TWI766741B - 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 - Google Patents
開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 Download PDFInfo
- Publication number
- TWI766741B TWI766741B TW110123823A TW110123823A TWI766741B TW I766741 B TWI766741 B TW I766741B TW 110123823 A TW110123823 A TW 110123823A TW 110123823 A TW110123823 A TW 110123823A TW I766741 B TWI766741 B TW I766741B
- Authority
- TW
- Taiwan
- Prior art keywords
- shielding plate
- shielding
- plate
- film deposition
- thin film
- Prior art date
Links
- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000010408 film Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 238000013459 approach Methods 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 13
- 238000011109 contamination Methods 0.000 abstract description 6
- 238000005137 deposition process Methods 0.000 abstract description 2
- 230000007246 mechanism Effects 0.000 description 7
- 239000013077 target material Substances 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000000356 contaminant Substances 0.000 description 4
- 239000011553 magnetic fluid Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
本發明提供一種具有開合式遮蔽構件的薄膜沉積機台,主要包括一反應腔體、一承載盤及一開合式遮蔽構件,其中部分開合式遮蔽構件及承載盤位於反應腔體內。開合式遮蔽構件包括一第一遮蔽板、一第二遮蔽板及一驅動裝置,其中驅動裝置連接第一遮蔽板及第二遮蔽板,並用以驅動第一遮蔽板及第二遮蔽板朝相反方向擺動。在進行沉積製程時,驅動裝置會帶動第一及第二遮蔽板相互遠離,並切換到開啟狀態。在進行清潔製程時,驅動裝置則會帶動第一及第二遮蔽板相互靠近,並切換為遮蔽狀態以遮蔽承載盤,避免在清潔薄膜沉積機台的過程中汙染承載盤。
Description
本發明有關於一種具有開合式遮蔽構件的薄膜沉積機台,主要透過開合式遮蔽構件遮擋承載盤,以避免在清潔處理腔室的過程中汙染承載盤。
化學氣相沉積(CVD)、物理氣相沉積(PVD)及原子層沉積(ALD)皆是常用的薄膜沉積設備,並普遍被使用在積體電路、發光二極體及顯示器等製程中。
沉積設備主要包括一腔體及一晶圓承載盤,其中晶圓承載盤位於腔體內,並用以承載至少一晶圓。以物理氣相沉積為例,腔體內需要設置一靶材,其中靶材面對晶圓承載盤上的晶圓。在進行物理氣相沉積時,可將惰性氣體及/或反應氣體輸送至腔體內,分別對靶材及晶圓承載盤施加偏壓,並透過晶圓承載盤加熱承載的晶圓。
腔體內的惰性氣體因為高壓電場的作用,形成離子化的惰性氣體,離子化的惰性氣體會受到靶材上的偏壓吸引而轟擊靶材。從靶材濺出的靶材原子或分子受到晶圓承載盤上的偏壓吸引,並沉積在加熱的晶圓的表面,以在晶圓的表面形成薄膜。
在經過一段時間的使用後,腔體的內表面會形成沉積薄膜,因此需要週期性的清潔腔體,以避免沉積薄膜在製程中掉落,進而汙染晶圓。此外靶材的表面亦可能形成氧化物或其他汙染物,因此同樣需要週期性的清潔靶材。一般而言,通常會透過預燒(burn-in)製程,以電漿離子撞擊腔體內的靶材,以去除靶材表面的氧化物或其他汙染物。
