JP7063554B2 - 発光素子の作製方法 - Google Patents
発光素子の作製方法 Download PDFInfo
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- JP7063554B2 JP7063554B2 JP2017125183A JP2017125183A JP7063554B2 JP 7063554 B2 JP7063554 B2 JP 7063554B2 JP 2017125183 A JP2017125183 A JP 2017125183A JP 2017125183 A JP2017125183 A JP 2017125183A JP 7063554 B2 JP7063554 B2 JP 7063554B2
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- light emitting
- layer
- substrate
- emitting element
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- WOYDRSOIBHFMGB-UHFFFAOYSA-N n,9-diphenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C3=CC=CC=C3N(C=3C=CC=CC=3)C2=CC=1)C1=CC=C(N(C=2C=CC=CC=2)C=2C3=CC=CC=2)C3=C1 WOYDRSOIBHFMGB-UHFFFAOYSA-N 0.000 description 1
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- COVCYOMDZRYBNM-UHFFFAOYSA-N n-naphthalen-1-yl-9-phenyl-n-(9-phenylcarbazol-3-yl)carbazol-3-amine Chemical compound C1=CC=CC=C1N1C2=CC=C(N(C=3C=C4C5=CC=CC=C5N(C=5C=CC=CC=5)C4=CC=3)C=3C4=CC=CC=C4C=CC=3)C=C2C2=CC=CC=C21 COVCYOMDZRYBNM-UHFFFAOYSA-N 0.000 description 1
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- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- SEEPANYCNGTZFQ-UHFFFAOYSA-N sulfadiazine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)NC1=NC=CC=N1 SEEPANYCNGTZFQ-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
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- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Description
続いて、本発明の一態様である発光素子の例について図3(A)を用いて以下、詳細に説明する。
マイクロキャビティ構造を有する発光素子は、上記一対の電極を、反射電極と半透過・半反射電極とから構成することにより得られる。反射電極と半透過・半反射電極は上述の第1の電極と第2の電極に相当する。反射電極と半透過・半反射電極との間には少なくともEL層を有し、EL層は少なくとも発光領域となる発光層を有している。
本発明の一態様の発光装置について図6を用いて説明する。なお、図6(A)は、発光装置を示す上面図、図6(B)は図6(A)をA-BおよびC-Dで切断した断面図である。この発光装置は、発光素子の発光を制御するものとして、点線で示された駆動回路部(ソース線駆動回路)601、画素部602、駆動回路部(ゲート線駆動回路)603を含んでいる。また、604は封止基板、605はシール材であり、シール材605で囲まれた内側は、空間607になっている。
本発明の一態様である照明装置を図10を参照しながら説明する。図10(B)は照明装置の上面図、図10(A)は図10(B)におけるe-f断面図である。
ここでは、本発明の一態様の半導体装置を用いた表示装置の表示部等に用いることのできる表示パネルの一例について、図18及び図19を用いて説明する。以下で例示する表示パネルは、反射型の液晶素子と、発光素子との双方を有し、透過モードと反射モードの両方の表示を行うことのできる、表示パネルである。
図18は、本発明の一態様の表示パネル688の斜視概略図である。表示パネル688は、基板651と基板661とが貼り合わされた構成を有する。図18では、基板661を破線で明示している。
