JP7076570B2 - 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 - Google Patents

感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 Download PDF

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JP7076570B2
JP7076570B2 JP2020548585A JP2020548585A JP7076570B2 JP 7076570 B2 JP7076570 B2 JP 7076570B2 JP 2020548585 A JP2020548585 A JP 2020548585A JP 2020548585 A JP2020548585 A JP 2020548585A JP 7076570 B2 JP7076570 B2 JP 7076570B2
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JPWO2020066824A1 (ja
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健志 川端
研由 後藤
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Fujifilm Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2020548585A 2018-09-25 2019-09-19 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 Active JP7076570B2 (ja)

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JP2018179370 2018-09-25
JP2018179370 2018-09-25
PCT/JP2019/036708 WO2020066824A1 (ja) 2018-09-25 2019-09-19 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法

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JPWO2020066824A1 JPWO2020066824A1 (ja) 2021-08-30
JP7076570B2 true JP7076570B2 (ja) 2022-05-27

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JP (1) JP7076570B2 (zh)
TW (1) TW202024789A (zh)
WO (1) WO2020066824A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4166582A4 (en) 2020-06-10 2024-01-03 Fujifilm Corp ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICES
KR20230009932A (ko) 2020-06-10 2023-01-17 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법, 화합물
JPWO2022158323A1 (zh) 2021-01-22 2022-07-28
CN112920314A (zh) * 2021-01-26 2021-06-08 宁波南大光电材料有限公司 一种酸活性树脂以及光刻胶
EP4293011A1 (en) 2021-02-15 2023-12-20 FUJIFILM Corporation Actinic light-sensitive or radiation-sensitive resin composition, resist film, pattern formation method, and method for producing electronic devices
EP4317217A1 (en) 2021-03-29 2024-02-07 FUJIFILM Corporation Active light-sensitive or radiation-sensitive resin composition, resist film, method for forming pattern, and method for producing electronic device
EP4324822A1 (en) 2021-04-16 2024-02-21 FUJIFILM Corporation Active light-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, method for producing electronic device, and compound
JPWO2023286764A1 (zh) 2021-07-14 2023-01-19
KR20240021282A (ko) 2021-07-14 2024-02-16 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
EP4372014A1 (en) 2021-07-14 2024-05-22 FUJIFILM Corporation Pattern formation method and method for producing electronic device
KR20240036064A (ko) 2021-08-25 2024-03-19 후지필름 가부시키가이샤 약액, 패턴 형성 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011203644A (ja) 2010-03-26 2011-10-13 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP2015194703A (ja) 2014-03-19 2015-11-05 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物
JP2018059992A (ja) 2016-10-03 2018-04-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
WO2018101339A1 (ja) 2016-12-01 2018-06-07 Jsr株式会社 感放射線性樹脂組成物、オニウム塩化合物及びレジストパターンの形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011203644A (ja) 2010-03-26 2011-10-13 Fujifilm Corp 感活性光線性又は感放射線性樹脂組成物、及びそれを用いたパターン形成方法
JP2015194703A (ja) 2014-03-19 2015-11-05 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、感放射線性酸発生剤及び化合物
JP2018059992A (ja) 2016-10-03 2018-04-12 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
WO2018101339A1 (ja) 2016-12-01 2018-06-07 Jsr株式会社 感放射線性樹脂組成物、オニウム塩化合物及びレジストパターンの形成方法

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WO2020066824A1 (ja) 2020-04-02
TW202024789A (zh) 2020-07-01

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