JP7177628B2 - 基板処理方法、基板処理装置および基板処理システム - Google Patents

基板処理方法、基板処理装置および基板処理システム Download PDF

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Publication number
JP7177628B2
JP7177628B2 JP2018154079A JP2018154079A JP7177628B2 JP 7177628 B2 JP7177628 B2 JP 7177628B2 JP 2018154079 A JP2018154079 A JP 2018154079A JP 2018154079 A JP2018154079 A JP 2018154079A JP 7177628 B2 JP7177628 B2 JP 7177628B2
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Japan
Prior art keywords
nozzle
substrate
timing
ejection
liquid
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JP2018154079A
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English (en)
Japanese (ja)
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JP2020031083A (ja
Inventor
鮎美 樋口
英司 猶原
有史 沖田
翔太 岩畑
央章 角間
達哉 増井
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2018154079A priority Critical patent/JP7177628B2/ja
Priority to TW108120997A priority patent/TWI702649B/zh
Priority to KR1020217004619A priority patent/KR102509854B1/ko
Priority to CN201980054879.9A priority patent/CN112640054A/zh
Priority to PCT/JP2019/026589 priority patent/WO2020039765A1/fr
Publication of JP2020031083A publication Critical patent/JP2020031083A/ja
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Publication of JP7177628B2 publication Critical patent/JP7177628B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018154079A 2018-08-20 2018-08-20 基板処理方法、基板処理装置および基板処理システム Active JP7177628B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018154079A JP7177628B2 (ja) 2018-08-20 2018-08-20 基板処理方法、基板処理装置および基板処理システム
TW108120997A TWI702649B (zh) 2018-08-20 2019-06-18 基板處理方法、基板處理裝置以及基板處理系統
KR1020217004619A KR102509854B1 (ko) 2018-08-20 2019-07-04 기판 처리 방법, 기판 처리 장치 및 기판 처리 시스템
CN201980054879.9A CN112640054A (zh) 2018-08-20 2019-07-04 基板处理方法、基板处理装置以及基板处理系统
PCT/JP2019/026589 WO2020039765A1 (fr) 2018-08-20 2019-07-04 Procédé de traitement de substrat, dispositif de traitement de substrat et système de traitement de substrat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018154079A JP7177628B2 (ja) 2018-08-20 2018-08-20 基板処理方法、基板処理装置および基板処理システム

Publications (2)

Publication Number Publication Date
JP2020031083A JP2020031083A (ja) 2020-02-27
JP7177628B2 true JP7177628B2 (ja) 2022-11-24

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JP2018154079A Active JP7177628B2 (ja) 2018-08-20 2018-08-20 基板処理方法、基板処理装置および基板処理システム

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Country Link
JP (1) JP7177628B2 (fr)
KR (1) KR102509854B1 (fr)
CN (1) CN112640054A (fr)
TW (1) TWI702649B (fr)
WO (1) WO2020039765A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3085603B1 (fr) * 2018-09-11 2020-08-14 Soitec Silicon On Insulator Procede pour le traitement d'un susbtrat soi dans un equipement de nettoyage monoplaque
JP2021152762A (ja) * 2020-03-24 2021-09-30 株式会社Ｓｃｒｅｅｎホールディングス 学習済みモデル生成方法、学習済みモデル、異常要因推定装置、基板処理装置、異常要因推定方法、学習方法、学習装置、及び、学習データ作成方法
KR102368201B1 (ko) * 2020-04-08 2022-03-02 이지스로직 주식회사 스핀 코터의 포토레지스트 코팅 품질 검사 시스템
KR102324162B1 (ko) * 2020-04-08 2021-11-10 이지스로직 주식회사 포토레지스트 코팅 품질 검사가 가능한 스핀 코터
KR102327761B1 (ko) * 2020-04-08 2021-11-19 주식회사 이지스로직 Ｄｖｓ와 딥러닝을 이용한 스핀 코터의 포토레지스트 코팅 품질 검사 시스템
US11699595B2 (en) * 2021-02-25 2023-07-11 Applied Materials, Inc. Imaging for monitoring thickness in a substrate cleaning system
KR102585478B1 (ko) * 2021-10-14 2023-10-10 주식회사 램스 딥러닝을 이용한 스핀 코터의 포토레지스트 도포 상태 검사 시스템
JP2023127856A (ja) * 2022-03-02 2023-09-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、及び基板処理装置
JP2024047494A (ja) * 2022-09-26 2024-04-05 株式会社Ｓｃｒｅｅｎホールディングス 学習装置、情報処理装置、基板処理装置、基板処理システム、学習方法および処理条件決定方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003273003A (ja) 2002-03-15 2003-09-26 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2016072344A (ja) 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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JP3481416B2 (ja) * 1997-04-07 2003-12-22 大日本スクリーン製造株式会社 基板処理装置及び方法
JPH11330041A (ja) * 1998-05-07 1999-11-30 Dainippon Screen Mfg Co Ltd エッチング液による基板処理装置
JP4601452B2 (ja) * 2005-02-22 2010-12-22 大日本スクリーン製造株式会社 基板処理装置
JP2010151925A (ja) * 2008-12-24 2010-07-08 Hitachi High-Technologies Corp 基板処理装置、フラットパネルディスプレイの製造装置およびフラットパネルディスプレイ
JP2009218622A (ja) * 2009-06-29 2009-09-24 Canon Anelva Corp 基板処理装置及び基板処理装置における基板位置ずれ補正方法
JP6251086B2 (ja) * 2014-03-12 2017-12-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6278759B2 (ja) 2014-03-11 2018-02-14 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016122681A (ja) * 2014-12-24 2016-07-07 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6635869B2 (ja) * 2015-06-16 2020-01-29 東京エレクトロン株式会社 処理装置、処理方法および記憶媒体
JP6541491B2 (ja) 2015-07-29 2019-07-10 株式会社Ｓｃｒｅｅｎホールディングス 流下判定方法、流下判定装置および吐出装置

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2003273003A (ja) 2002-03-15 2003-09-26 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2016072344A (ja) 2014-09-29 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Also Published As

Publication number Publication date
TWI702649B (zh) 2020-08-21
TW202010003A (zh) 2020-03-01
KR102509854B1 (ko) 2023-03-14
KR20210031952A (ko) 2021-03-23
JP2020031083A (ja) 2020-02-27
WO2020039765A1 (fr) 2020-02-27
CN112640054A (zh) 2021-04-09

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