CN109716497B - 用于宽范围温度控制的加热器基座组件 - Google Patents
用于宽范围温度控制的加热器基座组件 Download PDFInfo
- Publication number
- CN109716497B CN109716497B CN201780057399.9A CN201780057399A CN109716497B CN 109716497 B CN109716497 B CN 109716497B CN 201780057399 A CN201780057399 A CN 201780057399A CN 109716497 B CN109716497 B CN 109716497B
- Authority
- CN
- China
- Prior art keywords
- shaft
- base assembly
- support member
- substrate
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- 239000003989 dielectric material Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 238000000034 method Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 14
- 239000002826 coolant Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000712 assembly Effects 0.000 description 4
- 238000000429 assembly Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 230000013011 mating Effects 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000013529 heat transfer fluid Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662398310P | 2016-09-22 | 2016-09-22 | |
| US62/398,310 | 2016-09-22 | ||
| PCT/US2017/051373 WO2018057369A1 (en) | 2016-09-22 | 2017-09-13 | Heater pedestal assembly for wide range temperature control |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109716497A CN109716497A (zh) | 2019-05-03 |
| CN109716497B true CN109716497B (zh) | 2023-09-26 |
Family
ID=61621254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780057399.9A Active CN109716497B (zh) | 2016-09-22 | 2017-09-13 | 用于宽范围温度控制的加热器基座组件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10910238B2 (enExample) |
| JP (1) | JP7073349B2 (enExample) |
| KR (1) | KR102236934B1 (enExample) |
| CN (1) | CN109716497B (enExample) |
| TW (2) | TWI671851B (enExample) |
| WO (1) | WO2018057369A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106607320B (zh) * | 2016-12-22 | 2019-10-01 | 武汉华星光电技术有限公司 | 适用于柔性基板的热真空干燥装置 |
| KR102460313B1 (ko) * | 2018-12-13 | 2022-10-28 | 주식회사 원익아이피에스 | 기판 처리 장치의 서셉터 및 기판 처리 장치 |
| TWI811307B (zh) * | 2019-03-12 | 2023-08-11 | 鴻創應用科技有限公司 | 陶瓷電路複合結構及其製造方法 |
| US12420314B2 (en) * | 2019-10-18 | 2025-09-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor cleaning apparatus and method |
| US11515176B2 (en) * | 2020-04-14 | 2022-11-29 | Applied Materials, Inc. | Thermally controlled lid stack components |
| US20220028710A1 (en) * | 2020-07-21 | 2022-01-27 | Applied Materials, Inc. | Distribution components for semiconductor processing systems |
| US12020957B2 (en) * | 2020-08-31 | 2024-06-25 | Applied Materials, Inc. | Heater assembly with process gap control for batch processing chambers |
| JP7490508B2 (ja) * | 2020-09-09 | 2024-05-27 | 日本電子株式会社 | 三次元積層造形装置 |
| US20230069317A1 (en) * | 2021-08-25 | 2023-03-02 | Applied Materials, Inc. | Thermal choke plate |
| TWI890199B (zh) * | 2022-12-02 | 2025-07-11 | 日商鎧俠股份有限公司 | 半導體裝置冷卻裝置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11265931A (ja) * | 1997-10-30 | 1999-09-28 | Tokyo Electron Ltd | 真空処理装置 |
| JPWO2003060973A1 (ja) * | 2002-01-10 | 2005-05-19 | 東京エレクトロン株式会社 | 処理装置 |
| JP2006194679A (ja) * | 2005-01-12 | 2006-07-27 | Tokyo Electron Ltd | 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法 |
| CN102844854A (zh) * | 2009-12-18 | 2012-12-26 | 应用材料公司 | 宽范围晶圆温度控制的多功能加热器/冷却器基座 |
| JP2013162010A (ja) * | 2012-02-07 | 2013-08-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
| CN104871305A (zh) * | 2012-12-14 | 2015-08-26 | 应用材料公司 | 用于基板处理腔室部件的热辐射阻挡层 |