在進行上述清潔腔體及靶材時,需要將腔體內的晶圓承載盤及晶圓取出,或者隔離晶圓承載盤,以避免清潔過程中汙染晶圓承載盤及晶圓。
一般而言,薄膜沉積機台在經過一段時間的使用後,通常需要進行清潔,以去除腔室內沉積的薄膜及靶材上的氧化物或氮化物。在清潔的過程中產生的微粒會汙染承載盤,因此需要隔離承載盤及汙染物。本發明提出一種開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台,主要透過驅動裝置帶動兩個遮蔽板朝相反方向擺動,使得兩個遮蔽板操作在一開啟狀態及一遮蔽狀態。操作在遮蔽狀態的遮蔽板可用以遮蔽承載盤,以避免清潔腔體或靶材時產生的微粒汙染承載盤。
本發明的一目的,在於提供一種具有開合式遮蔽構件的薄膜沉積機台,主要包括一反應腔體、一承載盤及一開合式遮蔽構件。開合式遮蔽構件包括一驅動裝置及兩個遮蔽板,其中驅動裝置連接並驅動兩個遮蔽板分別朝相反方向擺動,使得兩個遮蔽板操作在一開啟狀態及一遮蔽狀態。
在清潔反應腔體時,驅動裝置帶動兩個遮蔽板以擺動的方式相互靠近,使得兩個遮蔽板相靠近並遮擋容置空間內的承載盤,以避免清潔過
程中使用的電漿或產生的污染接觸承載盤及/或其承載的基板。在進行沉積製程時,驅動裝置帶動兩個遮蔽板以擺動的方式相互遠離,並可對反應腔體內的基板進行薄膜沉積。
本發明的一目的,在於提供一種具有開合式遮蔽構件的薄膜沉積機台,主要透過兩個遮蔽板構成一個完整的遮蔽件,可縮小收納遮蔽板需要的空間。在本發明一實施例中,兩個遮蔽板可以在反應腔體的容置空間內進行相反方向的擺動,其中兩個遮蔽板可以在反應腔體的容置空間內操作在開啟狀態或遮蔽狀態,可簡化反應腔體的構造及縮小反應腔體的體積。
本發明的一目的,在於提供一種具有開合式遮蔽構件的薄膜沉積機台,其中驅動裝置透過兩個連接臂分別連接及承載兩個遮蔽板,以降低連接臂的負重。此外亦可進一步使用厚度較大的遮蔽板,以防止遮蔽板在清潔薄膜沉積機台時發生高溫變形,並有利於提高遮蔽板遮擋承載盤的效果。
為了達到上述的目的,本發明提出一種薄膜沉積機台,包括:一反應腔體,包括一容置空間;一承載盤,位於容置空間內,並用以承載至少一基板;及一開合式遮蔽構件,包括:一第一遮蔽板,位於容置空間內;一第二遮蔽板,位於容置空間內;一驅動裝置,連接第一遮蔽板及第二遮蔽板,並分別驅動第一遮蔽板及第二遮蔽板朝相反的方向擺動,使得第一遮蔽板及第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中遮蔽狀態的第一遮蔽板及第二遮蔽板用以遮擋承載盤。
本發明提出一種開合式遮蔽構件,適用於一薄膜沉積機台,包括:一第一遮蔽板;一第二遮蔽板;及一驅動裝置,連接第一遮蔽板及第二
遮蔽板,並分別驅動第一遮蔽板及第二遮蔽板朝相反的方向擺動,使得第一遮蔽板及第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中遮蔽狀態的第一遮蔽板接近第二遮蔽板,而開啟狀態的第一遮蔽板及第二遮蔽板之間則形成一間隔空間。
所述的薄膜沉積機台及開合式遮蔽構件,其中驅動裝置包括一軸封裝置及至少一驅動馬達,驅動馬達透過軸封裝置連接第一遮蔽板及第二遮蔽板。
所述的薄膜沉積機台及開合式遮蔽構件,其中軸封裝置包括一外管體及一軸體,外管體包括一空間用以容置軸體,驅動馬達透過外管體連接第一遮蔽板,透過軸體連接第二遮蔽板,並同步驅動軸體及外管體朝相反的方向轉動。
所述的薄膜沉積機台及開合式遮蔽構件,包括一第一連接臂及一第二連接臂,外管體透過第一連接臂連接第一遮蔽板,而軸體則透過第二連接臂連接第二遮蔽板。
所述的薄膜沉積機台及開合式遮蔽構件,包括複數個位置感測單元設置於反應腔體,並用以感測第一遮蔽板及第二遮蔽板的位置。
所述的薄膜沉積機台及開合式遮蔽構件,其中第一遮蔽板的面積大於第二遮蔽板的面積。
10:薄膜沉積機台
100:開合式遮蔽構件
11:反應腔體
111:擋件
112:開口
12:容置空間
121:清潔空間
13:承載盤
141:第一連接臂
143:第二連接臂
15:遮蔽件
151:第一遮蔽板
152:間隔空間
153:第二遮蔽板
161:靶材
163:基板
17:驅動裝置
171:驅動馬達
173:軸封裝置
1731:外管體
1732:空間
1733:軸體
18:連動機構
181:驅動齒輪
183:第一從動齒輪
185:第二從動齒輪
19:位置感測單元
