KR102863314B1 - 기판 지지 어셈블리, 플라즈마 처리 장치, 및 플라즈마 처리 방법 - Google Patents

기판 지지 어셈블리, 플라즈마 처리 장치, 및 플라즈마 처리 방법

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Publication number
KR102863314B1
KR102863314B1 KR1020190108504A KR20190108504A KR102863314B1 KR 102863314 B1 KR102863314 B1 KR 102863314B1 KR 1020190108504 A KR1020190108504 A KR 1020190108504A KR 20190108504 A KR20190108504 A KR 20190108504A KR 102863314 B1 KR102863314 B1 KR 102863314B1
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KR
South Korea
Prior art keywords
piezoelectric elements
support assembly
region
focus ring
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
KR1020190108504A
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English (en)
Korean (ko)
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KR20200040659A (ko
Inventor
마사시 이케가미
야스하루 사사키
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20200040659A publication Critical patent/KR20200040659A/ko
Application granted granted Critical
Publication of KR102863314B1 publication Critical patent/KR102863314B1/ko
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Classifications

    • H01L21/68721—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H01L21/02315—
    • H01L21/6831—
    • H01L21/68757—
    • H01L21/68785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1020190108504A 2018-10-10 2019-09-03 기판 지지 어셈블리, 플라즈마 처리 장치, 및 플라즈마 처리 방법 Active KR102863314B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018191614A JP7129307B2 (ja) 2018-10-10 2018-10-10 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法
JPJP-P-2018-191614 2018-10-10

Publications (2)

Publication Number Publication Date
KR20200040659A KR20200040659A (ko) 2020-04-20
KR102863314B1 true KR102863314B1 (ko) 2025-09-22

Family

ID=70160378

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190108504A Active KR102863314B1 (ko) 2018-10-10 2019-09-03 기판 지지 어셈블리, 플라즈마 처리 장치, 및 플라즈마 처리 방법

Country Status (4)

Country Link
US (2) US11688587B2 (https=)
JP (1) JP7129307B2 (https=)
KR (1) KR102863314B1 (https=)
CN (1) CN111029237B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112713073B (zh) * 2019-10-24 2024-03-12 中微半导体设备(上海)股份有限公司 一种耐腐蚀气体输送部件及其等离子体处理装置
JP7701239B2 (ja) * 2021-10-20 2025-07-01 株式会社ディスコ 固定具
CN114758977A (zh) * 2022-03-02 2022-07-15 艾希纳半导体科技(苏州)有限公司 一种压电式静电吸盘
CN115799034B (zh) * 2022-12-01 2024-12-17 拓荆科技股份有限公司 具有聚焦环的下电极组件及半导体沉淀设备
CN118762980B (zh) * 2024-09-04 2024-11-29 中微半导体(上海)有限公司 聚焦环的控温方法、下电极组件及等离子体处理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070111339A1 (en) * 2005-11-14 2007-05-17 Stephan Wege Apparatus for processing a substrate
JP2008244274A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置

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BR9610444A (pt) * 1995-08-31 1999-02-17 Alcan Int Ltd Sondas ultra-sônicas para uso em ambientes severos
US6363882B1 (en) * 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
KR100400044B1 (ko) * 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US7244336B2 (en) * 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
KR101216701B1 (ko) * 2009-11-24 2012-12-31 세메스 주식회사 건식 식각 장치
US8529729B2 (en) * 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
JP4831844B1 (ja) * 2010-09-28 2011-12-07 三菱重工業株式会社 常温接合装置および常温接合方法
KR101703281B1 (ko) * 2010-12-07 2017-02-06 삼성전자주식회사 다층 전기활성 폴리머 디바이스 및 그 제조방법
JP5401443B2 (ja) * 2010-12-28 2014-01-29 日東電工株式会社 有機ｅｌ素子の製造方法及び製造装置
US20130264309A1 (en) * 2012-04-05 2013-10-10 Ian J. Kenworthy Acoustic energy utilization in plasma processing
EP2946415A1 (de) * 2013-01-16 2015-11-25 Covestro Deutschland AG Verfahren zum herstellen eines mehrschichtigen elektromechanischen wandlers
JP6346855B2 (ja) * 2014-12-25 2018-06-20 東京エレクトロン株式会社 静電吸着方法及び基板処理装置
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070111339A1 (en) * 2005-11-14 2007-05-17 Stephan Wege Apparatus for processing a substrate
JP2008244274A (ja) * 2007-03-28 2008-10-09 Tokyo Electron Ltd プラズマ処理装置
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置

Also Published As

Publication number Publication date
KR20200040659A (ko) 2020-04-20
JP7129307B2 (ja) 2022-09-01
JP2020061454A (ja) 2020-04-16
US20230298865A1 (en) 2023-09-21
US11688587B2 (en) 2023-06-27
CN111029237A (zh) 2020-04-17
CN111029237B (zh) 2024-02-20
US20200118787A1 (en) 2020-04-16

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