CN115079514B - 在压印光刻工艺中配置光学层 - Google Patents
在压印光刻工艺中配置光学层 Download PDFInfo
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- CN115079514B CN115079514B CN202210838277.6A CN202210838277A CN115079514B CN 115079514 B CN115079514 B CN 115079514B CN 202210838277 A CN202210838277 A CN 202210838277A CN 115079514 B CN115079514 B CN 115079514B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 150
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- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- -1 (2-methyl-2-ethyl-1, 3-dioxolan-4-yl) methyl Chemical group 0.000 description 1
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 1
- VOBUAPTXJKMNCT-UHFFFAOYSA-N 1-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound CCCCCC(OC(=O)C=C)OC(=O)C=C VOBUAPTXJKMNCT-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N acrylic acid methyl ester Natural products COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 238000000149 argon plasma sintering Methods 0.000 description 1
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- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
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- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/118—Anti-reflection coatings having sub-optical wavelength surface structures designed to provide an enhanced transmittance, e.g. moth-eye structures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762574826P | 2017-10-20 | 2017-10-20 | |
| US62/574,826 | 2017-10-20 | ||
| PCT/US2018/056644 WO2019079679A1 (en) | 2017-10-20 | 2018-10-19 | CONFIGURING OPTICAL LAYERS IN PRINTING LITHOGRAPHY METHODS |
| CN201880067545.0A CN111226143B (zh) | 2017-10-20 | 2018-10-19 | 在压印光刻工艺中配置光学层 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880067545.0A Division CN111226143B (zh) | 2017-10-20 | 2018-10-19 | 在压印光刻工艺中配置光学层 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115079514A CN115079514A (zh) | 2022-09-20 |
| CN115079514B true CN115079514B (zh) | 2025-03-07 |
Family
ID=66170462
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210838277.6A Active CN115079514B (zh) | 2017-10-20 | 2018-10-19 | 在压印光刻工艺中配置光学层 |
| CN201880067545.0A Active CN111226143B (zh) | 2017-10-20 | 2018-10-19 | 在压印光刻工艺中配置光学层 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880067545.0A Active CN111226143B (zh) | 2017-10-20 | 2018-10-19 | 在压印光刻工艺中配置光学层 |
Country Status (8)
| Country | Link |
|---|---|
| US (7) | US10670971B2 (https=) |
| EP (1) | EP3698181A4 (https=) |
| JP (3) | JP7169350B2 (https=) |
| KR (3) | KR102383721B1 (https=) |
| CN (2) | CN115079514B (https=) |
| AU (2) | AU2018351321B9 (https=) |
| IL (1) | IL273853B2 (https=) |
| WO (1) | WO2019079679A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018175874A1 (en) * | 2017-03-23 | 2018-09-27 | The Board Of Trustees Of The Leland Stanford Junior University | Broadband, polarization-independent, omnidirectional, metamaterial-based antireflection coating |
| KR102383721B1 (ko) | 2017-10-20 | 2022-04-08 | 매직 립, 인코포레이티드 | 임프린트 리소그래피 프로세스들에서의 광학 층들의 구성 |
| EP3540499A1 (en) | 2018-03-13 | 2019-09-18 | Thomson Licensing | Image sensor comprising a color splitter with two different refractive indexes |
| EP3540479A1 (en) | 2018-03-13 | 2019-09-18 | Thomson Licensing | Diffraction grating comprising double-materials structures |
| EP3588150A1 (en) | 2018-06-29 | 2020-01-01 | Thomson Licensing | An optical device comprising multi-layer waveguides |
| EP3591700A1 (en) | 2018-07-02 | 2020-01-08 | Thomson Licensing | Image sensor comprising a color splitter with two different refractive indexes, and different height |
| EP3671310A1 (en) | 2018-12-18 | 2020-06-24 | Thomson Licensing | Optical manipulation apparatus for trapping or moving micro or nanoparticles |