[圖1]為本發明具有開合式遮蔽構件的薄膜沉積機台操作在遮蔽狀態一實施例的側面剖面示意圖。
[圖2]為本發明薄膜沉積機台的開合式遮蔽構件操作在開啟狀態一實施例的立體示意圖。
[圖3]為本發明薄膜沉積機台的開合式遮蔽構件操作在遮蔽狀態一實施例的立體示意圖。
[圖4]為本發明開合式遮蔽構件的驅動裝置一實施例的立體剖面示意圖。
[圖5]為本發明開合式遮蔽構件的連動機構一實施例的立體示意圖。
[圖6]為本發明具有開合式遮蔽構件的薄膜沉積機台操作在開啟狀態一實施例的俯視圖。
[圖7]為本發明具有開合式遮蔽構件的薄膜沉積機台操作在遮蔽狀態一實施例的俯視圖。
[圖8]為本發明具有開合式遮蔽構件的薄膜沉積機台操作在開啟狀態又一實施例的俯視圖。
請參閱圖1,為本發明具有開合式遮蔽構件的薄膜沉積機台操作在遮蔽狀態一實施例的側面剖面示意圖。如圖所示,薄膜沉積機台10主要包括一反應腔體11、一承載盤13及一開合式遮蔽構件100,其中反應腔體11包括一容置空間12用以容置承載盤13及部分的開合式遮蔽構件100。
承載盤13位於反應腔體11的容置空間12內,並用以承載至少一基板163。以薄膜沉積機台10為物理氣相沉積腔體為例,反應腔體11內設置一
靶材161,其中靶材161面對基板163及承載盤13。例如靶材161可設置在反應腔體11的上表面,並朝向位於容置空間12內的承載盤13及/或基板163。
請配合參閱圖2及圖3,開合式遮蔽構件100包括一第一遮蔽板151、一第二遮蔽板153及一驅動裝置17,其中第一遮蔽板151及第二遮蔽板153位於容置空間12內。驅動裝置17連接第一遮蔽板151及第二遮蔽板153,並分別驅動第一遮蔽板151及第二遮蔽板153朝相反方向擺動,例如第一遮蔽板151及第二遮蔽板153以驅動裝置17為軸心同步擺動。
在本發明一實施例中,驅動裝置17連接一第一連接臂141及一第二連接臂143,並透過第一連接臂141及一第二連接臂143分別連接第一遮蔽板151及第二遮蔽板153,其中驅動裝置17分別透過第一連接臂141及一第二連接臂143帶動第一遮蔽板151及第二遮蔽板153朝相反方向擺動或轉動。
第一遮蔽板151及第二遮蔽板153可為板體,其中第一遮蔽板151及第二遮蔽板153的面積及形狀可為相近,例如第一遮蔽板151及第二遮蔽板153可為半圓形的板體。當驅動裝置17帶動第一遮蔽板151及第二遮蔽板153閉合時,第一遮蔽板151及第二遮蔽板153會相互靠近並形成一圓板狀的遮蔽件15,並透過遮蔽件15遮擋承載盤13及/或基板163。
本發明實施例所述的第一遮蔽板151及第二遮蔽板153操作在遮蔽狀態或第一遮蔽板151及第二遮蔽板153相連接,可被定義為第一遮蔽板151及第二遮蔽板153相互靠近,直到兩者之間的間距小於一門檻值,例如小於1mm。具體而言,第一遮蔽板151及第二遮蔽板153並不會直接接觸,以防止第一遮蔽板151及第二遮蔽板153在接觸過程中產生微粒,而汙染反應腔體11的容置空間12及/或承載盤13。
在本發明一實施例中,第一遮蔽板151及第二遮蔽板153可設置在不同的高度,例如第一遮蔽板151高於第二遮蔽板153,當第一遮蔽板151及第二遮蔽板153操作在遮蔽狀態時,部分的第一遮蔽板151會與部分的第二遮蔽板153重疊,可提高遮蔽件15的遮擋效果。
上述第一遮蔽板151及第二遮蔽板153的面積及形狀相近,並為半圓形的板體僅為本發明一實施例,並非本發明權利範圍的限制。在實際應用時,第一遮蔽板151及第二遮蔽板153可以是具有不同面積及形狀的板體,亦可為方形、橢圓形或任意幾何形狀的板體,例如第一遮蔽板151的面積可大於第二遮蔽板153的面積。只要遮蔽件15是由第一遮蔽板151及第二遮蔽板153所構成,其中第一遮蔽板151及第二遮蔽板153閉合時,可以達到遮擋承載盤13及/或基板163的目的都屬於本發明的權利範圍。
以第一遮蔽板151及第二遮蔽板153為半圓形的板體為例,第一遮蔽板151及第二遮蔽板153分別具有一直線的側邊及一半圓形或弧形的側邊,其中第一遮蔽板151及第二遮蔽板153的直線側邊彼此面對。當驅動裝置17驅動第一遮蔽板151及第二遮蔽板153相互靠近時,第一遮蔽板151及第二遮蔽板153的直線側邊會相靠近,並形成圓形的遮蔽件15。上述第一遮蔽板151及第二遮蔽板153透過直線的側邊相連接僅為本發明一實施例,並非本發明權利範圍的限制。在實際應用時,上述第一遮蔽板151及第二遮蔽板153的直線側邊亦可以是對應的曲線或鋸齒狀側邊,只要第一遮蔽板151及第二遮蔽板153相連接的側邊可以靠近並結合,都可以有效遮擋承載盤13。
