CN110473831B - 芯片的制造方法 - Google Patents

芯片的制造方法 Download PDF

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Publication number
CN110473831B
CN110473831B CN201910366835.1A CN201910366835A CN110473831B CN 110473831 B CN110473831 B CN 110473831B CN 201910366835 A CN201910366835 A CN 201910366835A CN 110473831 B CN110473831 B CN 110473831B
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CN
China
Prior art keywords
workpiece
chip
modified layer
laser processing
holding
Prior art date
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Active
Application number
CN201910366835.1A
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English (en)
Chinese (zh)
Other versions
CN110473831A (zh
Inventor
淀良彰
赵金艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
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Disco Corp
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Publication date
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Publication of CN110473831A publication Critical patent/CN110473831A/zh
Application granted granted Critical
Publication of CN110473831B publication Critical patent/CN110473831B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/011—Division of wafers or substrates to produce devices, each consisting of a single electric circuit element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201910366835.1A 2018-05-11 2019-05-05 芯片的制造方法 Active CN110473831B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-092366 2018-05-11
JP2018092366A JP7139037B2 (ja) 2018-05-11 2018-05-11 チップの製造方法

Publications (2)

Publication Number Publication Date
CN110473831A CN110473831A (zh) 2019-11-19
CN110473831B true CN110473831B (zh) 2024-04-02

Family

ID=68507447

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910366835.1A Active CN110473831B (zh) 2018-05-11 2019-05-05 芯片的制造方法

Country Status (4)

Country Link
JP (1) JP7139037B2 (enExample)
KR (1) KR102682695B1 (enExample)
CN (1) CN110473831B (enExample)
TW (1) TW201947655A (enExample)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
TWI283023B (en) * 2005-12-23 2007-06-21 Advanced Semiconductor Eng Wafer level packaging process
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015012015A (ja) * 2013-06-26 2015-01-19 株式会社ディスコ ウェーハの加工方法
CN105047612A (zh) * 2014-04-17 2015-11-11 株式会社迪思科 晶片的加工方法
JP2015220383A (ja) * 2014-05-20 2015-12-07 株式会社ディスコ ウェーハの加工方法
CN105261560A (zh) * 2014-07-08 2016-01-20 株式会社迪思科 晶片的加工方法
JP2018006520A (ja) * 2016-06-30 2018-01-11 株式会社ディスコ ウェーハの加工方法
CN107946242A (zh) * 2016-10-11 2018-04-20 株式会社迪思科 晶片的加工方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP5318544B2 (ja) 2008-12-01 2013-10-16 株式会社ディスコ レーザ加工装置
JP5791866B2 (ja) 2009-03-06 2015-10-07 株式会社ディスコ ワーク分割装置
JP2014199834A (ja) 2013-03-29 2014-10-23 株式会社ディスコ 保持手段及び加工方法
JP6504686B2 (ja) 2013-09-20 2019-04-24 株式会社東京精密 レーザーダイシング装置及びレーザーダイシング方法
JP6295154B2 (ja) 2014-07-18 2018-03-14 株式会社ディスコ ウェーハの分割方法
US20180040513A1 (en) * 2016-08-05 2018-02-08 Disco Corporation Processing method for wafer
JP6775822B2 (ja) 2016-09-28 2020-10-28 三星ダイヤモンド工業株式会社 脆性材料基板の分断方法並びに分断装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003088973A (ja) * 2001-09-12 2003-03-25 Hamamatsu Photonics Kk レーザ加工方法
TWI283023B (en) * 2005-12-23 2007-06-21 Advanced Semiconductor Eng Wafer level packaging process
JP2013236001A (ja) * 2012-05-10 2013-11-21 Disco Abrasive Syst Ltd 板状物の分割方法
JP2014236034A (ja) * 2013-05-31 2014-12-15 株式会社ディスコ ウェーハの加工方法
JP2015012015A (ja) * 2013-06-26 2015-01-19 株式会社ディスコ ウェーハの加工方法
CN105047612A (zh) * 2014-04-17 2015-11-11 株式会社迪思科 晶片的加工方法
JP2015220383A (ja) * 2014-05-20 2015-12-07 株式会社ディスコ ウェーハの加工方法
CN105261560A (zh) * 2014-07-08 2016-01-20 株式会社迪思科 晶片的加工方法
JP2018006520A (ja) * 2016-06-30 2018-01-11 株式会社ディスコ ウェーハの加工方法
CN107946242A (zh) * 2016-10-11 2018-04-20 株式会社迪思科 晶片的加工方法

Also Published As

Publication number Publication date
KR102682695B1 (ko) 2024-07-05
KR20190129737A (ko) 2019-11-20
CN110473831A (zh) 2019-11-19
JP2019197858A (ja) 2019-11-14
TW201947655A (zh) 2019-12-16
JP7139037B2 (ja) 2022-09-20

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