JP7114244B2 - 光検出装置、光検出システム、及び移動体 - Google Patents

光検出装置、光検出システム、及び移動体 Download PDF

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Publication number
JP7114244B2
JP7114244B2 JP2017230987A JP2017230987A JP7114244B2 JP 7114244 B2 JP7114244 B2 JP 7114244B2 JP 2017230987 A JP2017230987 A JP 2017230987A JP 2017230987 A JP2017230987 A JP 2017230987A JP 7114244 B2 JP7114244 B2 JP 7114244B2
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semiconductor region
type semiconductor
region
conductivity type
semiconductor
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Japanese (ja)
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JP2019102618A (ja
JP2019102618A5 (enExample
Inventor
旬史 岩田
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Canon Inc
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Canon Inc
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Priority to JP2017230987A priority Critical patent/JP7114244B2/ja
Priority to US16/203,251 priority patent/US10971644B2/en
Publication of JP2019102618A publication Critical patent/JP2019102618A/ja
Publication of JP2019102618A5 publication Critical patent/JP2019102618A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • G01S7/4866—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak by fitting a model or function to the received signal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/46—Indirect determination of position data
    • G01S17/48—Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
    • G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4861—Circuits for detection, sampling, integration or read-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/959—Circuit arrangements for devices having potential barriers for devices working in avalanche mode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60W—CONJOINT CONTROL OF VEHICLE SUB-UNITS OF DIFFERENT TYPE OR DIFFERENT FUNCTION; CONTROL SYSTEMS SPECIALLY ADAPTED FOR HYBRID VEHICLES; ROAD VEHICLE DRIVE CONTROL SYSTEMS FOR PURPOSES NOT RELATED TO THE CONTROL OF A PARTICULAR SUB-UNIT
    • B60W2420/00—Indexing codes relating to the type of sensors based on the principle of their operation
    • B60W2420/40—Photo, light or radio wave sensitive means, e.g. infrared sensors
    • B60W2420/403—Image sensing, e.g. optical camera

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017230987A 2017-11-30 2017-11-30 光検出装置、光検出システム、及び移動体 Active JP7114244B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017230987A JP7114244B2 (ja) 2017-11-30 2017-11-30 光検出装置、光検出システム、及び移動体
US16/203,251 US10971644B2 (en) 2017-11-30 2018-11-28 Photodetection device, photodetection system, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017230987A JP7114244B2 (ja) 2017-11-30 2017-11-30 光検出装置、光検出システム、及び移動体

Publications (3)

Publication Number Publication Date
JP2019102618A JP2019102618A (ja) 2019-06-24
JP2019102618A5 JP2019102618A5 (enExample) 2021-01-14
JP7114244B2 true JP7114244B2 (ja) 2022-08-08

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US (1) US10971644B2 (enExample)
JP (1) JP7114244B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体
JP7182978B2 (ja) * 2018-09-28 2022-12-05 キヤノン株式会社 光検出装置、光検出システム
TWI890397B (zh) 2019-02-21 2025-07-11 日商索尼半導體解決方案公司 崩潰光二極體感測器及測距裝置
JP7422451B2 (ja) * 2019-07-19 2024-01-26 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7638664B2 (ja) * 2020-01-31 2025-03-04 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US11316063B2 (en) * 2020-03-13 2022-04-26 Globalfoundries Singapore Pte. Ltd. Diode devices and methods of forming a diode device
JP7653793B2 (ja) * 2021-01-22 2025-03-31 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP2023099395A (ja) * 2022-01-01 2023-07-13 キヤノン株式会社 光電変換装置、光電変換システム、および機器
US11967664B2 (en) * 2022-04-20 2024-04-23 Globalfoundries Singapore Pte. Ltd. Photodiodes with serpentine shaped electrical junction

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050258449A1 (en) 2004-05-10 2005-11-24 Gerhard Lutz Avalanche radiation detector
US20130099091A1 (en) 2011-09-19 2013-04-25 Yael Nemirovsky Device having an avalanche photo diode and a method for sensing photons
JP2016009691A (ja) 2014-06-20 2016-01-18 国立大学法人静岡大学 電磁波検出素子及び固体撮像装置
JP2017112169A (ja) 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
US20170186798A1 (en) 2015-12-28 2017-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked spad image sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
JP6697636B2 (ja) * 2016-09-20 2020-05-20 イノヴィズ テクノロジーズ リミテッド Ｌｉｄａｒシステム及び方法
EP3309847B1 (en) 2016-10-13 2024-06-05 Canon Kabushiki Kaisha Photo-detection apparatus and photo-detection system
US10312275B2 (en) * 2017-04-25 2019-06-04 Semiconductor Components Industries, Llc Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050258449A1 (en) 2004-05-10 2005-11-24 Gerhard Lutz Avalanche radiation detector
US20130099091A1 (en) 2011-09-19 2013-04-25 Yael Nemirovsky Device having an avalanche photo diode and a method for sensing photons
JP2016009691A (ja) 2014-06-20 2016-01-18 国立大学法人静岡大学 電磁波検出素子及び固体撮像装置
JP2017112169A (ja) 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
US20170186798A1 (en) 2015-12-28 2017-06-29 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked spad image sensor

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US20200028018A1 (en) 2020-01-23
US10971644B2 (en) 2021-04-06
JP2019102618A (ja) 2019-06-24

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