在本發明一實施例中,如圖4所示,驅動裝置17包括至少一驅動馬達171及一軸封裝置173,其中驅動馬達171透過軸封裝置173連接第一遮
蔽板151及第二遮蔽板153。驅動馬達171位於反應腔體11的容置空間12外,而軸封裝置173則穿過並設置在反應腔體11,其中部分的軸封裝置173位於反應腔體11的容置空間12內。
軸封裝置173包括一外管體1731及一軸體1733。外管體1731包括一空間1732用以容置軸體1733,其中外管體1731及軸體1733同軸設置,且外管體1731及軸體1733可相對轉動。外管體1731連接第一連接臂141,並經由第一連接臂141連接並帶動第一遮蔽板151擺動。軸體1733連接第二連接臂143,並經由第二連接臂143連接並帶動第二遮蔽板153擺動。
軸封裝置173可以是一般常見的軸封,主要用以隔離反應腔體11的容置空間12與外部的空間,以維持容置空間12的真空。在本發明另一實施例中,軸封裝置173可以是磁流體軸封,並包括複數個軸承、至少一永久磁鐵、至少一磁極片及至少一磁性流體。例如軸承可套設在軸體1733的外表面,並位於軸體1733及外管體1731之間,使得軸體1733及外管體1731可相對轉動。永久磁鐵設置在外管體1731的內表面,並位於兩個軸承之間。兩個磁極片設置在外管體1731的內表面,並分別位於永久磁鐵及兩個軸承之間。磁極片與軸體1733的外表面之間具有一間隙,並將磁性流體設置在間隙內。上述關於磁流體軸封的構造僅為本發明一實施例,並非本發明權利範圍的限制。
在本發明一實施例中,如圖4所示,驅動馬達171的數量可為兩個,兩個驅動馬達171分別連接軸封裝置173的外管體1731及軸體1733,並分別驅動外管體1731及軸體1733朝相反方向同步轉動,以透過外管體1731及軸體1733分別帶動第一遮蔽板151及第二遮蔽板153朝不同方向擺動。
在本發明另一實施例中,如圖5所示,驅動馬達171的數量可為一個,並透過一連動機構18經由第一連接臂141及第二連接臂143分別連接及驅動第一遮蔽板151及第二遮蔽板153朝相反方向同步擺動。具體而言,連動機構18包括一驅動齒輪181、一第一從動齒輪183及一第二從動齒輪185,其中驅動齒輪181嚙合第一從動齒輪183及第二從動齒輪185。第一從動齒輪183透過外管體1731及第一連接臂141連接第一遮蔽板151,而第二從動齒輪185則透過軸體1733及第二連接臂143連接第二遮蔽板153。當驅動齒輪181轉動時,第一從動齒輪183及第二從動齒輪185會朝相反方向轉動,並驅動外管體1731及軸體1733朝相反方向轉動,以帶動第一遮蔽板151及第二遮蔽板153同步朝相反方向擺動。
連動機構18包括三個齒輪僅為本發明一實施例,在不同實施例中連動機構18可包括複數個轉輪及複數個皮帶,其中驅動馬達171連接其中一個轉輪,並透過轉輪及皮帶帶動外管體1731及軸體1733朝相反方向轉動。
具體而言,本發明的薄膜沉積機台10及/或開合式遮蔽構件100可操作在兩種狀態,分別是開啟狀態遮蔽狀態。如圖2及圖6所示,驅動裝置17可驅動第一遮蔽板151及第二遮蔽板153朝相反方向擺動,使得第一遮蔽板151及第二遮蔽板153相互遠離,並操作在開啟狀態。操作在開啟狀態的第一遮蔽板151及第二遮蔽板153之間會形成一間隔空間152,使得靶材161與承載盤13及基板163之間不存在第一遮蔽板151及第二遮蔽板153。
而後可驅動承載盤13及基板163朝靶材161的方向靠近,並透過容置空間12內的氣體,例如惰性氣體,撞擊靶材161,以在基板163的表面沉積薄膜。
在本發明一實施例中,如圖1所示,反應腔體11的容置空間12可設置一擋件111,其中擋件111的一端連接反應腔體11,而擋件111的另一端則形成一開口112。承載盤13朝靶材161靠近時,會進入或接觸擋件111形成的開口112。反應腔體11、承載盤13及擋件111會在容置空間12內區隔出一反應空間,並在反應空間內的基板163表面沉積薄膜,可防止在反應空間外的反應腔體11及承載盤13的表面形成沉積薄膜。
此外,如圖3及圖7所示,驅動裝置17可驅動第一遮蔽板151及第二遮蔽板153朝相反方向擺動,使得第一遮蔽板151及第二遮蔽板153相互靠近,並操作在遮蔽狀態。閉合的第一遮蔽板151及第二遮蔽板153可形成遮蔽件15,其中遮蔽件15會位在靶材161與承載盤13之間,並用以遮蔽承載盤13以隔離靶材161及承載盤13。
