JP7139037B2 - チップの製造方法 - Google Patents

チップの製造方法 Download PDF

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Publication number
JP7139037B2
JP7139037B2 JP2018092366A JP2018092366A JP7139037B2 JP 7139037 B2 JP7139037 B2 JP 7139037B2 JP 2018092366 A JP2018092366 A JP 2018092366A JP 2018092366 A JP2018092366 A JP 2018092366A JP 7139037 B2 JP7139037 B2 JP 7139037B2
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JP
Japan
Prior art keywords
workpiece
modified layer
chip
holding
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018092366A
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English (en)
Japanese (ja)
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JP2019197858A5 (enExample
JP2019197858A (ja
Inventor
良彰 淀
金艶 趙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to JP2018092366A priority Critical patent/JP7139037B2/ja
Priority to CN201910366835.1A priority patent/CN110473831B/zh
Priority to KR1020190053777A priority patent/KR102682695B1/ko
Priority to TW108116043A priority patent/TW201947655A/zh
Publication of JP2019197858A publication Critical patent/JP2019197858A/ja
Publication of JP2019197858A5 publication Critical patent/JP2019197858A5/ja
Application granted granted Critical
Publication of JP7139037B2 publication Critical patent/JP7139037B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/011—Division of wafers or substrates to produce devices, each consisting of a single electric circuit element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2018092366A 2018-05-11 2018-05-11 チップの製造方法 Active JP7139037B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018092366A JP7139037B2 (ja) 2018-05-11 2018-05-11 チップの製造方法
CN201910366835.1A CN110473831B (zh) 2018-05-11 2019-05-05 芯片的制造方法
KR1020190053777A KR102682695B1 (ko) 2018-05-11 2019-05-08 칩의 제조 방법
TW108116043A TW201947655A (zh) 2018-05-11 2019-05-09 晶片的製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018092366A JP7139037B2 (ja) 2018-05-11 2018-05-11 チップの製造方法

Publications (3)

Publication Number Publication Date
JP2019197858A JP2019197858A (ja) 2019-11-14
JP2019197858A5 JP2019197858A5 (enExample) 2020-03-05
JP7139037B2 true JP7139037B2 (ja) 2022-09-20

Family

ID=68507447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018092366A Active JP7139037B2 (ja) 2018-05-11 2018-05-11 チップの製造方法

Country Status (4)

Country Link
JP (1) JP7139037B2 (enExample)
KR (1) KR102682695B1 (enExample)
CN (1) CN110473831B (enExample)
TW (1) TW201947655A (enExample)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2010125521A (ja) 2008-12-01 2010-06-10 Disco Abrasive Syst Ltd レーザ加工装置
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015061033A (ja) 2013-09-20 2015-03-30 株式会社東京精密 レーザーダイシング装置及びレーザーダイシング方法
JP2016025188A (ja) 2014-07-18 2016-02-08 株式会社ディスコ ウェーハの分割方法
JP2018052770A (ja) 2016-09-28 2018-04-05 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
TWI283023B (en) * 2005-12-23 2007-06-21 Advanced Semiconductor Eng Wafer level packaging process
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP6071775B2 (ja) * 2013-06-26 2017-02-01 株式会社ディスコ ウェーハの加工方法
JP2015207604A (ja) * 2014-04-17 2015-11-19 株式会社ディスコ ウェーハの加工方法
JP2015220383A (ja) * 2014-05-20 2015-12-07 株式会社ディスコ ウェーハの加工方法
JP6305853B2 (ja) * 2014-07-08 2018-04-04 株式会社ディスコ ウエーハの加工方法
JP6692578B2 (ja) * 2016-06-30 2020-05-13 株式会社ディスコ ウェーハの加工方法
US20180040513A1 (en) * 2016-08-05 2018-02-08 Disco Corporation Processing method for wafer
JP6821245B2 (ja) * 2016-10-11 2021-01-27 株式会社ディスコ ウェーハの加工方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
JP2010125521A (ja) 2008-12-01 2010-06-10 Disco Abrasive Syst Ltd レーザ加工装置
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP2014236034A (ja) 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015061033A (ja) 2013-09-20 2015-03-30 株式会社東京精密 レーザーダイシング装置及びレーザーダイシング方法
JP2016025188A (ja) 2014-07-18 2016-02-08 株式会社ディスコ ウェーハの分割方法
JP2018052770A (ja) 2016-09-28 2018-04-05 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置

Also Published As

Publication number Publication date
KR102682695B1 (ko) 2024-07-05
CN110473831B (zh) 2024-04-02
KR20190129737A (ko) 2019-11-20
CN110473831A (zh) 2019-11-19
JP2019197858A (ja) 2019-11-14
TW201947655A (zh) 2019-12-16

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