JP2019102618A5 - - Google Patents

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Publication number
JP2019102618A5
JP2019102618A5 JP2017230987A JP2017230987A JP2019102618A5 JP 2019102618 A5 JP2019102618 A5 JP 2019102618A5 JP 2017230987 A JP2017230987 A JP 2017230987A JP 2017230987 A JP2017230987 A JP 2017230987A JP 2019102618 A5 JP2019102618 A5 JP 2019102618A5
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JP
Japan
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semiconductor region
conductive type
semiconductor
depth
photodetector
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JP2017230987A
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English (en)
Japanese (ja)
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JP2019102618A (ja
JP7114244B2 (ja
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Priority to JP2017230987A priority Critical patent/JP7114244B2/ja
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Priority to US16/203,251 priority patent/US10971644B2/en
Publication of JP2019102618A publication Critical patent/JP2019102618A/ja
Publication of JP2019102618A5 publication Critical patent/JP2019102618A5/ja
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JP2017230987A 2017-11-30 2017-11-30 光検出装置、光検出システム、及び移動体 Active JP7114244B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017230987A JP7114244B2 (ja) 2017-11-30 2017-11-30 光検出装置、光検出システム、及び移動体
US16/203,251 US10971644B2 (en) 2017-11-30 2018-11-28 Photodetection device, photodetection system, and moving body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017230987A JP7114244B2 (ja) 2017-11-30 2017-11-30 光検出装置、光検出システム、及び移動体

Publications (3)

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JP2019102618A JP2019102618A (ja) 2019-06-24
JP2019102618A5 true JP2019102618A5 (enExample) 2021-01-14
JP7114244B2 JP7114244B2 (ja) 2022-08-08

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US (1) US10971644B2 (enExample)
JP (1) JP7114244B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7129199B2 (ja) * 2018-04-11 2022-09-01 キヤノン株式会社 光検出装置、光検出システム及び移動体
JP7182978B2 (ja) * 2018-09-28 2022-12-05 キヤノン株式会社 光検出装置、光検出システム
CN119698094A (zh) 2019-02-21 2025-03-25 索尼半导体解决方案公司 光检测装置和测距装置
JP7422451B2 (ja) 2019-07-19 2024-01-26 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
JP7638664B2 (ja) * 2020-01-31 2025-03-04 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US11316063B2 (en) * 2020-03-13 2022-04-26 Globalfoundries Singapore Pte. Ltd. Diode devices and methods of forming a diode device
JP7653793B2 (ja) * 2021-01-22 2025-03-31 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP7799488B2 (ja) * 2022-01-01 2026-01-15 キヤノン株式会社 光電変換装置、光電変換システム、および機器
US11967664B2 (en) * 2022-04-20 2024-04-23 Globalfoundries Singapore Pte. Ltd. Photodiodes with serpentine shaped electrical junction
JP2023178686A (ja) * 2022-06-06 2023-12-18 キヤノン株式会社 光電変換装置、光電変換システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004022948B4 (de) 2004-05-10 2006-06-01 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Avalanche-Strahlungsdetektor
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
US8779543B2 (en) 2011-09-19 2014-07-15 Technion Research And Development Foundation Ltd. Device having an avalanche photo diode and a method for sensing photons
JP6351097B2 (ja) 2014-06-20 2018-07-04 国立大学法人静岡大学 電磁波検出素子及び固体撮像装置
JP2017112169A (ja) 2015-12-15 2017-06-22 ソニー株式会社 イメージセンサ、撮像システム及びイメージセンサの製造方法
US10014340B2 (en) 2015-12-28 2018-07-03 Taiwan Semiconductor Manufacturing Co., Ltd. Stacked SPAD image sensor
WO2018055449A2 (en) * 2016-09-20 2018-03-29 Innoviz Technologies Ltd. Lidar systems and methods
EP3309847B1 (en) 2016-10-13 2024-06-05 Canon Kabushiki Kaisha Photo-detection apparatus and photo-detection system
US10312275B2 (en) * 2017-04-25 2019-06-04 Semiconductor Components Industries, Llc Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities

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