遮蔽件15可在容置空間12內區隔一清潔空間121,其中清潔空間121與反應空間的區域部分重疊或相近。可在清潔空間121內進行預燒(burn-in)製程,以清潔靶材161及清潔空間121內的反應腔體11及/或擋件111,並去除靶材161表面的氧化物、氮化物或其他汙染物,及反應腔體11及/或擋件111表面的沉積薄膜。
在清潔薄膜沉積機台10的過程中,承載盤13及/或基板163會被遮蔽件15遮擋或隔離,以避免清潔過程中產生的物質汙染或沉積在承載盤13及/或基板163的表面。
具體而言,本發明透過第一遮蔽板151及第二遮蔽板153構成遮蔽件15,並透過第一連接臂141及第二連接臂143分別承載第一遮蔽板151及第二遮蔽板153的重量,可降低第一連接臂141及第二連接臂143的負擔。
透過使用兩個連接臂141/143分別承載部分遮蔽板151/153的重量,可進一步增加第一遮蔽板151及第二遮蔽板153的厚度或重量。較為厚重的第一遮蔽板151及第二遮蔽板153可避免在清潔薄膜沉積機台10的過程中發生高溫變形,並可防止清潔過程中的電漿或汙染通過變形的第一遮蔽板151及第二遮蔽板153接觸下方的承載盤13或基板163。
此外將遮蔽件15區分成兩個可相互連接及分離的第一遮蔽板151及第二遮蔽板153,更有利於縮小開啟狀態下的第一遮蔽板151及第二遮蔽板153需要的收納空間,並可簡化或調整反應腔體11的構造。
在本發明一實施例中,如圖6及圖7所示,第一遮蔽板151及第二遮蔽板153可以在反應腔體11的容置空間12內操作在開啟狀態及遮蔽狀態,而不需要額外設置一個或多個儲存腔體來儲存開啟狀態的遮蔽板。例如可使得反應腔體11及/容置空間12的體積略大於原本的體積,便可使得第一遮蔽板151及第二遮蔽板153在反應腔體11的容置空間12內開啟或閉合。
在本發明一實施例中,可進一步在反應腔體11上設置複數個位置感測單元19,其中位置感測單元19朝向容置空間12,並用以感測第一遮蔽板151及第二遮蔽板153的位置,以判斷第一遮蔽板151及第二遮蔽板153是否處在開啟狀態。例如位置感測單元19可以是光感測單元。
若第一遮蔽板151及第二遮蔽板153未完全處在開啟狀態,承載盤13便朝靶材161的方向位移,可能導致承載盤13碰撞第一遮蔽板151及第二遮蔽板153,而造成承載盤13、第一遮蔽板151及/或第二遮蔽板153的損壞。在實際應用時,可調整位置感測單元19的位置,其中第一遮蔽板151及第二遮蔽板153開啟到特定角度後才會被位置感測單元19所感測。而後承載盤13
才能朝靶材161的方向靠近,以避免承載盤13、第一遮蔽板151及第二遮蔽板153發生碰撞。
在實際應用時可依據薄膜沉積機台10上其他機構或動線的配置,調整開合式遮蔽構件100在反應腔體11的位置。以反應腔體11的容置空間12為四方體為例,如圖6及圖7所示,開合式遮蔽構件100的驅動裝置17可設置在反應腔體11及/或容置空間12的側邊。如圖8所示,開合式遮蔽構件100的驅動裝置17亦可設置或靠近反應腔體11/或容置空間12的角落或頂角,以利於在反應腔11的側邊設置基板進料口及抽氣管線等機構。
以上所述者,僅為本發明之一較佳實施例而已,並非用來限定本發明實施之範圍,即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾,均應包括於本發明之申請專利範圍內。
10:薄膜沉積機台
100:開合式遮蔽構件
11:反應腔體
111:擋件
112:開口
12:容置空間
121:清潔空間
13:承載盤
141:第一連接臂
143:第二連接臂
15:遮蔽件
151:第一遮蔽板
153:第二遮蔽板
161:靶材
163:基板
17:驅動裝置
Claims (9)
- 一種薄膜沉積機台,包括:一反應腔體,包括一容置空間;一承載盤,位於該容置空間內,並用以承載至少一基板;及一開合式遮蔽構件,包括:一第一遮蔽板,位於該容置空間內;一第二遮蔽板,位於該容置空間內;一驅動裝置,連接該第一遮蔽板及該第二遮蔽板,並分別驅動該第一遮蔽板及該第二遮蔽板朝相反的方向擺動,使得該第一遮蔽板及該第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中該遮蔽狀態的該第一遮蔽板及該第二遮蔽板相互靠近,並用以遮擋該承載盤。
- 如請求項1所述的薄膜沉積機台,其中該驅動裝置包括一軸封裝置及至少一驅動馬達,該驅動馬達透過該軸封裝置連接該第一遮蔽板及該第二遮蔽板。
