JP7106608B2 - マーク検出装置、アライメント装置、成膜装置、マーク検出方法、および、成膜方法 - Google Patents

マーク検出装置、アライメント装置、成膜装置、マーク検出方法、および、成膜方法 Download PDF

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JP7106608B2
JP7106608B2 JP2020142333A JP2020142333A JP7106608B2 JP 7106608 B2 JP7106608 B2 JP 7106608B2 JP 2020142333 A JP2020142333 A JP 2020142333A JP 2020142333 A JP2020142333 A JP 2020142333A JP 7106608 B2 JP7106608 B2 JP 7106608B2
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JP2022038048A (ja
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寛 神田
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2020142333A priority Critical patent/JP7106608B2/ja
Priority to KR1020210110062A priority patent/KR102508236B1/ko
Priority to CN202110971519.4A priority patent/CN114107933B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
JP2020142333A 2020-08-26 2020-08-26 マーク検出装置、アライメント装置、成膜装置、マーク検出方法、および、成膜方法 Active JP7106608B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2020142333A JP7106608B2 (ja) 2020-08-26 2020-08-26 マーク検出装置、アライメント装置、成膜装置、マーク検出方法、および、成膜方法
KR1020210110062A KR102508236B1 (ko) 2020-08-26 2021-08-20 마크 검출 장치, 얼라인먼트 장치, 성막 장치, 마크 검출 방법, 및, 성막 방법
CN202110971519.4A CN114107933B (zh) 2020-08-26 2021-08-24 标记检测装置、对准装置、成膜装置、标记检测方法以及成膜方法

Applications Claiming Priority (1)

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JP2020142333A JP7106608B2 (ja) 2020-08-26 2020-08-26 マーク検出装置、アライメント装置、成膜装置、マーク検出方法、および、成膜方法

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JP2022038048A JP2022038048A (ja) 2022-03-10
JP7106608B2 true JP7106608B2 (ja) 2022-07-26

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KR (1) KR102508236B1 (zh)
CN (1) CN114107933B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024014178A1 (ja) * 2022-07-11 2024-01-18 富士フイルム株式会社 撮影用治具及び情報処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028664A (ja) 2010-07-27 2012-02-09 Renesas Electronics Corp 半導体装置の製造方法
JP2013084407A (ja) 2011-10-07 2013-05-09 Panasonic Corp プラズマディスプレイパネル
JP2014071315A (ja) 2012-09-28 2014-04-21 Hitachi High-Technologies Corp アライメントマーク検出装置、プロキシミティ露光装置、及び基板のアライメント方法
JP2014121727A (ja) 2012-12-21 2014-07-03 Mitsubishi Materials Corp レーザ加工装置
JP2019039072A (ja) 2017-08-25 2019-03-14 キヤノントッキ株式会社 アライメント方法、アライメント装置、これを含む真空蒸着方法及び真空蒸着装置

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
JPH08304810A (ja) * 1995-05-02 1996-11-22 Sony Corp スクリーン印刷方法
KR100801665B1 (ko) * 2006-12-24 2008-02-11 한국생산기술연구원 얼라인 마크 인식 머신 비전 시스템 및 얼라인 마크 인식방법
JP2009076227A (ja) * 2007-09-19 2009-04-09 Seiko Epson Corp マスクの製造方法及びマスク
JP6127834B2 (ja) * 2013-08-27 2017-05-17 トヨタ自動車株式会社 アライメント方法及びパターニング用マスク
CN106884151A (zh) * 2015-12-16 2017-06-23 上海新微技术研发中心有限公司 一种基片对准装置，基片对准方法和物理气相沉积方法
CN107256839A (zh) * 2017-05-22 2017-10-17 深圳市华星光电技术有限公司 一种掩膜板及显示面板蒸镀用对位检测系统
JP6461235B2 (ja) * 2017-05-22 2019-01-30 キヤノントッキ株式会社 基板載置装置、成膜装置、基板載置方法、成膜方法、および電子デバイスの製造方法
JP6584567B1 (ja) 2018-03-30 2019-10-02 キヤノン株式会社 リソグラフィ装置、パターン形成方法及び物品の製造方法
KR102405438B1 (ko) * 2018-06-25 2022-06-03 캐논 톡키 가부시키가이샤 마스크 위치조정장치, 성막장치, 마스크 위치조정방법, 성막방법, 및 전자디바이스의 제조방법
KR20200049034A (ko) * 2018-10-31 2020-05-08 캐논 톡키 가부시키가이샤 얼라인먼트 시스템, 성막 장치, 얼라인먼트 방법, 성막 방법 및 전자 디바이스의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012028664A (ja) 2010-07-27 2012-02-09 Renesas Electronics Corp 半導体装置の製造方法
JP2013084407A (ja) 2011-10-07 2013-05-09 Panasonic Corp プラズマディスプレイパネル
JP2014071315A (ja) 2012-09-28 2014-04-21 Hitachi High-Technologies Corp アライメントマーク検出装置、プロキシミティ露光装置、及び基板のアライメント方法
JP2014121727A (ja) 2012-12-21 2014-07-03 Mitsubishi Materials Corp レーザ加工装置
JP2019039072A (ja) 2017-08-25 2019-03-14 キヤノントッキ株式会社 アライメント方法、アライメント装置、これを含む真空蒸着方法及び真空蒸着装置

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KR102508236B1 (ko) 2023-03-08
CN114107933B (zh) 2023-06-30
KR20220027023A (ko) 2022-03-07
CN114107933A (zh) 2022-03-01
JP2022038048A (ja) 2022-03-10

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