JP7158098B2 - 成膜装置、および、電子デバイスの製造方法 - Google Patents

成膜装置、および、電子デバイスの製造方法 Download PDF

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Publication number
JP7158098B2
JP7158098B2 JP2018143588A JP2018143588A JP7158098B2 JP 7158098 B2 JP7158098 B2 JP 7158098B2 JP 2018143588 A JP2018143588 A JP 2018143588A JP 2018143588 A JP2018143588 A JP 2018143588A JP 7158098 B2 JP7158098 B2 JP 7158098B2
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Japan
Prior art keywords
target
film
magnetic field
shielding member
magnetic
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JP2018143588A
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English (en)
Japanese (ja)
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JP2020019990A (ja
Inventor
洋紀 菅原
敏治 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Tokki Corp
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Canon Tokki Corp
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Publication date
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Priority to JP2018143588A priority Critical patent/JP7158098B2/ja
Priority to KR1020180151456A priority patent/KR102659918B1/ko
Priority to CN201910586972.6A priority patent/CN110777337B/zh
Publication of JP2020019990A publication Critical patent/JP2020019990A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
JP2018143588A 2018-07-31 2018-07-31 成膜装置、および、電子デバイスの製造方法 Active JP7158098B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018143588A JP7158098B2 (ja) 2018-07-31 2018-07-31 成膜装置、および、電子デバイスの製造方法
KR1020180151456A KR102659918B1 (ko) 2018-07-31 2018-11-29 성막 장치 및 전자 디바이스의 제조 방법
CN201910586972.6A CN110777337B (zh) 2018-07-31 2019-07-02 成膜装置以及电子器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018143588A JP7158098B2 (ja) 2018-07-31 2018-07-31 成膜装置、および、電子デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2020019990A JP2020019990A (ja) 2020-02-06
JP7158098B2 true JP7158098B2 (ja) 2022-10-21

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JP2018143588A Active JP7158098B2 (ja) 2018-07-31 2018-07-31 成膜装置、および、電子デバイスの製造方法

Country Status (3)

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JP (1) JP7158098B2 (zh)
KR (1) KR102659918B1 (zh)
CN (1) CN110777337B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109487225A (zh) * 2019-01-07 2019-03-19 成都中电熊猫显示科技有限公司 磁控溅射成膜装置及方法
JP7140801B2 (ja) * 2020-07-29 2022-09-21 キヤノントッキ株式会社 成膜装置及び電子デバイスの製造方法
JP2022048667A (ja) * 2020-09-15 2022-03-28 キヤノントッキ株式会社 スパッタ装置及び成膜方法
WO2022074893A1 (ja) * 2020-10-08 2022-04-14 株式会社アルバック 回転式カソードユニット用の駆動ブロック
CN114166590B (zh) * 2021-11-15 2022-07-15 哈尔滨工业大学（威海） 一种用于介观尺度试样力学性能测试的磁控溅射设备
KR102502692B1 (ko) 2022-08-29 2023-02-23 (주)광인사 인쇄물 내의 식별 표시를 이용한 인쇄물 식별 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211352A1 (en) 2011-02-18 2012-08-23 Toyota Motor Europe Nv/Sa Sputtering magnetron assembly
JP2015519477A (ja) 2012-06-01 2015-07-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 事前に安定させたプラズマによるプロセスのためのスパッタリング方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2660951B2 (ja) * 1992-12-25 1997-10-08 アネルバ株式会社 スパッタリング装置
CN100537833C (zh) * 2005-04-08 2009-09-09 北京实力源科技开发有限责任公司 一种具有在线清洗功能的磁控溅射靶系统及其应用方法
PL1775353T3 (pl) * 2005-09-15 2009-04-30 Applied Mat Gmbh & Co Kg Urządzenie powlekające i sposób eksploatacji urządzenia powlekającego
CN101285172A (zh) * 2007-05-11 2008-10-15 胜倍尔超强镀膜（苏州）有限公司 一种旋转磁控溅射靶
JP5550565B2 (ja) * 2008-12-15 2014-07-16 株式会社アルバック スパッタリング装置及びスパッタリング方法
JP6494296B2 (ja) * 2015-01-20 2019-04-03 株式会社アルバック スパッタリング装置、薄膜製造方法
JP2016204705A (ja) 2015-04-22 2016-12-08 キヤノントッキ株式会社 成膜装置及び成膜方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120211352A1 (en) 2011-02-18 2012-08-23 Toyota Motor Europe Nv/Sa Sputtering magnetron assembly
JP2015519477A (ja) 2012-06-01 2015-07-09 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 事前に安定させたプラズマによるプロセスのためのスパッタリング方法

Also Published As

Publication number Publication date
CN110777337A (zh) 2020-02-11
KR20200014169A (ko) 2020-02-10
CN110777337B (zh) 2023-05-02
KR102659918B1 (ko) 2024-04-22
JP2020019990A (ja) 2020-02-06

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