JP7158348B2 - 電極画定共振器 - Google Patents
電極画定共振器 Download PDFInfo
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- 229910052783 alkali metal Inorganic materials 0.000 description 4
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/176—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of ceramic material
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
本発明は、バルク音響共振器に関し、より詳しくは、共振器本体と、任意選択で、共振器本体の1つまたは複数の導電層に電気信号を供給するのに使用することができる1つまたは複数の接続構造体とを有するバルク音響共振器に関する。
無線周波数通信は、1980年代の「1G」システムから、1990年代の「2G」システム、2000年代初期の「3G」システム、2012年に標準化された現在の「4G」システムへと進化してきた。現在のRF通信では、RF信号は、表面弾性波(SAW)フィルタまたはバルク弾性波(BAW)フィルタを用いてフィルタリングされる。
Claims (14)
- バルク音響共振器であって、
ある厚さを有する圧電層と、
素子層と、
前記素子層とは反対側の前記圧電層上にあり、かつ、あるピッチで互いに間隔を置いた複数の第1導電線またはフィンガを有する上面導電層とを含む共振器本体であって、前記圧電層とは反対側の前記素子層の第1の表面の実質上すべてが、前記共振器本体とは別個の構成要素であるキャリアに直接又は間接的に隣接して前記共振器本体を実装するために用いられる、共振器本体と、
前記共振器本体の隣に配置され、かつ、前記共振器本体の前記圧電層、前記素子層及び前記上面導電層から形成される接続構造体であって、前記接続構造体がスロットによって前記共振器本体から分離されており、前記接続構造体が前記接続構造体と前記共振器本体との間の前記スロットに接続されるテザー構造を有し、前記テザー構造は、電気信号を前記共振器本体の前記上面導電層に前記テザー構造を横切って伝導するように構成されるテザー導体と、前記テザー導体に垂直に位置合せされた前記圧電層の一部分とを含む、接続構造体と、
を備え、
前記共振器本体が、音響共振の合成モード(C)で共振するように構成され、前記音響共振の前記合成モード(C)が、(i)前記厚さによって定義される前記音響共振の厚さモード共振(T)と(ii)前記ピッチによって定義される前記音響共振の横モード(L)との組合せである、バルク音響共振器。 - 前記圧電層とは反対側の前記素子層の前記第1の表面のすべてが、前記キャリアに直接又は間接的に隣接して前記共振器本体の全体を実装するために用いられる、請求項1に記載のバルク音響共振器。
- 前記素子層が、ダイヤモンドを含む、請求項1又は2に記載のバルク音響共振器。
- 前記共振器本体が、前記圧電層と前記素子層との間に底面導電層をさらに備える、請求項1~3のいずれか一項に記載のバルク音響共振器。
- 前記底面導電層が、互いに間隔を置いた複数の第2導電線を備えるか、または導電性薄板を備える、請求項4に記載のバルク音響共振器。
- 前記共振器本体が、
前記圧電層とは反対側の前記上面導電層上、または
前記圧電層と前記素子層との間に位置決めされた少なくとも1つの温度補償層をさらに備える、請求項1~5のいずれか一項に記載のバルク音響共振器。 - 前記キャリアに面する前記素子層の前記第1の表面が、その全体を前記キャリアに直接実装される、請求項1~6のいずれか一項に記載のバルク音響共振器。
- 前記素子層の前記第1の表面が、その全体を前記圧電層とは反対側の基板に直接実装され、
前記キャリアに面する前記基板の第2の表面が、前記共振器本体を前記キャリアに実装するために用いられる、請求項1~6のいずれか一項に記載のバルク音響共振器。 - 前記基板が、ケイ素を含む、請求項8に記載のバルク音響共振器。
- 前記共振器本体が、前記圧電層とは反対側の前記上面導電層上、または前記圧電層と前記素子層との間に位置決めされた少なくとも1つの温度補償層をさらに備える、請求項8又は9に記載のバルク音響共振器。
- 前記素子層の前記第1の表面が、その全体を少なくとも1つの温度補償層に直接実装され、
前記少なくとも1つの温度補償層が基板に直接実装され、
前記キャリアに面する前記基板の第2の表面が、前記共振器本体を前記キャリアに実装するために用いられる、請求項1~6のいずれか一項に記載のバルク音響共振器。 - 前記共振器本体が、
前記基板と前記圧電層との間に別の素子層を、または
前記基板と前記圧電層との間に別の基板を、または
両方をさらに備える、請求項8~11のいずれか一項に記載のバルク音響共振器。 - 前記素子層が、60×106Pa・s/m3以上の音響インピーダンスを有し、
前記基板が、60×106Pa・s/m3以下の音響インピーダンスを有する、請求項8~12のいずれか一項に記載のバルク音響共振器。 - 前記横モード(L)が前記合成モード(C)の強さ(dB)の20%以上を構成する、請求項1~13のいずれか一項に記載のバルク音響共振器。
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US16/037,499 US11121696B2 (en) | 2018-07-17 | 2018-07-17 | Electrode defined resonator |
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US11738539B2 (en) | 2018-07-17 | 2023-08-29 | II-VI Delaware, Inc | Bonded substrate including polycrystalline diamond film |
WO2021021719A1 (en) * | 2019-07-31 | 2021-02-04 | QXONIX Inc. | Bulk acoustic wave (baw) resonator structures, devices and systems |
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JP2003530705A (ja) | 2000-04-06 | 2003-10-14 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | チューニング可能なフィルタ構成 |
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JP2005318547A (ja) * | 2004-03-30 | 2005-11-10 | Sanyo Electric Co Ltd | バルク波デバイス |
DE102004031397A1 (de) | 2004-06-29 | 2006-01-26 | Epcos Ag | Duplexer |
JP4513860B2 (ja) * | 2005-04-13 | 2010-07-28 | 株式会社村田製作所 | 圧電薄膜フィルタ |
US7847656B2 (en) | 2006-07-27 | 2010-12-07 | Georgia Tech Research Corporation | Monolithic thin-film piezoelectric filters |
US7639105B2 (en) | 2007-01-19 | 2009-12-29 | Georgia Tech Research Corporation | Lithographically-defined multi-standard multi-frequency high-Q tunable micromechanical resonators |
US8018303B2 (en) * | 2007-10-12 | 2011-09-13 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic wave device |
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US9337799B2 (en) | 2012-11-02 | 2016-05-10 | Qualcomm Mems Technologies, Inc. | Selective tuning of acoustic devices |
US10497747B2 (en) | 2012-11-28 | 2019-12-03 | Invensense, Inc. | Integrated piezoelectric microelectromechanical ultrasound transducer (PMUT) on integrated circuit (IC) for fingerprint sensing |
DE102014103229B3 (de) | 2014-03-11 | 2015-07-23 | Epcos Ag | BAW-Resonator mit Temperaturkompensation |
US9374059B1 (en) | 2015-01-06 | 2016-06-21 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Film bulk acoustic resonator filter |
JP6441761B2 (ja) | 2015-07-29 | 2018-12-19 | 太陽誘電株式会社 | 圧電薄膜共振器及びフィルタ |
US11362640B2 (en) * | 2018-07-17 | 2022-06-14 | Ii-Vi Delaware, Inc. | Electrode-defined unsuspended acoustic resonator |
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