JP7079736B2 - セラミック基板及びその製造方法 - Google Patents
セラミック基板及びその製造方法 Download PDFInfo
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- JP7079736B2 JP7079736B2 JP2018564923A JP2018564923A JP7079736B2 JP 7079736 B2 JP7079736 B2 JP 7079736B2 JP 2018564923 A JP2018564923 A JP 2018564923A JP 2018564923 A JP2018564923 A JP 2018564923A JP 7079736 B2 JP7079736 B2 JP 7079736B2
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- 239000000919 ceramic Substances 0.000 title claims description 319
- 239000000758 substrate Substances 0.000 title claims description 222
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 329
- 239000002184 metal Substances 0.000 claims description 329
- 239000000463 material Substances 0.000 claims description 106
- 238000005530 etching Methods 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 26
- 230000002093 peripheral effect Effects 0.000 claims description 26
- 238000005219 brazing Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 239000000843 powder Substances 0.000 description 12
- 238000000926 separation method Methods 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 238000005304 joining Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- 229910010165 TiCu Inorganic materials 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910016525 CuMo Inorganic materials 0.000 description 2
- 229910005805 NiNb Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910001000 nickel titanium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0296—Conductive pattern lay-out details not covered by sub groups H05K1/02 - H05K1/0295
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- H—ELECTRICITY
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/381—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/068—Thermal details wherein the coefficient of thermal expansion is important
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09827—Tapered, e.g. tapered hole, via or groove
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0346—Deburring, rounding, bevelling or smoothing conductor edges
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
- H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
- H05K2203/0789—Aqueous acid solution, e.g. for cleaning or etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0079—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
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- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
Description
本出願は、2016年6月21日付の韓国特許出願第10-2016-0077297号、2016年8月30日付の韓国特許出願第10-2016-0111098号、及び2016年10月15日付の韓国特許出願第10-2016-0128623号に基づく優先権の利益を主張し、当該韓国特許出願の文献に開示されたすべての内容は本明細書の一部として含まれる。
Claims (17)
- セラミック基材と、
前記セラミック基材の少なくとも一面に接合される金属層と、
を含むセラミック基板であって、
前記金属層は外周に傾斜突出部が形成され、
前記傾斜突出部は、前記金属層の外周に連結され、前記セラミック基板と直交する仮想線よりも前記セラミック基材の外周方向に突出し、
前記傾斜突出部は、前記セラミック基材の方向に行くほど、突出長さが増加し、
前記傾斜突出部は、各々が前記セラミック基材の方向に凹な形状である複数の凹部と、前記複数の凹部のうち隣り合う凹部が接する部分に尖った突出部とを有する多段突出部を含む、セラミック基板。 - 前記金属層はろう付けによって前記セラミック基材の一面に接合される、請求項1に記載のセラミック基板。
- 前記セラミック基材と前記金属層との間に介在して前記セラミック基材と前記金属層とを接合させる接合層をさらに含む、請求項1に記載のセラミック基板。
- 前記傾斜突出部は、前記セラミック基材の外周方向に突出した長さが前記金属層の厚さよりも短い長さに形成される、請求項1に記載のセラミック基板。
- 前記傾斜突出部は、テーパー突出部をさらに含み、