- 如請求項2所述的薄膜沉積機台,其中該軸封裝置包括一外管體及一軸體,該外管體包括一空間用以容置該軸體,該驅動馬達透過該外管體連接該第一遮蔽板,透過該軸體連接該第二遮蔽板,並同步驅動該軸體及該外管體朝相反的方向轉動。
- 如請求項3所述的薄膜沉積機台,包括一第一連接臂及一第二連接臂,該外管體透過該第一連接臂連接該第一遮蔽板,而該軸體則透過該第二連接臂連接該第二遮蔽板。
- 如請求項1所述的薄膜沉積機台,包括複數個位置感測單元設置於該反應腔體,並用以感測該第一遮蔽板及該第二遮蔽板的位置。
- 如請求項1所述的薄膜沉積機台,其中該第一遮蔽板的高度高於該第二遮蔽板,操作在該遮蔽狀態的部分該第一遮蔽板與部分該第二遮蔽板重疊。
- 一種開合式遮蔽構件,適用於一薄膜沉積機台,包括:一第一遮蔽板;一第二遮蔽板;及一驅動裝置,連接該第一遮蔽板及該第二遮蔽板,並分別驅動該第一遮蔽板及該第二遮蔽板朝相反的方向擺動,使得該第一遮蔽板及該第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中該遮蔽狀態的該第一遮蔽板靠近該第二遮蔽板,而該開啟狀態的該第一遮蔽板及該第二遮蔽板之間則形成一間隔空間,其中該驅動裝置包括一軸封裝置及至少一驅動馬達,該驅動馬達透過該軸封裝置連接該第一遮蔽板及該第二遮蔽板。
- 如請求項7所述的開合式遮蔽構件,其中該軸封裝置包括一外管體及一軸體,該外管體包括一空間用以容置該軸體,該驅動馬達透過該外管體連接該第一遮蔽板,透過該軸體連接該第二遮蔽板,並同步驅動該軸體及該外管體朝相反的方向轉動。
- 一種開合式遮蔽構件,適用於一薄膜沉積機台,包括:一第一遮蔽板;一第二遮蔽板;及一驅動裝置,連接該第一遮蔽板及該第二遮蔽板,並分別驅動該第一遮蔽板及該第二遮蔽板朝相反的方向擺動,使得該第一遮蔽板及該第二遮蔽板在一開啟狀態及一遮蔽狀態之間切換,其中該遮蔽狀態的該第一遮蔽板靠近該第二 遮蔽板,而該開啟狀態的該第一遮蔽板及該第二遮蔽板之間則形成一間隔空間,其中該第一遮蔽板的面積大於該第二遮蔽板的面積。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110123823A TWI766741B (zh) | 2021-06-29 | 2021-06-29 | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 |
US17/473,038 US11961724B2 (en) | 2021-06-29 | 2021-09-13 | Shielding device and thin-film-deposition equipment with the same |
US17/525,403 US11929242B2 (en) | 2021-06-29 | 2021-11-12 | Shielding mechanism and thin-film-deposition equipment using the same |
US17/564,771 US11972936B2 (en) | 2021-06-29 | 2021-12-29 | Shielding device and thin-film-deposition equipment with the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110123823A TWI766741B (zh) | 2021-06-29 | 2021-06-29 | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI766741B true TWI766741B (zh) | 2022-06-01 |
TW202301511A TW202301511A (zh) | 2023-01-01 |
Family
ID=83103779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110123823A TWI766741B (zh) | 2021-06-29 | 2021-06-29 | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 |
Country Status (2)
Country | Link |
---|---|
US (3) | US11961724B2 (zh) |
