JP7125427B2 - 遠隔プラズマ酸化チャンバ - Google Patents

遠隔プラズマ酸化チャンバ Download PDF

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JP7125427B2
JP7125427B2 JP2019564957A JP2019564957A JP7125427B2 JP 7125427 B2 JP7125427 B2 JP 7125427B2 JP 2019564957 A JP2019564957 A JP 2019564957A JP 2019564957 A JP2019564957 A JP 2019564957A JP 7125427 B2 JP7125427 B2 JP 7125427B2
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nozzle
cross
connector
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JP2020522132A5 (enExample
JP2020522132A (ja
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クリストファー エス． オルセン，
エリック キハラ ショウノ，
ララ ハウリルチャック，
アグス ソフィアン チャンドラ，
チャイタニヤ エー． プラサド，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
    • C23C8/10—Oxidising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Devices For Medical Bathing And Washing (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • External Artificial Organs (AREA)
JP2019564957A 2017-05-31 2018-03-27 遠隔プラズマ酸化チャンバ Active JP7125427B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762513200P 2017-05-31 2017-05-31
US62/513,200 2017-05-31
PCT/US2018/024539 WO2018222256A1 (en) 2017-05-31 2018-03-27 Remote plasma oxidation chamber

Publications (3)

Publication Number Publication Date
JP2020522132A JP2020522132A (ja) 2020-07-27
JP2020522132A5 JP2020522132A5 (enExample) 2021-05-06
JP7125427B2 true JP7125427B2 (ja) 2022-08-24

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JP2019564957A Active JP7125427B2 (ja) 2017-05-31 2018-03-27 遠隔プラズマ酸化チャンバ

Country Status (6)

Country Link
US (1) US11615944B2 (enExample)
JP (1) JP7125427B2 (enExample)
KR (2) KR102509014B1 (enExample)
CN (1) CN110612593B (enExample)
TW (1) TWI798210B (enExample)
WO (1) WO2018222256A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD882536S1 (en) * 2017-04-28 2020-04-28 Applied Materials, Inc. Plasma source liner
US10847337B2 (en) 2018-01-24 2020-11-24 Applied Materials, Inc. Side inject designs for improved radical concentrations
CN118841306A (zh) * 2018-12-20 2024-10-25 应用材料公司 用于供应改良的气流至处理腔室的处理空间的方法和设备
US20220223383A1 (en) * 2019-04-05 2022-07-14 Applied Materials, Inc. Process system with variable flow valve
KR20210094694A (ko) * 2020-01-21 2021-07-30 삼성전자주식회사 기판 처리 장치, 물질막 증착 장치, 및 상압 화학 기상 증착 장치
WO2022020639A1 (en) * 2020-07-24 2022-01-27 Lam Research Corporation Showerhead with reduced interior volumes
KR102522687B1 (ko) * 2020-10-20 2023-04-18 에이피시스템 주식회사 박막 제조 장치
TWI876185B (zh) * 2022-07-14 2025-03-11 美商應用材料股份有限公司 對稱半導體處理腔室

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118799A (ja) 1999-10-22 2001-04-27 Matsushita Electric Ind Co Ltd ガスの導入と流れの制御方法およびその装置
JP2002151486A (ja) 2000-10-30 2002-05-24 Applied Materials Inc 基体処理方法及び装置並びに基体処理装置の運転方法
US20020073925A1 (en) 1999-04-22 2002-06-20 David B. Noble Apparatus and method for exposing a substrate to plasma radicals
JP2002217187A (ja) 2001-01-18 2002-08-02 Tokyo Electron Ltd プラズマ装置及びプラズマ生成方法
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
JP2007157885A (ja) 2005-12-02 2007-06-21 Mitsui Eng & Shipbuild Co Ltd 原料ガス供給装置
JP2008091938A (ja) 1996-07-15 2008-04-17 Applied Materials Inc プロセスキット、ウェハ処理装置及びプロセスキットの加熱方法
US20090110826A1 (en) 2007-10-25 2009-04-30 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
JP2012089863A (ja) 2005-01-18 2012-05-10 Asm America Inc 薄膜成長用反応装置
WO2013051248A1 (ja) 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
US20130168377A1 (en) 2011-12-29 2013-07-04 Stmicroelectronics Pte Ltd. Adapter for coupling a diffusion furnace system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729827A (ja) 1993-07-13 1995-01-31 Kawasaki Steel Corp 半導体基板の製造方法および装置
US5620523A (en) * 1994-04-11 1997-04-15 Canon Sales Co., Inc. Apparatus for forming film
US5935334A (en) * 1996-11-13 1999-08-10 Applied Materials, Inc. Substrate processing apparatus with bottom-mounted remote plasma system
US6576564B2 (en) * 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
EP1310466A3 (en) * 2001-11-13 2003-10-22 Tosoh Corporation Quartz glass parts, ceramic parts and process of producing those
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US20050221618A1 (en) * 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
JP4572100B2 (ja) * 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
KR101864132B1 (ko) 2010-10-05 2018-07-13 에바텍 아크티엔게젤샤프트 폴리머 기판의 진공 처리를 위한 현장 컨디셔닝
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
KR102376982B1 (ko) 2015-04-14 2022-03-21 삼성전자주식회사 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치
KR101692697B1 (ko) 2015-04-21 2017-01-04 (주)뉴젠텍 정렬 키 구조의 원격 플라즈마 소스 블록

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008091938A (ja) 1996-07-15 2008-04-17 Applied Materials Inc プロセスキット、ウェハ処理装置及びプロセスキットの加熱方法
US20020073925A1 (en) 1999-04-22 2002-06-20 David B. Noble Apparatus and method for exposing a substrate to plasma radicals
JP2001118799A (ja) 1999-10-22 2001-04-27 Matsushita Electric Ind Co Ltd ガスの導入と流れの制御方法およびその装置
JP2002151486A (ja) 2000-10-30 2002-05-24 Applied Materials Inc 基体処理方法及び装置並びに基体処理装置の運転方法
JP2002217187A (ja) 2001-01-18 2002-08-02 Tokyo Electron Ltd プラズマ装置及びプラズマ生成方法
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
JP2012089863A (ja) 2005-01-18 2012-05-10 Asm America Inc 薄膜成長用反応装置
JP2007157885A (ja) 2005-12-02 2007-06-21 Mitsui Eng & Shipbuild Co Ltd 原料ガス供給装置
US20090110826A1 (en) 2007-10-25 2009-04-30 Asm America, Inc. Reaction apparatus having multiple adjustable exhaust ports
WO2013051248A1 (ja) 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
US20130168377A1 (en) 2011-12-29 2013-07-04 Stmicroelectronics Pte Ltd. Adapter for coupling a diffusion furnace system

Also Published As

Publication number Publication date
KR20230047477A (ko) 2023-04-07
CN110612593B (zh) 2022-09-13
TW201907044A (zh) 2019-02-16
US20180347045A1 (en) 2018-12-06
US11615944B2 (en) 2023-03-28
KR20200003426A (ko) 2020-01-09
TWI798210B (zh) 2023-04-11
JP2020522132A (ja) 2020-07-27
KR102509014B1 (ko) 2023-03-13
WO2018222256A1 (en) 2018-12-06
CN110612593A (zh) 2019-12-24

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