JP7126027B2 - チャンバーシールアセンブリ及び成長炉 - Google Patents
チャンバーシールアセンブリ及び成長炉 Download PDFInfo
- Publication number
- JP7126027B2 JP7126027B2 JP2021532510A JP2021532510A JP7126027B2 JP 7126027 B2 JP7126027 B2 JP 7126027B2 JP 2021532510 A JP2021532510 A JP 2021532510A JP 2021532510 A JP2021532510 A JP 2021532510A JP 7126027 B2 JP7126027 B2 JP 7126027B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- seal
- spacer ring
- seal assembly
- exhaust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/02—Sealings between relatively-stationary surfaces
- F16J15/06—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811201774.5A CN111058093B (zh) | 2018-10-16 | 2018-10-16 | 腔室密封组件及生长炉 |
CN201811201774.5 | 2018-10-16 | ||
PCT/CN2019/105409 WO2020078147A1 (zh) | 2018-10-16 | 2019-09-11 | 腔室密封组件及生长炉 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021534071A JP2021534071A (ja) | 2021-12-09 |
JP7126027B2 true JP7126027B2 (ja) | 2022-08-25 |
Family
ID=70284454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021532510A Active JP7126027B2 (ja) | 2018-10-16 | 2019-09-11 | チャンバーシールアセンブリ及び成長炉 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7126027B2 (zh) |
CN (1) | CN111058093B (zh) |
WO (1) | WO2020078147A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114892265A (zh) * | 2022-04-13 | 2022-08-12 | 中国电子科技集团公司第四十八研究所 | 一种外延生长反应装置 |
CN115584485B (zh) * | 2022-10-11 | 2024-08-16 | 拓荆科技股份有限公司 | 一种用于薄膜沉积设备的密封结构以及反应腔室 |
CN118380356B (zh) * | 2024-06-26 | 2024-09-10 | 北京屹唐半导体科技股份有限公司 | 热反应腔室 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014069104A (ja) | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | プラズマ処理装置 |
CN107966022A (zh) | 2017-12-21 | 2018-04-27 | 宁夏昇力恒真空设备有限公司 | 法兰密封连接装置及超高真空烧结炉 |
CN207715049U (zh) | 2017-12-14 | 2018-08-10 | 核工业西南物理研究院 | 一种真空室门密封结构 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0768151A (ja) * | 1993-09-02 | 1995-03-14 | Hitachi Ltd | 真空装置 |
JPH07151312A (ja) * | 1993-11-30 | 1995-06-13 | Sanyo Electric Co Ltd | 液体燃料燃焼装置 |
JP3463785B2 (ja) * | 1997-09-22 | 2003-11-05 | 東京エレクトロン株式会社 | 封止装置および処理装置 |
JP4187073B2 (ja) * | 2004-05-07 | 2008-11-26 | 日本ピラー工業株式会社 | 回転テーブルを使用する処理装置用のシール装置 |
US9005539B2 (en) * | 2011-11-23 | 2015-04-14 | Asm Ip Holding B.V. | Chamber sealing member |
CN103628140B (zh) * | 2013-10-09 | 2016-08-17 | 东莞市天域半导体科技有限公司 | 一种超高温双层水冷石英管真空室用双密封结构 |
CN203583011U (zh) * | 2013-10-09 | 2014-05-07 | 东莞市天域半导体科技有限公司 | 一种超高温双层水冷石英管真空室用双密封结构 |
CN204849018U (zh) * | 2015-06-23 | 2015-12-09 | 中建材(内江)玻璃高新技术有限公司 | 镀膜腔室高真空密封结构 |
CN205228137U (zh) * | 2015-12-02 | 2016-05-11 | 青岛丰东热处理有限公司 | 等离子炉双密封圈真空锁紧结构 |
-
2018
- 2018-10-16 CN CN201811201774.5A patent/CN111058093B/zh active Active
-
2019
- 2019-09-11 JP JP2021532510A patent/JP7126027B2/ja active Active
- 2019-09-11 WO PCT/CN2019/105409 patent/WO2020078147A1/zh active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014069104A (ja) | 2012-09-28 | 2014-04-21 | Hitachi High-Technologies Corp | プラズマ処理装置 |
CN207715049U (zh) | 2017-12-14 | 2018-08-10 | 核工业西南物理研究院 | 一种真空室门密封结构 |
CN107966022A (zh) | 2017-12-21 | 2018-04-27 | 宁夏昇力恒真空设备有限公司 | 法兰密封连接装置及超高真空烧结炉 |
Also Published As
Publication number | Publication date |
---|---|
JP2021534071A (ja) | 2021-12-09 |
CN111058093A (zh) | 2020-04-24 |
CN111058093B (zh) | 2020-11-10 |
WO2020078147A1 (zh) | 2020-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7126027B2 (ja) | チャンバーシールアセンブリ及び成長炉 | |
CN109338333B (zh) | 一种管式lpcvd真空反应室 | |
TWI710658B (zh) | 用於SiC高溫氧化製程的製作腔室及熱處理爐 | |
CN110042370B (zh) | 一种管式pecvd设备的反应室结构 | |
CN102216656B (zh) | 用于处理室的密封装置 | |
KR20020061714A (ko) | 샤워 헤드 및 이를 포함하는 박막 형성 장비 | |
CN108085649B (zh) | 反应腔室及半导体加工设备 | |
WO2022160547A1 (zh) | 一种碳化硅外延炉反应室 | |
JP4063661B2 (ja) | 半導体製造装置及び半導体の製造法 | |
CN105020112B (zh) | 一种高热稳定的离子推力器屏栅筒 | |
CN112687513B (zh) | 半导体加工腔室 | |
CN202116643U (zh) | 衬底处理设备 | |
CN114540947B (zh) | 工艺腔室和半导体工艺设备 | |
CN110735185A (zh) | 长晶炉 | |
CN105575873B (zh) | 压环机构及半导体加工设备 | |
CN204111831U (zh) | 一种取向硅钢用高温罩式炉内罩 | |
CN110630747B (zh) | 一种真空阻隔密封结构以及安装有该密封结构的设备 | |
CN216624212U (zh) | 半导体工艺设备 | |
CN210320911U (zh) | 干燥电极芯用的干燥罐 | |
CN110319192B (zh) | 用于密封内石英管的密封结构、工艺设备及装配方法 | |
CN104195320A (zh) | 取向硅钢用高温罩式炉内罩 | |
CN206735362U (zh) | 真空吸盘 | |
JP5283001B2 (ja) | ロータリーキルンのシール構造 | |
CN115241093A (zh) | 半导体反应腔室 | |
CN109666971B (zh) | 生长炉 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220624 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220808 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220815 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7126027 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |