JP7170036B2 - 超伝導配線層およびインターコネクトを有する機器の製作 - Google Patents

超伝導配線層およびインターコネクトを有する機器の製作 Download PDF

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JP7170036B2
JP7170036B2 JP2020516898A JP2020516898A JP7170036B2 JP 7170036 B2 JP7170036 B2 JP 7170036B2 JP 2020516898 A JP2020516898 A JP 2020516898A JP 2020516898 A JP2020516898 A JP 2020516898A JP 7170036 B2 JP7170036 B2 JP 7170036B2
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niobium
superconducting
temperature
layer
traces
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JP2020535643A (ja
JP2020535643A5 (https=
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ピー． ラウズ，リチャード
ビー． タッカーマン，デイビッド
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Microsoft Technology Licensing LLC
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Microsoft Technology Licensing LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0688—Etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0156—Manufacture or treatment of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0856—Manufacture or treatment of devices comprising metal borides, e.g. MgB2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/805—Constructional details for Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4484—Superconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/66—Conductive materials thereof
    • H10W70/668—Superconducting materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/50—Multilayers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10378—Interposers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
    • H05K3/4605—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated made from inorganic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2020516898A 2017-09-26 2018-06-25 超伝導配線層およびインターコネクトを有する機器の製作 Active JP7170036B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/715,521 2017-09-26
US15/715,521 US10651362B2 (en) 2017-09-26 2017-09-26 Method of forming superconducting apparatus including superconducting layers and traces
PCT/US2018/039214 WO2019067039A1 (en) 2017-09-26 2018-06-25 DEVICE MANUFACTURE COMPRISING SUPERCONDUCTING WIRING LAYERS AND INTERCONNECTIONS

Publications (3)

Publication Number Publication Date
JP2020535643A JP2020535643A (ja) 2020-12-03
JP2020535643A5 JP2020535643A5 (https=) 2021-07-26
JP7170036B2 true JP7170036B2 (ja) 2022-11-11

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JP2020516898A Active JP7170036B2 (ja) 2017-09-26 2018-06-25 超伝導配線層およびインターコネクトを有する機器の製作

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Country Link
US (2) US10651362B2 (https=)
EP (1) EP3688796B1 (https=)
JP (1) JP7170036B2 (https=)
AU (1) AU2018341994B2 (https=)
WO (1) WO2019067039A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10651362B2 (en) * 2017-09-26 2020-05-12 Microsoft Technology Licensing, Llc Method of forming superconducting apparatus including superconducting layers and traces
US10615223B2 (en) 2018-06-12 2020-04-07 International Business Machines Corporation Vertical silicon-on-metal superconducting quantum interference device
US20200083154A1 (en) 2018-09-10 2020-03-12 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Component Carrier With a Photoimageable Dielectric Layer and a Structured Conductive Layer Being Used as a Mask for Selectively Exposing the Photoimageable Dielectric Layer With Electromagnetic Radiation
US11417819B2 (en) * 2020-04-27 2022-08-16 Microsoft Technology Licensing, Llc Forming a bumpless superconductor device by bonding two substrates via a dielectric layer
FR3114443B1 (fr) * 2020-09-21 2022-12-23 Commissariat Energie Atomique Structure d’intégration à routage bifonctionnel et assemblage comprenant une telle structure
US11742326B2 (en) * 2020-12-28 2023-08-29 Microsoft Technology Licensing, Llc Stacked superconducting integrated circuits with three dimensional resonant clock networks
FR3129772B1 (fr) * 2021-11-30 2024-10-04 Commissariat Energie Atomique Structure d’intégration destinée à connecter une pluralité de dispositifs semi-conducteurs, procédés, assemblage et système associés
FI20245823A1 (en) * 2024-06-27 2025-12-28 Teknologian Tutkimuskeskus Vtt Oy Superconducting longitudinal connection and method for producing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208630A (ja) 1999-01-05 2000-07-28 Trw Inc 集積回路の製造方法
JP2004128437A (ja) 2002-08-01 2004-04-22 National Institute Of Advanced Industrial & Technology 超伝導集積回路及びその作製方法
WO2014069662A1 (ja) 2012-11-05 2014-05-08 大日本印刷株式会社 配線構造体

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CA1329952C (en) * 1987-04-27 1994-05-31 Yoshihiko Imanaka Multi-layer superconducting circuit substrate and process for manufacturing same
JP2875093B2 (ja) * 1992-03-17 1999-03-24 三菱電機株式会社 半導体装置
US5476719A (en) 1994-08-17 1995-12-19 Trw Inc. Superconducting multi-layer microstrip structure for multi-chip modules and microwave circuits
JPH09260378A (ja) * 1996-03-22 1997-10-03 Canon Inc 埋め込み配線形成方法
JP3457851B2 (ja) * 1997-06-30 2003-10-20 京セラ株式会社 電子回路部品
EP3098865B1 (en) * 2009-02-27 2018-10-03 D-Wave Systems Inc. Method for fabricating a superconducting integrated circuit
US8735326B2 (en) * 2010-05-19 2014-05-27 Northrop Grumman Systems Corporation Methods of forming superconductor circuits
WO2013180780A2 (en) * 2012-03-08 2013-12-05 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
US9741918B2 (en) * 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
EP3195377B1 (en) * 2014-08-13 2021-12-15 D-Wave Systems Inc. Method of forming superconducting wiring layers with low magnetic noise
US9653398B1 (en) * 2015-12-08 2017-05-16 Northrop Grumman Systems Corporation Non-oxide based dielectrics for superconductor devices
US10003005B2 (en) * 2016-08-23 2018-06-19 Northrop Grumman Systems Corporation Superconductor device interconnect
US10276504B2 (en) * 2017-05-17 2019-04-30 Northrop Grumman Systems Corporation Preclean and deposition methodology for superconductor interconnects
US10651362B2 (en) * 2017-09-26 2020-05-12 Microsoft Technology Licensing, Llc Method of forming superconducting apparatus including superconducting layers and traces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000208630A (ja) 1999-01-05 2000-07-28 Trw Inc 集積回路の製造方法
JP2004128437A (ja) 2002-08-01 2004-04-22 National Institute Of Advanced Industrial & Technology 超伝導集積回路及びその作製方法
WO2014069662A1 (ja) 2012-11-05 2014-05-08 大日本印刷株式会社 配線構造体

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Publication number Publication date
AU2018341994B2 (en) 2022-09-29
JP2020535643A (ja) 2020-12-03
EP3688796A1 (en) 2020-08-05
US20190097118A1 (en) 2019-03-28
US10651362B2 (en) 2020-05-12
US20200243743A1 (en) 2020-07-30
US11114602B2 (en) 2021-09-07
WO2019067039A1 (en) 2019-04-04
AU2018341994A1 (en) 2020-02-20
EP3688796B1 (en) 2021-12-22

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