CN111029237B - 基板支承组件、等离子体处理装置、以及等离子体处理方法 - Google Patents

基板支承组件、等离子体处理装置、以及等离子体处理方法 Download PDF

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Publication number
CN111029237B
CN111029237B CN201910856969.1A CN201910856969A CN111029237B CN 111029237 B CN111029237 B CN 111029237B CN 201910856969 A CN201910856969 A CN 201910856969A CN 111029237 B CN111029237 B CN 111029237B
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China
Prior art keywords
piezoelectric elements
region
support assembly
substrate support
focus ring
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CN201910856969.1A
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English (en)
Chinese (zh)
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CN111029237A (zh
Inventor
池上真史
佐佐木康晴
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
CN201910856969.1A 2018-10-10 2019-09-11 基板支承组件、等离子体处理装置、以及等离子体处理方法 Active CN111029237B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-191614 2018-10-10
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法

Publications (2)

Publication Number Publication Date
CN111029237A CN111029237A (zh) 2020-04-17
CN111029237B true CN111029237B (zh) 2024-02-20

Family

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CN201910856969.1A Active CN111029237B (zh) 2018-10-10 2019-09-11 基板支承组件、等离子体处理装置、以及等离子体处理方法

Country Status (4)

Country Link
US (2) US11688587B2 (https=)
JP (1) JP7129307B2 (https=)
KR (1) KR102863314B1 (https=)
CN (1) CN111029237B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713073B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
JP7701239B2 (ja) * 2021-10-20 2025-07-01 株式会社ディスコ 固定具
CN114758977A (zh) * 2022-03-02 2022-07-15 艾希纳半导体科技(苏州)有限公司 一种压电式静电吸盘
CN115799034B (zh) * 2022-12-01 2024-12-17 拓荆科技股份有限公司 具有聚焦环的下电极组件及半导体沉淀设备
CN118762980B (zh) * 2024-09-04 2024-11-29 中微半导体(上海)有限公司 聚焦环的控温方法、下电极组件及等离子体处理装置

Citations (3)

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CN105229809A (zh) * 2013-01-16 2016-01-06 拜耳材料科学股份公司 用于生产多层机电换能器的方法
CN105810609A (zh) * 2015-01-16 2016-07-27 朗姆研究公司 半导体晶片处理期间控制边缘处理的可移动边缘耦合环
CN108630514A (zh) * 2017-03-22 2018-10-09 东京毅力科创株式会社 基板处理装置

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BR9610444A (pt) * 1995-08-31 1999-02-17 Alcan Int Ltd Sondas ultra-sônicas para uso em ambientes severos
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US7544270B2 (en) 2005-11-14 2009-06-09 Infineon Technologies Ag Apparatus for processing a substrate
JP5317424B2 (ja) * 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
KR101216701B1 (ko) * 2009-11-24 2012-12-31 세메스 주식회사 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
JP4831844B1 (ja) * 2010-09-28 2011-12-07 三菱重工業株式会社 常温接合装置および常温接合方法
KR101703281B1 (ko) * 2010-12-07 2017-02-06 삼성전자주식회사 다층 전기활성 폴리머 디바이스 및 그 제조방법
JP5401443B2 (ja) * 2010-12-28 2014-01-29 日東電工株式会社 有機ｅｌ素子の製造方法及び製造装置
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
US20130264309A1 (en) * 2012-04-05 2013-10-10 Ian J. Kenworthy Acoustic energy utilization in plasma processing
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置

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CN105229809A (zh) * 2013-01-16 2016-01-06 拜耳材料科学股份公司 用于生产多层机电换能器的方法
CN105810609A (zh) * 2015-01-16 2016-07-27 朗姆研究公司 半导体晶片处理期间控制边缘处理的可移动边缘耦合环
CN108630514A (zh) * 2017-03-22 2018-10-09 东京毅力科创株式会社 基板处理装置

Also Published As

Publication number Publication date
KR20200040659A (ko) 2020-04-20
JP7129307B2 (ja) 2022-09-01
JP2020061454A (ja) 2020-04-16
KR102863314B1 (ko) 2025-09-22
US20230298865A1 (en) 2023-09-21
US11688587B2 (en) 2023-06-27
CN111029237A (zh) 2020-04-17
US20200118787A1 (en) 2020-04-16

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