JP7126027B2 - チャンバーシールアセンブリ及び成長炉 - Google Patents

チャンバーシールアセンブリ及び成長炉 Download PDF

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Publication number
JP7126027B2
JP7126027B2 JP2021532510A JP2021532510A JP7126027B2 JP 7126027 B2 JP7126027 B2 JP 7126027B2 JP 2021532510 A JP2021532510 A JP 2021532510A JP 2021532510 A JP2021532510 A JP 2021532510A JP 7126027 B2 JP7126027 B2 JP 7126027B2
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Japan
Prior art keywords
chamber
seal
spacer ring
seal assembly
exhaust
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JP2021532510A
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English (en)
Japanese (ja)
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JP2021534071A (ja
Inventor
祥雷 ▲馮▼
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Publication of JP2021534071A publication Critical patent/JP2021534071A/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16J—PISTONS; CYLINDERS; SEALINGS
    • F16J15/00—Sealings
    • F16J15/02—Sealings between relatively-stationary surfaces
    • F16J15/06—Sealings between relatively-stationary surfaces with solid packing compressed between sealing surfaces

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021532510A 2018-10-16 2019-09-11 チャンバーシールアセンブリ及び成長炉 Active JP7126027B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201811201774.5A CN111058093B (zh) 2018-10-16 2018-10-16 腔室密封组件及生长炉
CN201811201774.5 2018-10-16
PCT/CN2019/105409 WO2020078147A1 (zh) 2018-10-16 2019-09-11 腔室密封组件及生长炉

Publications (2)

Publication Number Publication Date
JP2021534071A JP2021534071A (ja) 2021-12-09
JP7126027B2 true JP7126027B2 (ja) 2022-08-25

Family

ID=70284454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021532510A Active JP7126027B2 (ja) 2018-10-16 2019-09-11 チャンバーシールアセンブリ及び成長炉

Country Status (3)

Country Link
JP (1) JP7126027B2 (zh)
CN (1) CN111058093B (zh)
WO (1) WO2020078147A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114892265A (zh) * 2022-04-13 2022-08-12 中国电子科技集团公司第四十八研究所 一种外延生长反应装置
CN115584485A (zh) * 2022-10-11 2023-01-10 拓荆科技股份有限公司 一种用于薄膜沉积设备的密封结构以及反应腔室

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014069104A (ja) 2012-09-28 2014-04-21 Hitachi High-Technologies Corp プラズマ処理装置
CN107966022A (zh) 2017-12-21 2018-04-27 宁夏昇力恒真空设备有限公司 法兰密封连接装置及超高真空烧结炉
CN207715049U (zh) 2017-12-14 2018-08-10 核工业西南物理研究院 一种真空室门密封结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0768151A (ja) * 1993-09-02 1995-03-14 Hitachi Ltd 真空装置
JPH07151312A (ja) * 1993-11-30 1995-06-13 Sanyo Electric Co Ltd 液体燃料燃焼装置
JP3463785B2 (ja) * 1997-09-22 2003-11-05 東京エレクトロン株式会社 封止装置および処理装置
JP4187073B2 (ja) * 2004-05-07 2008-11-26 日本ピラー工業株式会社 回転テーブルを使用する処理装置用のシール装置
US9005539B2 (en) * 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
CN203583011U (zh) * 2013-10-09 2014-05-07 东莞市天域半导体科技有限公司 一种超高温双层水冷石英管真空室用双密封结构
CN103628140B (zh) * 2013-10-09 2016-08-17 东莞市天域半导体科技有限公司 一种超高温双层水冷石英管真空室用双密封结构
CN204849018U (zh) * 2015-06-23 2015-12-09 中建材（内江）玻璃高新技术有限公司 镀膜腔室高真空密封结构
CN205228137U (zh) * 2015-12-02 2016-05-11 青岛丰东热处理有限公司 等离子炉双密封圈真空锁紧结构

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014069104A (ja) 2012-09-28 2014-04-21 Hitachi High-Technologies Corp プラズマ処理装置
CN207715049U (zh) 2017-12-14 2018-08-10 核工业西南物理研究院 一种真空室门密封结构
CN107966022A (zh) 2017-12-21 2018-04-27 宁夏昇力恒真空设备有限公司 法兰密封连接装置及超高真空烧结炉

Also Published As

Publication number Publication date
JP2021534071A (ja) 2021-12-09
CN111058093B (zh) 2020-11-10
WO2020078147A1 (zh) 2020-04-23
CN111058093A (zh) 2020-04-24

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