| EP3671322A1 (en) | 2018-12-18 | 2020-06-24 | Thomson Licensing | Device for forming an outgoing electromagnetic wave from an incident electromagnetic wave |
| EP3671293A1 (en) | 2018-12-21 | 2020-06-24 | Thomson Licensing | An optical device comprising at least one diffraction grating having a grating pitch above the wavelength |
| CN114514443A (zh) | 2019-07-19 | 2022-05-17 | 奇跃公司 | 制造衍射光栅的方法 |
| WO2021191150A1 (en) * | 2020-03-23 | 2021-09-30 | Interdigital Ce Patent Holdings, Sas | Unpolarized light grating in-coupler |
| CN114980593B (zh) * | 2021-02-18 | 2025-07-11 | 北京小米移动软件有限公司 | 光学膜、壳体、终端和光学膜的制备方法 |
| CN117480420A (zh) * | 2021-04-16 | 2024-01-30 | 奇跃公司 | 组合光学部件中的纳米图案封装功能、方法和工艺 |
| US12442961B1 (en) | 2021-07-23 | 2025-10-14 | Apple Inc. | Methods of forming holographic gratings for optical systems |
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| CN104321693A (zh) * | 2012-05-25 | 2015-01-28 | 苹果公司 | 具有宽带防反射膜的显示器 |
| WO2018039271A1 (en) * | 2016-08-22 | 2018-03-01 | Magic Leap, Inc. | Nanograting method and apparatus |
| CN108474875A (zh) * | 2015-09-23 | 2018-08-31 | 康宁公司 | 使用纳米结构化涂层的oled的光提取 |
| WO2019079679A1 (en) * | 2017-10-20 | 2019-04-25 | Magic Leap, Inc. | CONFIGURING OPTICAL LAYERS IN PRINTING LITHOGRAPHY METHODS |
| CN110023234A (zh) * | 2016-12-02 | 2019-07-16 | 分子印记公司 | 在压印光刻工艺中配置光学层 |
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| JP2006523383A (ja) * | 2003-03-04 | 2006-10-12 | ピクセリジェント・テクノロジーズ・エルエルシー | フォトリソグラフィ用のナノサイズ半導体粒子の応用 |
| EP1479734B1 (en) | 2003-05-20 | 2009-02-11 | DSM IP Assets B.V. | Nano-structured surface coating process, nano-structured coatings and articles comprising the coating |
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2018
- 2018-10-19 KR KR1020207013899A patent/KR102383721B1/ko active Active
- 2018-10-19 JP JP2020521998A patent/JP7169350B2/ja active Active
- 2018-10-19 CN CN202210838277.6A patent/CN115079514B/zh active Active
- 2018-10-19 CN CN201880067545.0A patent/CN111226143B/zh active Active
- 2018-10-19 KR KR1020257004608A patent/KR20250026388A/ko active Pending
- 2018-10-19 EP EP18869184.4A patent/EP3698181A4/en active Pending
- 2018-10-19 AU AU2018351321A patent/AU2018351321B9/en active Active
- 2018-10-19 US US16/165,027 patent/US10670971B2/en active Active
- 2018-10-19 WO PCT/US2018/056644 patent/WO2019079679A1/en not_active Ceased
- 2018-10-19 KR KR1020227010808A patent/KR102769774B1/ko active Active
- 2018-10-19 IL IL273853A patent/IL273853B2/en unknown
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2020
- 2020-04-27 US US16/859,584 patent/US10969692B2/en active Active
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2021
- 2021-04-05 US US17/222,492 patent/US11281109B2/en active Active
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2022
- 2022-03-03 US US17/685,781 patent/US11550226B2/en active Active
- 2022-04-20 JP JP2022069396A patent/JP2022089961A/ja active Pending
- 2022-11-14 JP JP2022181728A patent/JP7427065B2/ja active Active
- 2022-12-13 US US18/080,490 patent/US12044976B2/en active Active
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2023
- 2023-11-28 AU AU2023274092A patent/AU2023274092B2/en active Active
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2024
- 2024-06-05 US US18/734,904 patent/US12332572B2/en active Active
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2025
- 2025-05-09 US US19/204,304 patent/US20250264806A1/en active Pending
Patent Citations (5)
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| CN104321693A (zh) * | 2012-05-25 | 2015-01-28 | 苹果公司 | 具有宽带防反射膜的显示器 |
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