JP7169350B2 - インプリントリソグラフィプロセスにおける光学層の構成 - Google Patents
インプリントリソグラフィプロセスにおける光学層の構成 Download PDFInfo
- Publication number
- JP7169350B2 JP7169350B2 JP2020521998A JP2020521998A JP7169350B2 JP 7169350 B2 JP7169350 B2 JP 7169350B2 JP 2020521998 A JP2020521998 A JP 2020521998A JP 2020521998 A JP2020521998 A JP 2020521998A JP 7169350 B2 JP7169350 B2 JP 7169350B2
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- substrate
- nanolayer
- imprint lithography
- lithography method
- optical layer
- Prior art date
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Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022069396A JP2022089961A (ja) | 2017-10-20 | 2022-04-20 | インプリントリソグラフィプロセスにおける光学層の構成 |
| JP2022181728A JP7427065B2 (ja) | 2017-10-20 | 2022-11-14 | インプリントリソグラフィプロセスにおける光学層の構成 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762574826P | 2017-10-20 | 2017-10-20 | |
| US62/574,826 | 2017-10-20 | ||
| PCT/US2018/056644 WO2019079679A1 (en) | 2017-10-20 | 2018-10-19 | CONFIGURING OPTICAL LAYERS IN PRINTING LITHOGRAPHY METHODS |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022069396A Division JP2022089961A (ja) | 2017-10-20 | 2022-04-20 | インプリントリソグラフィプロセスにおける光学層の構成 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021500746A JP2021500746A (ja) | 2021-01-07 |
| JP2021500746A5 JP2021500746A5 (https=) | 2021-11-25 |
| JP7169350B2 true JP7169350B2 (ja) | 2022-11-10 |
Family
ID=66170462
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020521998A Active JP7169350B2 (ja) | 2017-10-20 | 2018-10-19 | インプリントリソグラフィプロセスにおける光学層の構成 |
| JP2022069396A Pending JP2022089961A (ja) | 2017-10-20 | 2022-04-20 | インプリントリソグラフィプロセスにおける光学層の構成 |
| JP2022181728A Active JP7427065B2 (ja) | 2017-10-20 | 2022-11-14 | インプリントリソグラフィプロセスにおける光学層の構成 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022069396A Pending JP2022089961A (ja) | 2017-10-20 | 2022-04-20 | インプリントリソグラフィプロセスにおける光学層の構成 |
| JP2022181728A Active JP7427065B2 (ja) | 2017-10-20 | 2022-11-14 | インプリントリソグラフィプロセスにおける光学層の構成 |
Country Status (8)
| Country | Link |
|---|---|
| US (7) | US10670971B2 (https=) |
| EP (1) | EP3698181A4 (https=) |
| JP (3) | JP7169350B2 (https=) |
| KR (3) | KR102383721B1 (https=) |
| CN (2) | CN115079514B (https=) |
| AU (2) | AU2018351321B9 (https=) |
| IL (1) | IL273853B2 (https=) |
| WO (1) | WO2019079679A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018175874A1 (en) * | 2017-03-23 | 2018-09-27 | The Board Of Trustees Of The Leland Stanford Junior University | Broadband, polarization-independent, omnidirectional, metamaterial-based antireflection coating |
| KR102383721B1 (ko) | 2017-10-20 | 2022-04-08 | 매직 립, 인코포레이티드 | 임프린트 리소그래피 프로세스들에서의 광학 층들의 구성 |
| EP3540499A1 (en) | 2018-03-13 | 2019-09-18 | Thomson Licensing | Image sensor comprising a color splitter with two different refractive indexes |
| EP3540479A1 (en) | 2018-03-13 | 2019-09-18 | Thomson Licensing | Diffraction grating comprising double-materials structures |
| EP3588150A1 (en) | 2018-06-29 | 2020-01-01 | Thomson Licensing | An optical device comprising multi-layer waveguides |
| EP3591700A1 (en) | 2018-07-02 | 2020-01-08 | Thomson Licensing | Image sensor comprising a color splitter with two different refractive indexes, and different height |
| EP3671310A1 (en) | 2018-12-18 | 2020-06-24 | Thomson Licensing | Optical manipulation apparatus for trapping or moving micro or nanoparticles |