| CN104990175A (zh) * | 2015-07-28 | 2015-10-21 | 珠海格力电器股份有限公司 | 一种辐射换热板组件 |
| CN204793612U (zh) * | 2015-04-17 | 2015-11-18 | 李后杰 | 用于激光二极管的封装结构 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000026960A1 (fr) * | 1998-10-29 | 2000-05-11 | Tokyo Electron Limited | Dispositif de traitement sous vide |
| JP2003060973A (ja) * | 2001-08-21 | 2003-02-28 | Mitsubishi Heavy Ind Ltd | 監視カメラ誘導用送信器、監視カメラ、及び、監視システム |
| WO2004090960A1 (ja) * | 2003-04-07 | 2004-10-21 | Tokyo Electron Limited | 載置台構造及びこの載置台構造を有する熱処理装置 |
| CN100358098C (zh) | 2005-08-05 | 2007-12-26 | 中微半导体设备(上海)有限公司 | 半导体工艺件处理装置 |
| US20070169703A1 (en) * | 2006-01-23 | 2007-07-26 | Brent Elliot | Advanced ceramic heater for substrate processing |
| US7705238B2 (en) * | 2006-05-22 | 2010-04-27 | Andrew Llc | Coaxial RF device thermally conductive polymer insulator and method of manufacture |
| KR101560138B1 (ko) | 2008-06-24 | 2015-10-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 저온 ｐｅｃｖｄ 애플리케이션을 위한 받침대 히터 |
| US8733280B2 (en) | 2010-12-20 | 2014-05-27 | Intermolecular, Inc. | Showerhead for processing chamber |
| US9089007B2 (en) | 2012-04-27 | 2015-07-21 | Applied Materials, Inc. | Method and apparatus for substrate support with multi-zone heating |
| WO2014116392A1 (en) * | 2013-01-25 | 2014-07-31 | Applied Materials, Inc. | Electrostatic chuck with concentric cooling base |
| US9698074B2 (en) | 2013-09-16 | 2017-07-04 | Applied Materials, Inc. | Heated substrate support with temperature profile control |
| US20150194326A1 (en) * | 2014-01-07 | 2015-07-09 | Applied Materials, Inc. | Pecvd ceramic heater with wide range of operating temperatures |
-
2017
- 2017-08-28 TW TW106129088A patent/TWI671851B/zh active
- 2017-08-28 TW TW108127817A patent/TWI729447B/zh active
- 2017-09-13 KR KR1020197011339A patent/KR102236934B1/ko active Active
- 2017-09-13 US US15/703,666 patent/US10910238B2/en active Active
- 2017-09-13 WO PCT/US2017/051373 patent/WO2018057369A1/en not_active Ceased
- 2017-09-13 JP JP2019515489A patent/JP7073349B2/ja active Active
- 2017-09-13 CN CN201780057399.9A patent/CN109716497B/zh active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11265931A (ja) * | 1997-10-30 | 1999-09-28 | Tokyo Electron Ltd | 真空処理装置 |
| JPWO2003060973A1 (ja) * | 2002-01-10 | 2005-05-19 | 東京エレクトロン株式会社 | 処理装置 |
| JP2006194679A (ja) * | 2005-01-12 | 2006-07-27 | Tokyo Electron Ltd | 温度／厚さ測定装置，温度／厚さ測定方法，温度／厚さ測定システム，制御システム，制御方法 |
| CN102844854A (zh) * | 2009-12-18 | 2012-12-26 | 应用材料公司 | 宽范围晶圆温度控制的多功能加热器/冷却器基座 |
| JP2013162010A (ja) * | 2012-02-07 | 2013-08-19 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
| CN104871305A (zh) * | 2012-12-14 | 2015-08-26 | 应用材料公司 | 用于基板处理腔室部件的热辐射阻挡层 |
| CN204793612U (zh) * | 2015-04-17 | 2015-11-18 | 李后杰 | 用于激光二极管的封装结构 |
| CN104990175A (zh) * | 2015-07-28 | 2015-10-21 | 珠海格力电器股份有限公司 | 一种辐射换热板组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018057369A1 (en) | 2018-03-29 |
| JP2019533306A (ja) | 2019-11-14 |
| CN109716497A (zh) | 2019-05-03 |
| JP7073349B2 (ja) | 2022-05-23 |
| US10910238B2 (en) | 2021-02-02 |
| US20180082866A1 (en) | 2018-03-22 |
| TW201814823A (zh) | 2018-04-16 |
| TW202015169A (zh) | 2020-04-16 |
| KR102236934B1 (ko) | 2021-04-05 |
| KR20190043645A (ko) | 2019-04-26 |
| TWI729447B (zh) | 2021-06-01 |
| TWI671851B (zh) | 2019-09-11 |
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