、前記等電位を有するように前記第1の部分と前記第2の部分とを接続する、請求項14に記載の共振器構造。
- 共振器構造を形成する方法であって、
第1の表面上の第1の部分と、第2の表面上の第2の部分とを含み、前記第1の部分と前記第2の部分とが等電位を有する容量素子を設けることと、
前記第1の表面と前記第2の表面とのうちの一方の表面に配置され、前記第1の表面と前記第2の表面とのうちの他方の表面には存在しない誘導素子を形成することと
を含む、方法。 - 超伝導相互接続部によって接続された第1の超伝導材料と第2の超伝導材料とを含み、
前記第1の超伝導材料と前記第2の超伝導材料とが異なる表面にある、キャパシタと、
前記異なる表面のうちの一方の表面に配置されたインダクタと
を含む、共振器。
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US15/827,729 | 2017-11-30 | ||
US15/827,729 US10263170B1 (en) | 2017-11-30 | 2017-11-30 | Bumped resonator structure |
PCT/EP2018/076101 WO2019105630A1 (en) | 2017-11-30 | 2018-09-26 | Bumped resonator structure |
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