| EP3671322A1 (en) | 2018-12-18 | 2020-06-24 | Thomson Licensing | Device for forming an outgoing electromagnetic wave from an incident electromagnetic wave |
| EP3671293A1 (en) | 2018-12-21 | 2020-06-24 | Thomson Licensing | An optical device comprising at least one diffraction grating having a grating pitch above the wavelength |
| CN114514443A (zh) | 2019-07-19 | 2022-05-17 | 奇跃公司 | 制造衍射光栅的方法 |
| WO2021191150A1 (en) * | 2020-03-23 | 2021-09-30 | Interdigital Ce Patent Holdings, Sas | Unpolarized light grating in-coupler |
| CN114980593B (zh) * | 2021-02-18 | 2025-07-11 | 北京小米移动软件有限公司 | 光学膜、壳体、终端和光学膜的制备方法 |
| CN117480420A (zh) * | 2021-04-16 | 2024-01-30 | 奇跃公司 | 组合光学部件中的纳米图案封装功能、方法和工艺 |
| US12442961B1 (en) | 2021-07-23 | 2025-10-14 | Apple Inc. | Methods of forming holographic gratings for optical systems |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007322572A (ja) | 2006-05-31 | 2007-12-13 | Omron Corp | 反射防止光学素子 |
| JP2013024625A (ja) | 2011-07-19 | 2013-02-04 | Seiko Epson Corp | 分光装置、検出装置及び分光装置の製造方法 |
| JP2014056050A (ja) | 2012-09-11 | 2014-03-27 | Ricoh Co Ltd | 光学素子および光拡散素子および画像表示装置 |
| CN104536088A (zh) | 2015-01-24 | 2015-04-22 | 上海理湃光晶技术有限公司 | 齿形镶嵌平面波导光学器件 |
| US20150241619A1 (en) | 2014-02-24 | 2015-08-27 | Google Inc. | Lightguide device with outcoupling structures |
| US20160116739A1 (en) | 2014-09-29 | 2016-04-28 | Magic Leap, Inc. | Architectures and methods for outputting different wavelength light out of waveguides |
| JP2016183252A (ja) | 2015-03-26 | 2016-10-20 | 三菱レイヨン株式会社 | 活性エネルギー線硬化性樹脂組成物及び物品 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI246460B (en) * | 1999-01-14 | 2006-01-01 | Sumitomo Chemical Co | Anti-reflection film |
| EP1416303B8 (en) | 2002-10-30 | 2010-10-13 | Hitachi, Ltd. | Method for manufacturing functional substrates comprising columnar micro-pillars |
| JP2006523383A (ja) * | 2003-03-04 | 2006-10-12 | ピクセリジェント・テクノロジーズ・エルエルシー | フォトリソグラフィ用のナノサイズ半導体粒子の応用 |
| EP1479734B1 (en) | 2003-05-20 | 2009-02-11 | DSM IP Assets B.V. | Nano-structured surface coating process, nano-structured coatings and articles comprising the coating |
| BRPI0516888A (pt) * | 2004-10-29 | 2008-09-23 | Glaverbel | espelho dicróico |
| US20090231714A1 (en) * | 2005-09-19 | 2009-09-17 | Yang Zhao | Transparent anti-reflective article and method of fabricating same |
| JP2011505267A (ja) * | 2007-11-08 | 2011-02-24 | エム. セイガー、ブライアン | 改善された反射防止用被覆 |
| JP4951500B2 (ja) * | 2007-12-27 | 2012-06-13 | ペンタックスリコーイメージング株式会社 | 反射防止膜及びこれを有する光学部品、交換レンズ及び撮像装置 |
| US20100052216A1 (en) * | 2008-08-29 | 2010-03-04 | Yong Hyup Kim | Nano imprint lithography using an elastic roller |
| US20100104852A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of High-Throughput Nano-Imprint Lithography Templates |
| US7957621B2 (en) * | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
| CN102326274A (zh) * | 2009-02-19 | 2012-01-18 | 旭硝子欧洲玻璃公司 | 用于光子器件的透明基材 |
| KR101131485B1 (ko) * | 2010-08-02 | 2012-03-30 | 광주과학기술원 | 무반사를 위한 나노구조의 제조방법 및 무반사 나노구조가 집적된 광소자의 제조방법 |
| JP6212050B2 (ja) * | 2011-12-22 | 2017-10-11 | スリーエム イノベイティブ プロパティズ カンパニー | 高い光透過を備えた導電性物品 |
| CN104040379B (zh) * | 2012-01-10 | 2016-02-10 | 纳卢克斯株式会社 | 光学多层膜 |
| US9164309B2 (en) * | 2012-05-25 | 2015-10-20 | Apple Inc. | Display with broadband antireflection film |
