JP7181845B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000012535 impurity Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 69
- 238000009792 diffusion process Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000005224 laser annealing Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000004913 activation Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- B23K2101/00—Articles made by soldering, welding or cutting
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- B23K2103/00—Materials to be soldered, welded or cut
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- Insulated Gate Type Field-Effect Transistor (AREA)
Description
ここで、rcは、外歯車211の内径(定円の半径)であり、rmは、内歯車213の半径(動円の半径)である。rdは、上方から見た、外歯車211の中心と、ウェーハ100の中心と、の間の距離(描画点の半径)である。また、θは、内歯車213の回転角である。例えば、rc=60mm、rm=9.4mm、rd=49mm、0≦θ≦2nπとした時、レーザ光LLは、8インチウェーハの裏面に沿って、図7(a)に示す軌跡を描くように走査される。
Claims (5)
- 半導体ウェーハの表面側に金属層を形成した後、前記半導体ウェーハの裏面側に不純物をイオン注入する工程と、
前記半導体ウェーハの前記裏面にレーザ光を照射し、前記不純物を活性化させる工程と、
を備え、
前記レーザ光は、前記半導体ウェーハの前記裏面上において、屈曲のない曲線が複数回交差した軌跡を描くように走査され、
前記レーザ光の前記裏面上のスポットサイズは、前記レーザ光の走査方向と交差する方向において、前記軌跡を構成する曲線のうちの相互に隣接する部分の間隔よりも広い半導体装置の製造方法。 - 前記レーザ光は、連続したパルス電流により駆動されるレーザ装置から放射され、
前記半導体ウェーハの前記裏面上における第1領域に、前記レーザ光を照射している間、前記パルス電流は、第1周期を有し、
前記軌跡の密度が前記第1領域よりも高い前記裏面上の第2領域に、前記レーザ光を照射している間、前記パルス電流は、前記第1周期よりも長い第2周期を有する請求項1記載の製造方法。 - 前記レーザ光は、前記半導体ウェーハの裏面の中央で複数回交差する軌跡を描くように走査され、
前記第2領域は、前記裏面の前記中央に位置し、
前記第1領域は、前記第2領域を囲む請求項2記載の製造方法。 - 前記レーザ光は、前記半導体ウェーハの前記裏面上にトロコイドを描くように走査される請求項1~3のいずれか1つに記載の製造方法。
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JP2019162283A JP7181845B2 (ja) | 2019-09-05 | 2019-09-05 | 半導体装置の製造方法 |
US16/803,653 US11189494B2 (en) | 2019-09-05 | 2020-02-27 | Method of manufacturing semiconductor device |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123300A (ja) | 2005-10-25 | 2007-05-17 | Toyota Motor Corp | 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法 |
JP2013074247A (ja) | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | レーザアニール装置、及び、レーザアニール方法 |
WO2014136237A1 (ja) | 2013-03-07 | 2014-09-12 | 三菱電機株式会社 | レーザアニール装置、半導体装置の製造方法 |
JP2016093507A (ja) | 2014-11-12 | 2016-05-26 | ハーグ−シュトライト アーゲー | 測定方法 |
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JP3054310B2 (ja) * | 1994-03-09 | 2000-06-19 | 株式会社半導体エネルギー研究所 | 半導体デバイスのレーザー処理方法 |
JPH1068713A (ja) * | 1996-08-28 | 1998-03-10 | Chikyu Kankyo Sangyo Gijutsu Kenkyu Kiko | 光走査型二次元濃度分布測定装置 |
JPH10175084A (ja) * | 1996-12-17 | 1998-06-30 | Komatsu Ltd | ライン式レーザマーカ装置、その光学装置及びその刻印方法 |
JP2012094698A (ja) | 2010-10-27 | 2012-05-17 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP6000015B2 (ja) | 2012-08-08 | 2016-09-28 | 住友重機械工業株式会社 | 半導体装置の製造方法 |
TWI545627B (zh) | 2012-06-13 | 2016-08-11 | Sumitomo Heavy Industries | 半導體裝置的製造方法及雷射退火裝置 |
CN106463528B (zh) * | 2014-11-17 | 2019-10-11 | 富士电机株式会社 | 碳化硅半导体装置的制造方法 |
WO2017047276A1 (ja) * | 2015-09-16 | 2017-03-23 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007123300A (ja) | 2005-10-25 | 2007-05-17 | Toyota Motor Corp | 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法 |
JP2013074247A (ja) | 2011-09-29 | 2013-04-22 | Sumitomo Heavy Ind Ltd | レーザアニール装置、及び、レーザアニール方法 |
WO2014136237A1 (ja) | 2013-03-07 | 2014-09-12 | 三菱電機株式会社 | レーザアニール装置、半導体装置の製造方法 |
JP2016093507A (ja) | 2014-11-12 | 2016-05-26 | ハーグ−シュトライト アーゲー | 測定方法 |
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