JP7129307B2 - 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法 - Google Patents

基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法 Download PDF

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Publication number
JP7129307B2
JP7129307B2 JP2018191614A JP2018191614A JP7129307B2 JP 7129307 B2 JP7129307 B2 JP 7129307B2 JP 2018191614 A JP2018191614 A JP 2018191614A JP 2018191614 A JP2018191614 A JP 2018191614A JP 7129307 B2 JP7129307 B2 JP 7129307B2
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Japan
Prior art keywords
focus ring
substrate support
piezoelectric elements
piezoelectric element
support assembly
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JP2018191614A
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English (en)
Japanese (ja)
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JP2020061454A (ja
JP2020061454A5 (https=
Inventor
真史 池上
康晴 佐々木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018191614A priority Critical patent/JP7129307B2/ja
Priority to KR1020190108504A priority patent/KR102863314B1/ko
Priority to US16/564,791 priority patent/US11688587B2/en
Priority to CN201910856969.1A priority patent/CN111029237B/zh
Publication of JP2020061454A publication Critical patent/JP2020061454A/ja
Publication of JP2020061454A5 publication Critical patent/JP2020061454A5/ja
Application granted granted Critical
Publication of JP7129307B2 publication Critical patent/JP7129307B2/ja
Priority to US18/137,355 priority patent/US20230298865A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
JP2018191614A 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法 Active JP7129307B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法
KR1020190108504A KR102863314B1 (ko) 2018-10-10 2019-09-03 기판 지지 어셈블리, 플라즈마 처리 장치, 및 플라즈마 처리 방법
US16/564,791 US11688587B2 (en) 2018-10-10 2019-09-09 Substrate support assembly, plasma processing apparatus, and plasma processing method
CN201910856969.1A CN111029237B (zh) 2018-10-10 2019-09-11 基板支承组件、等离子体处理装置、以及等离子体处理方法
US18/137,355 US20230298865A1 (en) 2018-10-10 2023-04-20 Substrate support assembly, plasma processing apparatus, and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2020061454A JP2020061454A (ja) 2020-04-16
JP2020061454A5 JP2020061454A5 (https=) 2021-07-26
JP7129307B2 true JP7129307B2 (ja) 2022-09-01

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JP2018191614A Active JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法

Country Status (4)

Country Link
US (2) US11688587B2 (https=)
JP (1) JP7129307B2 (https=)
KR (1) KR102863314B1 (https=)
CN (1) CN111029237B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713073B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
JP7701239B2 (ja) * 2021-10-20 2025-07-01 株式会社ディスコ 固定具
CN114758977A (zh) * 2022-03-02 2022-07-15 艾希纳半导体科技(苏州)有限公司 一种压电式静电吸盘
CN115799034B (zh) * 2022-12-01 2024-12-17 拓荆科技股份有限公司 具有聚焦环的下电极组件及半导体沉淀设备
CN118762980B (zh) * 2024-09-04 2024-11-29 中微半导体(上海)有限公司 聚焦环的控温方法、下电极组件及等离子体处理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
US20070111339A1 (en) 2005-11-14 2007-05-17 Stephan Wege Apparatus for processing a substrate
JP2012125140A (ja) 2010-12-07 2012-06-28 Industry-Academic Cooperation Foundation Yonsei Univ 多層電気活性ポリマーデバイス及びその製造方法
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
JP2016509826A (ja) 2013-01-16 2016-03-31 バイエル・マテリアルサイエンス・アクチェンゲゼルシャフトＢａｙｅｒ ＭａｔｅｒｉａｌＳｃｉｅｎｃｅ ＡＧ 多層電気機械変換器を製造する方法

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BR9610444A (pt) * 1995-08-31 1999-02-17 Alcan Int Ltd Sondas ultra-sônicas para uso em ambientes severos
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
KR101216701B1 (ko) * 2009-11-24 2012-12-31 세메스 주식회사 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
JP4831844B1 (ja) * 2010-09-28 2011-12-07 三菱重工業株式会社 常温接合装置および常温接合方法
JP5401443B2 (ja) * 2010-12-28 2014-01-29 日東電工株式会社 有機ｅｌ素子の製造方法及び製造装置
US20130264309A1 (en) * 2012-04-05 2013-10-10 Ian J. Kenworthy Acoustic energy utilization in plasma processing
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
US20070111339A1 (en) 2005-11-14 2007-05-17 Stephan Wege Apparatus for processing a substrate
JP2012125140A (ja) 2010-12-07 2012-06-28 Industry-Academic Cooperation Foundation Yonsei Univ 多層電気活性ポリマーデバイス及びその製造方法
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
JP2016509826A (ja) 2013-01-16 2016-03-31 バイエル・マテリアルサイエンス・アクチェンゲゼルシャフトＢａｙｅｒ ＭａｔｅｒｉａｌＳｃｉｅｎｃｅ ＡＧ 多層電気機械変換器を製造する方法

Also Published As

Publication number Publication date
KR20200040659A (ko) 2020-04-20
JP2020061454A (ja) 2020-04-16
KR102863314B1 (ko) 2025-09-22
US20230298865A1 (en) 2023-09-21
US11688587B2 (en) 2023-06-27
CN111029237A (zh) 2020-04-17
CN111029237B (zh) 2024-02-20
US20200118787A1 (en) 2020-04-16

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