CN109716497B - 用于宽范围温度控制的加热器基座组件 - Google Patents

用于宽范围温度控制的加热器基座组件 Download PDF

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Publication number
CN109716497B
CN109716497B CN201780057399.9A CN201780057399A CN109716497B CN 109716497 B CN109716497 B CN 109716497B CN 201780057399 A CN201780057399 A CN 201780057399A CN 109716497 B CN109716497 B CN 109716497B
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China
Prior art keywords
assembly
support member
substrate
shaft
support
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CN201780057399.9A
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English (en)
Chinese (zh)
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CN109716497A (zh
Inventor
K·阿拉亚瓦里
A·巴拉克里希纳
S·巴录佳
A·K·班塞尔
M·J·布舍
J·C·罗查-阿尔瓦雷斯
S·T·斯里尼瓦桑
T·乌拉维
周建华
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201780057399.9A 2016-09-22 2017-09-13 用于宽范围温度控制的加热器基座组件 Active CN109716497B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662398310P 2016-09-22 2016-09-22
US62/398,310 2016-09-22
PCT/US2017/051373 WO2018057369A1 (en) 2016-09-22 2017-09-13 Heater pedestal assembly for wide range temperature control

Publications (2)

Publication Number Publication Date
CN109716497A CN109716497A (zh) 2019-05-03
CN109716497B true CN109716497B (zh) 2023-09-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201780057399.9A Active CN109716497B (zh) 2016-09-22 2017-09-13 用于宽范围温度控制的加热器基座组件

Country Status (6)

Country Link
US (1) US10910238B2 (enExample)
JP (1) JP7073349B2 (enExample)
KR (1) KR102236934B1 (enExample)
CN (1) CN109716497B (enExample)
TW (2) TWI671851B (enExample)
WO (1) WO2018057369A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106607320B (zh) * 2016-12-22 2019-10-01 武汉华星光电技术有限公司 适用于柔性基板的热真空干燥装置
KR102460313B1 (ko) * 2018-12-13 2022-10-28 주식회사 원익아이피에스 기판 처리 장치의 서셉터 및 기판 처리 장치
TWI811307B (zh) * 2019-03-12 2023-08-11 鴻創應用科技有限公司 陶瓷電路複合結構及其製造方法
US12420314B2 (en) 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method
US11515176B2 (en) 2020-04-14 2022-11-29 Applied Materials, Inc. Thermally controlled lid stack components
US20220028710A1 (en) * 2020-07-21 2022-01-27 Applied Materials, Inc. Distribution components for semiconductor processing systems
US12020957B2 (en) * 2020-08-31 2024-06-25 Applied Materials, Inc. Heater assembly with process gap control for batch processing chambers
JP7490508B2 (ja) * 2020-09-09 2024-05-27 日本電子株式会社 三次元積層造形装置
US20230069317A1 (en) * 2021-08-25 2023-03-02 Applied Materials, Inc. Thermal choke plate
TWI890199B (zh) * 2022-12-02 2025-07-11 日商鎧俠股份有限公司 半導體裝置冷卻裝置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11265931A (ja) * 1997-10-30 1999-09-28 Tokyo Electron Ltd 真空処理装置
JPWO2003060973A1 (ja) * 2002-01-10 2005-05-19 東京エレクトロン株式会社 処理装置
JP2006194679A (ja) * 2005-01-12 2006-07-27 Tokyo Electron Ltd 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法
CN102844854A (zh) * 2009-12-18 2012-12-26 应用材料公司 宽范围晶圆温度控制的多功能加热器/冷却器基座
JP2013162010A (ja) * 2012-02-07 2013-08-19 Dainippon Screen Mfg Co Ltd 熱処理装置
CN104871305A (zh) * 2012-12-14 2015-08-26 应用材料公司 用于基板处理腔室部件的热辐射阻挡层
CN104990175A (zh) * 2015-07-28 2015-10-21 珠海格力电器股份有限公司 一种辐射换热板组件
CN204793612U (zh) * 2015-04-17 2015-11-18 李后杰 用于激光二极管的封装结构

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EP1132956A4 (en) * 1998-10-29 2005-04-27 Tokyo Electron Ltd VACUUM GENERATOR UNIT
JP2003060973A (ja) * 2001-08-21 2003-02-28 Mitsubishi Heavy Ind Ltd 監視カメラ誘導用送信器、監視カメラ、及び、監視システム
EP1612854A4 (en) * 2003-04-07 2007-10-17 Tokyo Electron Ltd LOADING TABLE AND HEAT TREATMENT DEVICE WITH LOADING TABLE
CN100358098C (zh) 2005-08-05 2007-12-26 中微半导体设备(上海)有限公司 半导体工艺件处理装置
US20070169703A1 (en) * 2006-01-23 2007-07-26 Brent Elliot Advanced ceramic heater for substrate processing
US7705238B2 (en) * 2006-05-22 2010-04-27 Andrew Llc Coaxial RF device thermally conductive polymer insulator and method of manufacture
JP2011525719A (ja) 2008-06-24 2011-09-22 アプライド マテリアルズ インコーポレイテッド 低温ｐｅｃｖｄ用途用のペデスタルヒータ
US8733280B2 (en) 2010-12-20 2014-05-27 Intermolecular, Inc. Showerhead for processing chamber
US9089007B2 (en) 2012-04-27 2015-07-21 Applied Materials, Inc. Method and apparatus for substrate support with multi-zone heating
WO2014116392A1 (en) * 2013-01-25 2014-07-31 Applied Materials, Inc. Electrostatic chuck with concentric cooling base
US9698074B2 (en) 2013-09-16 2017-07-04 Applied Materials, Inc. Heated substrate support with temperature profile control
US20150194326A1 (en) * 2014-01-07 2015-07-09 Applied Materials, Inc. Pecvd ceramic heater with wide range of operating temperatures

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11265931A (ja) * 1997-10-30 1999-09-28 Tokyo Electron Ltd 真空処理装置
JPWO2003060973A1 (ja) * 2002-01-10 2005-05-19 東京エレクトロン株式会社 処理装置
JP2006194679A (ja) * 2005-01-12 2006-07-27 Tokyo Electron Ltd 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法
CN102844854A (zh) * 2009-12-18 2012-12-26 应用材料公司 宽范围晶圆温度控制的多功能加热器/冷却器基座
JP2013162010A (ja) * 2012-02-07 2013-08-19 Dainippon Screen Mfg Co Ltd 熱処理装置
CN104871305A (zh) * 2012-12-14 2015-08-26 应用材料公司 用于基板处理腔室部件的热辐射阻挡层
CN204793612U (zh) * 2015-04-17 2015-11-18 李后杰 用于激光二极管的封装结构
CN104990175A (zh) * 2015-07-28 2015-10-21 珠海格力电器股份有限公司 一种辐射换热板组件

Also Published As

Publication number Publication date
WO2018057369A1 (en) 2018-03-29
KR20190043645A (ko) 2019-04-26
TWI671851B (zh) 2019-09-11
US10910238B2 (en) 2021-02-02
TW201814823A (zh) 2018-04-16
JP2019533306A (ja) 2019-11-14
US20180082866A1 (en) 2018-03-22
TW202015169A (zh) 2020-04-16
CN109716497A (zh) 2019-05-03
TWI729447B (zh) 2021-06-01
JP7073349B2 (ja) 2022-05-23
KR102236934B1 (ko) 2021-04-05

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