JP7073349B2 - 広範囲にわたる温度制御のためのヒータペデスタルアセンブリ - Google Patents

広範囲にわたる温度制御のためのヒータペデスタルアセンブリ Download PDF

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JP7073349B2
JP7073349B2 JP2019515489A JP2019515489A JP7073349B2 JP 7073349 B2 JP7073349 B2 JP 7073349B2 JP 2019515489 A JP2019515489 A JP 2019515489A JP 2019515489 A JP2019515489 A JP 2019515489A JP 7073349 B2 JP7073349 B2 JP 7073349B2
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Prior art keywords
pedestal assembly
pedestal
substrate
support member
shaft
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English (en)
Japanese (ja)
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JP2019533306A (ja
JP2019533306A5 (enExample
Inventor
カウシィク アラヤヴァリ，
アジト バラクリシュナ，
サンジーヴ バルジャ，
アミット クマール バンサル，
マシュー ジェームズ ブッシェ，
フアン カルロス ロチャ－アルヴァレス，
スワミナサン ティー． スリニバサン，
テジャス ウラヴィ，
チェンホア チョウ，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2019533306A5 publication Critical patent/JP2019533306A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2019515489A 2016-09-22 2017-09-13 広範囲にわたる温度制御のためのヒータペデスタルアセンブリ Active JP7073349B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662398310P 2016-09-22 2016-09-22
US62/398,310 2016-09-22
PCT/US2017/051373 WO2018057369A1 (en) 2016-09-22 2017-09-13 Heater pedestal assembly for wide range temperature control

Publications (3)

Publication Number Publication Date
JP2019533306A JP2019533306A (ja) 2019-11-14
JP2019533306A5 JP2019533306A5 (enExample) 2020-10-22
JP7073349B2 true JP7073349B2 (ja) 2022-05-23

Family

ID=61621254

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Application Number Title Priority Date Filing Date
JP2019515489A Active JP7073349B2 (ja) 2016-09-22 2017-09-13 広範囲にわたる温度制御のためのヒータペデスタルアセンブリ

Country Status (6)

Country Link
US (1) US10910238B2 (enExample)
JP (1) JP7073349B2 (enExample)
KR (1) KR102236934B1 (enExample)
CN (1) CN109716497B (enExample)
TW (2) TWI671851B (enExample)
WO (1) WO2018057369A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106607320B (zh) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 适用于柔性基板的热真空干燥装置
KR102460313B1 (ko) * 2018-12-13 2022-10-28 주식회사 원익아이피에스 기판 처리 장치의 서셉터 및 기판 처리 장치
TWI811307B (zh) * 2019-03-12 2023-08-11 鴻創應用科技有限公司 陶瓷電路複合結構及其製造方法
US12420314B2 (en) * 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method
US11515176B2 (en) * 2020-04-14 2022-11-29 Applied Materials, Inc. Thermally controlled lid stack components
US20220028710A1 (en) * 2020-07-21 2022-01-27 Applied Materials, Inc. Distribution components for semiconductor processing systems
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
JP7490508B2 (ja) * 2020-09-09 2024-05-27 日本電子株式会社 三次元積層造形装置
US20230069317A1 (en) * 2021-08-25 2023-03-02 Applied Materials, Inc. Thermal choke plate
TWI890199B (zh) * 2022-12-02 2025-07-11 日商鎧俠股份有限公司 半導體裝置冷卻裝置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013514669A (ja) 2009-12-18 2013-04-25 アプライド マテリアルズ インコーポレイテッド 広範囲ウエハ温度制御のための多機能ヒータ／冷却装置ペデスタル
WO2015105647A1 (en) 2014-01-07 2015-07-16 Applied Materials, Inc. Pecvd ceramic heater with wide range of operating temperatures

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4256503B2 (ja) * 1997-10-30 2009-04-22 東京エレクトロン株式会社 真空処理装置
WO2000026960A1 (fr) * 1998-10-29 2000-05-11 Tokyo Electron Limited Dispositif de traitement sous vide
JP2003060973A (ja) * 2001-08-21 2003-02-28 Mitsubishi Heavy Ind Ltd 監視カメラ誘導用送信器、監視カメラ、及び、監視システム
JP4574987B2 (ja) * 2002-01-10 2010-11-04 東京エレクトロン株式会社 処理装置
WO2004090960A1 (ja) * 2003-04-07 2004-10-21 Tokyo Electron Limited 載置台構造及びこの載置台構造を有する熱処理装置
JP4761774B2 (ja) * 2005-01-12 2011-08-31 東京エレクトロン株式会社 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法
CN100358098C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US20070169703A1 (en) * 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US7705238B2 (en) * 2006-05-22 2010-04-27 Andrew Llc Coaxial RF device thermally conductive polymer insulator and method of manufacture
KR101560138B1 (ko) 2008-06-24 2015-10-14 어플라이드 머티어리얼스, 인코포레이티드 저온 ｐｅｃｖｄ 애플리케이션을 위한 받침대 히터
US8733280B2 (en) 2010-12-20 2014-05-27 Intermolecular, Inc. Showerhead for processing chamber
JP6005946B2 (ja) * 2012-02-07 2016-10-12 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
US9089007B2 (en) 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
US10177014B2 (en) * 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
WO2014116392A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Electrostatic chuck with concentric cooling base
US9698074B2 (en) 2013-09-16 2017-07-04 Applied Materials, Inc. Heated substrate support with temperature profile control
CN204793612U (zh) * 2015-04-17 2015-11-18 李后杰 用于激光二极管的封装结构
CN104990175A (zh) * 2015-07-28 2015-10-21 珠海格力电器股份有限公司 一种辐射换热板组件

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013514669A (ja) 2009-12-18 2013-04-25 アプライド マテリアルズ インコーポレイテッド 広範囲ウエハ温度制御のための多機能ヒータ／冷却装置ペデスタル
WO2015105647A1 (en) 2014-01-07 2015-07-16 Applied Materials, Inc. Pecvd ceramic heater with wide range of operating temperatures

Also Published As

Publication number Publication date
WO2018057369A1 (en) 2018-03-29
JP2019533306A (ja) 2019-11-14
CN109716497A (zh) 2019-05-03
CN109716497B (zh) 2023-09-26
US10910238B2 (en) 2021-02-02
US20180082866A1 (en) 2018-03-22
TW201814823A (zh) 2018-04-16
TW202015169A (zh) 2020-04-16
KR102236934B1 (ko) 2021-04-05
KR20190043645A (ko) 2019-04-26
TWI729447B (zh) 2021-06-01
TWI671851B (zh) 2019-09-11

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