JP7132753B2 - イオン交換された基板の個片化 - Google Patents

イオン交換された基板の個片化 Download PDF

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JP7132753B2
JP7132753B2 JP2018106563A JP2018106563A JP7132753B2 JP 7132753 B2 JP7132753 B2 JP 7132753B2 JP 2018106563 A JP2018106563 A JP 2018106563A JP 2018106563 A JP2018106563 A JP 2018106563A JP 7132753 B2 JP7132753 B2 JP 7132753B2
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substrate
stress
thickness
dicing
along
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JP2019006669A (ja
JP2019006669A5 (enExample
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スコット・ジェイ・リム
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パロ アルト リサーチ センター インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C21/00—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface
    • C03C21/001—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions
    • C03C21/002—Treatment of glass, not in the form of fibres or filaments, by diffusing ions or metals in the surface in liquid phase, e.g. molten salts, solutions to perform ion-exchange between alkali ions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/57—Protection from inspection, reverse engineering or tampering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Surface Treatment Of Glass (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
JP2018106563A 2017-06-21 2018-06-04 イオン交換された基板の個片化 Active JP7132753B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/629,506 2017-06-21
US15/629,506 US10026651B1 (en) 2017-06-21 2017-06-21 Singulation of ion-exchanged substrates

Publications (3)

Publication Number Publication Date
JP2019006669A JP2019006669A (ja) 2019-01-17
JP2019006669A5 JP2019006669A5 (enExample) 2021-07-26
JP7132753B2 true JP7132753B2 (ja) 2022-09-07

Family

ID=62562955

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018106563A Active JP7132753B2 (ja) 2017-06-21 2018-06-04 イオン交換された基板の個片化

Country Status (3)

Country Link
US (1) US10026651B1 (enExample)
EP (1) EP3418263B1 (enExample)
JP (1) JP7132753B2 (enExample)

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US9780044B2 (en) 2015-04-23 2017-10-03 Palo Alto Research Center Incorporated Transient electronic device with ion-exchanged glass treated interposer
US10012250B2 (en) 2016-04-06 2018-07-03 Palo Alto Research Center Incorporated Stress-engineered frangible structures
US10224297B2 (en) 2016-07-26 2019-03-05 Palo Alto Research Center Incorporated Sensor and heater for stimulus-initiated fracture of a substrate
US10026579B2 (en) 2016-07-26 2018-07-17 Palo Alto Research Center Incorporated Self-limiting electrical triggering for initiating fracture of frangible glass
US10903173B2 (en) 2016-10-20 2021-01-26 Palo Alto Research Center Incorporated Pre-conditioned substrate
US10717669B2 (en) * 2018-05-16 2020-07-21 Palo Alto Research Center Incorporated Apparatus and method for creating crack initiation sites in a self-fracturing frangible member
US11107645B2 (en) 2018-11-29 2021-08-31 Palo Alto Research Center Incorporated Functionality change based on stress-engineered components
US10947150B2 (en) 2018-12-03 2021-03-16 Palo Alto Research Center Incorporated Decoy security based on stress-engineered substrates
US10969205B2 (en) 2019-05-03 2021-04-06 Palo Alto Research Center Incorporated Electrically-activated pressure vessels for fracturing frangible structures
US12013043B2 (en) 2020-12-21 2024-06-18 Xerox Corporation Triggerable mechanisms and fragment containment arrangements for self-destructing frangible structures and sealed vessels
US11904986B2 (en) 2020-12-21 2024-02-20 Xerox Corporation Mechanical triggers and triggering methods for self-destructing frangible structures and sealed vessels

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JP2013159505A (ja) 2012-02-02 2013-08-19 Asahi Glass Co Ltd 化学強化ガラスの製造方法及び化学強化ガラス
JP2014069995A (ja) 2012-09-28 2014-04-21 Kiso Micro Kk ガラス基板の製造方法

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CN102399052A (zh) 2010-09-15 2012-04-04 利科光学股份有限公司 预设路径的强化玻璃切割方法
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JP2014069995A (ja) 2012-09-28 2014-04-21 Kiso Micro Kk ガラス基板の製造方法

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Publication number Publication date
JP2019006669A (ja) 2019-01-17
EP3418263A1 (en) 2018-12-26
US10026651B1 (en) 2018-07-17
EP3418263B1 (en) 2022-05-25

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