TW (1) | TWI766741B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI766741B (zh) * | 2021-06-29 | 2022-06-01 | 天虹科技股份有限公司 | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110135842A1 (en) * | 2005-11-18 | 2011-06-09 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20140290578A1 (en) * | 2013-03-28 | 2014-10-02 | Tokyo Electron Limited | Film deposition apparatus |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3480535A (en) * | 1966-07-07 | 1969-11-25 | Trw Inc | Sputter depositing semiconductor material and forming semiconductor junctions through a molten layer |
US6669829B2 (en) * | 2002-02-20 | 2003-12-30 | Applied Materials, Inc. | Shutter disk and blade alignment sensor |
US8021527B2 (en) * | 2005-09-14 | 2011-09-20 | Applied Materials, Inc. | Coaxial shafts for radial positioning of rotating magnetron |
JP2007131883A (ja) * | 2005-11-09 | 2007-05-31 | Ulvac Japan Ltd | 成膜装置 |
TWI431668B (zh) * | 2009-06-24 | 2014-03-21 | Ulvac Inc | 真空成膜裝置及真空成膜裝置之擋板位置檢測方法 |
WO2013136387A1 (ja) * | 2012-03-14 | 2013-09-19 | キヤノンアネルバ株式会社 | スパッタ装置 |
JP6698509B2 (ja) * | 2016-12-14 | 2020-05-27 | 株式会社神戸製鋼所 | ターゲット用シャッタ機構およびそれを備えた成膜装置 |
TWI815135B (zh) * | 2021-06-29 | 2023-09-11 | 天虹科技股份有限公司 | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 |
TWI773411B (zh) * | 2021-06-29 | 2022-08-01 | 天虹科技股份有限公司 | 遮蔽裝置及具有遮蔽裝置的薄膜沉積設備 |
TWI766741B (zh) * | 2021-06-29 | 2022-06-01 | 天虹科技股份有限公司 | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 |
TWI777640B (zh) * | 2021-06-29 | 2022-09-11 | 天虹科技股份有限公司 | 遮蔽機構及具有遮蔽機構的薄膜沉積腔體 |
TWI764784B (zh) * | 2021-07-16 | 2022-05-11 | 天虹科技股份有限公司 | 雙層式遮蔽構件及具有雙層式遮蔽構件的薄膜沉積機台 |
TWI788032B (zh) * | 2021-09-28 | 2022-12-21 | 天虹科技股份有限公司 | 開合式遮蔽機構及具有開合式遮蔽機構的薄膜沉積機台 |
TWI788035B (zh) * | 2021-09-30 | 2022-12-21 | 天虹科技股份有限公司 | 用以感測遮蔽機構開合的薄膜沉積機台 |
-
2021
- 2021-06-29 TW TW110123823A patent/TWI766741B/zh active
- 2021-09-13 US US17/473,038 patent/US11961724B2/en active Active