前記テーパー突出部が形成された前記金属層の外周と他の金属層との間隔は、前記多段突出部が形成された前記金属層の外周と他の金属層との間隔よりも狭いことを特徴とする、請求項1に記載のセラミック基板。 - 前記金属層は、他の金属層との間隔が最大設定間隔を超える場合には、前記他の金属層と隣接する外周に前記多段突出部が形成される、請求項1に記載のセラミック基板。
- 前記金属層は、他の金属層との間隔が最小設定間隔未満である場合には、前記他の金属層と隣接する外周に前記テーパー突出部が形成される、請求項5に記載のセラミック基板。
- 前記金属層は、他の金属層との間隔が最小設定間隔以上、最大設定間隔以下である場合には、前記他の金属層と隣接する外周に前記テーパー突出部または前記多段突出部が形成される、請求項5に記載のセラミック基板。
- 前記金属層は、
前記他の金属層に前記テーパー突出部が形成されると、前記他の金属層と隣接する外周に前記多段突出部が形成され、
前記他の金属層に前記多段突出部が形成されると、前記他の金属層と隣接する外周に前記テーパー突出部が形成される、請求項8に記載のセラミック基板。 - 前記多段突出部は、
前記金属層の外周における、ストレスが集中する一部の領域に形成される、請求項1に記載のセラミック基板。 - 前記多段突出部は、
前記金属層の短辺、エッジ及び頂点のうちの少なくとも一つに形成される、請求項10に記載のセラミック基板。 - 前記多段突出部は、
前記セラミック基材に対して27°以上33°以下の傾斜度を有し、
前記傾斜度は、前記多段突出部が前記セラミック基材と接する点と凹部同士の間に形成される突出部の頂点とを結んだ線と、前記セラミック基材の表面との間の角度である、請求項10に記載のセラミック基板。 - 前記傾斜突出部は、前記金属層の他の外周に形成されるテーパー突出部をさらに含む、請求項10に記載のセラミック基板。
- 前記テーパー突出部は、前記セラミック基材に対して27°以上33°以下の傾斜度を有し、
前記傾斜度は、前記テーパー突出部が前記金属層及び前記セラミック基材と接する2つの点を結んだ線と、前記セラミック基材の表面との間の角度である、請求項13に記載のセラミック基板。 - セラミック基材を準備する段階と、
前記セラミック基材の少なくとも一面に金属層を形成する段階と、
前記金属層の一面にマスクを形成する段階と、
前記マスクによって露出された前記金属層の一部をエッチングして傾斜突出部を形成する段階と、
を含む、セラミック基板の製造方法であって、
前記傾斜突出部を形成する段階は、
前記金属層の外周に連結され、前記セラミック基板と直交する仮想線よりも前記セラミック基材の外周方向に突出する傾斜突出部を形成する段階を含み、
前記傾斜突出部を形成する段階は、
各々が前記セラミック基材の方向に凹な形状である複数の凹部と、前記複数の凹部のうち隣り合う凹部が互いに接する部分に尖った突出部とを有する多段突出部を形成する段階を含む、セラミック基板の製造方法。 - 前記マスクを形成する段階で、互いに離隔した複数のマスクを使用し、
前記傾斜突出部を形成する段階で、テーパー突出部及び前記多段突出部を備える傾斜突出部が形成され、
前記テーパー突出部が形成された前記金属層の外周と他の金属層との間隔は、前記多段突出部が形成された前記金属層の外周と他の金属層との間隔よりも狭い、請求項15に記載のセラミック基板の製造方法。 - 前記傾斜突出部を形成する段階は、
前記金属層の外周における、ストレスが集中する一部の領域に前記多段突出部を形成する段階を含み、
前記多段突出部を形成する段階は、前記セラミック基材に対して27°以上33°以下の傾斜度を有する多段突出部を形成する段階を含み、
前記傾斜度は、前記多段突出部が前記セラミック基材と接する点と凹部同士の間に形成される突出部の頂点とを結んだ線と、前記セラミック基材の表面との間の角度である、請求項15に記載のセラミック基板の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0077297 | 2016-06-21 | ||
KR1020160077297A KR101947481B1 (ko) | 2016-06-21 | 2016-06-21 | 세라믹 기판 및 그 제조방법 |
KR10-2016-0111098 | 2016-08-30 | ||
KR1020160111098A KR102031727B1 (ko) | 2016-08-30 | 2016-08-30 | 세라믹 기판 및 그 제조방법 |
KR1020160128623A KR101947482B1 (ko) | 2016-10-05 | 2016-10-05 | 세라믹 기판 및 세라믹 기판 제조 방법 |
KR10-2016-0128623 | 2016-10-05 | ||
PCT/KR2017/006207 WO2017222235A1 (ko) | 2016-06-21 | 2017-06-14 | 세라믹 기판 및 그 제조방법 |
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JP2019520297A JP2019520297A (ja) | 2019-07-18 |
JP7079736B2 true JP7079736B2 (ja) | 2022-06-02 |
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EP (1) | EP3474643A4 (ja) |
JP (1) | JP7079736B2 (ja) |
CN (1) | CN109417854B (ja) |
WO (1) | WO2017222235A1 (ja) |
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DE102018101750A1 (de) * | 2018-01-26 | 2019-08-01 | Rogers Germany Gmbh | Verbundkeramik für eine Leiterplatte und Verfahren zu deren Herstellung |
WO2019221174A1 (ja) * | 2018-05-16 | 2019-11-21 | 株式会社 東芝 | セラミックス銅回路基板およびその製造方法 |
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CN109417854B (zh) | 2021-04-27 |
JP2019520297A (ja) | 2019-07-18 |
CN109417854A (zh) | 2019-03-01 |
EP3474643A4 (en) | 2019-07-03 |
US20200315003A1 (en) | 2020-10-01 |
US11291113B2 (en) | 2022-03-29 |
EP3474643A1 (en) | 2019-04-24 |
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