| TWI652501B (zh) * | 2013-09-13 | 2019-03-01 | 美商康寧公司 | 具有多層光學膜的低色偏抗刮物件 |
| EP2878977A1 (en) * | 2013-11-29 | 2015-06-03 | FOM Institute for Atomic and Molecular Physics | Nanopatterned antireflection coating |
| WO2016098329A1 (ja) * | 2014-12-15 | 2016-06-23 | 凸版印刷株式会社 | 表示体及び表示体の製造方法 |
| JP6672585B2 (ja) * | 2014-12-15 | 2020-03-25 | 凸版印刷株式会社 | 表示体 |
| TWM511619U (zh) * | 2015-08-28 | 2015-11-01 | Nano Bit Tech Co Ltd | 光學複合層結構 |
| EP3353583A1 (en) * | 2015-09-23 | 2018-08-01 | Corning Incorporated | Oled light extraction using nanostructured coatings |
| US11231544B2 (en) * | 2015-11-06 | 2022-01-25 | Magic Leap, Inc. | Metasurfaces for redirecting light and methods for fabricating |
| WO2018039273A1 (en) * | 2016-08-22 | 2018-03-01 | Magic Leap, Inc. | Dithering methods and apparatus for wearable display device |
| CN110023234B (zh) * | 2016-12-02 | 2024-01-09 | 分子印记公司 | 在压印光刻工艺中配置光学层 |
| KR102383721B1 (ko) | 2017-10-20 | 2022-04-08 | 매직 립, 인코포레이티드 | 임프린트 리소그래피 프로세스들에서의 광학 층들의 구성 |
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2018
- 2018-10-19 KR KR1020207013899A patent/KR102383721B1/ko active Active
- 2018-10-19 JP JP2020521998A patent/JP7169350B2/ja active Active
- 2018-10-19 CN CN202210838277.6A patent/CN115079514B/zh active Active
- 2018-10-19 CN CN201880067545.0A patent/CN111226143B/zh active Active
- 2018-10-19 KR KR1020257004608A patent/KR20250026388A/ko active Pending
- 2018-10-19 EP EP18869184.4A patent/EP3698181A4/en active Pending
- 2018-10-19 AU AU2018351321A patent/AU2018351321B9/en active Active
- 2018-10-19 US US16/165,027 patent/US10670971B2/en active Active
- 2018-10-19 WO PCT/US2018/056644 patent/WO2019079679A1/en not_active Ceased
- 2018-10-19 KR KR1020227010808A patent/KR102769774B1/ko active Active
- 2018-10-19 IL IL273853A patent/IL273853B2/en unknown
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2020
- 2020-04-27 US US16/859,584 patent/US10969692B2/en active Active
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2021
- 2021-04-05 US US17/222,492 patent/US11281109B2/en active Active
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2022
- 2022-03-03 US US17/685,781 patent/US11550226B2/en active Active
- 2022-04-20 JP JP2022069396A patent/JP2022089961A/ja active Pending
- 2022-11-14 JP JP2022181728A patent/JP7427065B2/ja active Active
- 2022-12-13 US US18/080,490 patent/US12044976B2/en active Active
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2023
- 2023-11-28 AU AU2023274092A patent/AU2023274092B2/en active Active
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2024
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007322572A (ja) | 2006-05-31 | 2007-12-13 | Omron Corp | 反射防止光学素子 |
| JP2013024625A (ja) | 2011-07-19 | 2013-02-04 | Seiko Epson Corp | 分光装置、検出装置及び分光装置の製造方法 |
| JP2014056050A (ja) | 2012-09-11 | 2014-03-27 | Ricoh Co Ltd | 光学素子および光拡散素子および画像表示装置 |
| US20150241619A1 (en) | 2014-02-24 | 2015-08-27 | Google Inc. | Lightguide device with outcoupling structures |
| US20160116739A1 (en) | 2014-09-29 | 2016-04-28 | Magic Leap, Inc. | Architectures and methods for outputting different wavelength light out of waveguides |
| CN104536088A (zh) | 2015-01-24 | 2015-04-22 | 上海理湃光晶技术有限公司 | 齿形镶嵌平面波导光学器件 |
| JP2016183252A (ja) | 2015-03-26 | 2016-10-20 | 三菱レイヨン株式会社 | 活性エネルギー線硬化性樹脂組成物及び物品 |
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