- 2021-11-12 US US17/525,403 patent/US11929242B2/en active Active
- 2021-12-29 US US17/564,771 patent/US11972936B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110135842A1 (en) * | 2005-11-18 | 2011-06-09 | Tokyo Electron Limited | Method and system for performing different deposition processes within a single chamber |
US20140290578A1 (en) * | 2013-03-28 | 2014-10-02 | Tokyo Electron Limited | Film deposition apparatus |
Also Published As
Publication number | Publication date |
---|---|
TW202301511A (zh) | 2023-01-01 |
US20220411922A1 (en) | 2022-12-29 |
US11961724B2 (en) | 2024-04-16 |
US20220415622A1 (en) | 2022-12-29 |
US20220415633A1 (en) | 2022-12-29 |
US11929242B2 (en) | 2024-03-12 |
US11972936B2 (en) | 2024-04-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3732250B2 (ja) | インライン式成膜装置 | |
TWI764784B (zh) | 雙層式遮蔽構件及具有雙層式遮蔽構件的薄膜沉積機台 | |
TWI777640B (zh) | 遮蔽機構及具有遮蔽機構的薄膜沉積腔體 | |
JP4562764B2 (ja) | スパッタ装置 | |
TWI773411B (zh) | 遮蔽裝置及具有遮蔽裝置的薄膜沉積設備 | |
JP7158098B2 (ja) | 成膜装置、および、電子デバイスの製造方法 | |
TWI815135B (zh) | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 | |
TWI766741B (zh) | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 | |
TWI788032B (zh) | 開合式遮蔽機構及具有開合式遮蔽機構的薄膜沉積機台 | |
CN216237258U (zh) | 开合式遮蔽构件及具有开合式遮蔽构件的薄膜沉积装置 | |
TWI788035B (zh) | 用以感測遮蔽機構開合的薄膜沉積機台 | |
CN215628274U (zh) | 具有对开式遮蔽构件的沉积设备 | |
TWM620965U (zh) | 具有對開式遮蔽構件的沉積設備 | |
TWM619996U (zh) | 開合式遮蔽構件及具有開合式遮蔽構件的沉積機台 | |
TWI771083B (zh) | 具有對開式遮蔽構件的薄膜沉積設備 | |
TWM619999U (zh) | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積裝置 | |
CN216585186U (zh) | 双层式遮蔽构件及具有双层式遮蔽构件的沉积机台 | |
KR101780945B1 (ko) | 인라인 스퍼터링 시스템 | |
TWM619998U (zh) | 遮蔽裝置及具有遮蔽裝置的沉積設備 | |
TWM622583U (zh) | 開合式遮蔽構件及具有開合式遮蔽構件的薄膜沉積機台 | |
CN216237257U (zh) | 遮蔽装置及具有遮蔽装置的沉积设备 | |
TWM623015U (zh) | 雙開式遮蔽構件及具有雙開式遮蔽構件的薄膜沉積機台 | |
TWM627664U (zh) | 遮擋裝置及具有遮擋裝置的薄膜沉積機台 | |
CN115537753A (zh) | 开合式遮蔽构件及具有开合式遮蔽构件的薄膜沉积机台 | |
CN216141617U (zh) | 开合式遮蔽构件及具有开合式遮蔽构件的沉积机台 |