図19に、図18で例示した表示パネルの、FPC672を含む領域の一部、回路659を含む領域の一部、及び表示部662を含む領域の一部をそれぞれ切断したときの断面の一例を示す。
以下では、上記に示す各構成要素について説明する。なお、先に示した機能と同様の機能を有する構成についての説明は省略する。
接着層としては、紫外線硬化型等の光硬化型接着剤、反応硬化型接着剤、熱硬化型接着剤、嫌気型接着剤などの各種硬化型接着剤を用いることができる。これら接着剤としてはエポキシ樹脂、アクリル樹脂、シリコーン樹脂、フェノール樹脂、ポリイミド樹脂、イミド樹脂、PVC(ポリビニルクロライド)樹脂、PVB(ポリビニルブチラル)樹脂、EVA(エチレンビニルアセテート)樹脂等が挙げられる。特に、エポキシ樹脂等の透湿性が低い材料が好ましい。また、二液混合型の樹脂を用いてもよい。また、接着シート等を用いてもよい。
接続層としては、異方性導電フィルム(ACF:Anisotropic Conductive Film)や、異方性導電ペースト(ACP:Anisotropic Conductive Paste)などを用いることができる。
着色層に用いることのできる材料としては、金属材料、樹脂材料、顔料または染料が含まれた樹脂材料などが挙げられる。
遮光層として用いることのできる材料としては、カーボンブラック、チタンブラック、金属、金属酸化物、複数の金属酸化物の固溶体を含む複合酸化物等が挙げられる。遮光層は、樹脂材料を含む膜であってもよいし、金属などの無機材料の薄膜であってもよい。また、遮光層に、着色層の材料を含む膜の積層膜を用いることもできる。例えば、ある色の光を透過する着色層に用いる材料を含む膜と、他の色の光を透過する着色層に用いる材料を含む膜との積層構造を用いることができる。着色層と遮光層の材料を共通化することで、装置を共通化できるほか工程を簡略化できるため好ましい。
ここでは、可撓性を有する基板を用いた表示パネルの作製方法の例について説明する。
本発明の一態様である電子機器の例について説明する。電子機器として、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。これらの電子機器の具体例を以下に示す。
まず、ガラス基板上に、酸化珪素を含むインジウム錫酸化物(ITSO)をスパッタリング法にて成膜し、第1の電極101を形成した。なお、その膜厚は70nmとし、電極面積は2mm×2mmとした。
発光素子1-1は上記発光素子1の電子注入層115を形成した後、上記構造式(vi)で表される銅フタロシアニン(略称:CuPc)を2nmとなるように蒸着して電子リレー層118を形成し、DBT3P-IIと酸化モリブデン(VI)とを重量比2:1(=DBT3P-II:酸化モリブデン)となるように60nm共蒸着してP型層117を形成し、膜厚調節層を形成した。
まず、ガラス基板上に、酸化珪素を含むインジウム錫酸化物(ITSO)をスパッタリング法にて成膜し、第1の電極101を形成した。なお、その膜厚は70nmとし、電極面積は2mm×2mmとした。
発光素子2-1は上記発光素子2の電子注入層115を形成した後、上記構造式(vi)で表される銅フタロシアニン(略称:CuPc)を2nm形成し、DBT3P-IIと酸化モリブデン(VI)とを重量比2:1(=DBT3P-II:酸化モリブデン)となるように85nm共蒸着して膜厚調節層を形成した。
102 第2の電極
103 EL層
111 正孔注入層
112 正孔輸送層
113 発光層
114 電子輸送層
115 電子注入層
116 電荷発生層
117 P型層
118 電子リレー層
119 電子注入バッファ層
150 観測方向
151 x軸方向およびy軸方向
152 z軸方向
400 基板
401 第1の電極
403 EL層
404 第2の電極
405 シール材
406 シール材
407 封止基板
412 パッド
420 ICチップ
501 第1の電極
502 第2の電極
503 EL層
511 第1の発光ユニット
512 第2の発光ユニット
513 電荷発生層
601 駆動回路部(ソース線駆動回路)
602 画素部
603 駆動回路部(ゲート線駆動回路)
604 封止基板
605 シール材
607 空間
608 配線
609 FPC(フレキシブルプリントサーキット)
610 素子基板
611 スイッチング用FET
612 電流制御用FET
613 第1の電極
614 絶縁物
616 EL層
617 第2の電極
618 発光素子
623 nチャネル型FET
624 pチャネル型FET
631 着色層
632 遮光膜
633a 配向膜
633b 配向膜
634 着色層
635 導電膜
640 液晶素子
641 接着層
642 接着層
643 導電膜
644 EL層
645a 導電膜
645b 導電膜
646 絶縁膜
647 絶縁膜
648 導電膜
649 接続層
651 基板
652 導電膜
653 半導体膜
654 導電膜
655 開口
656 偏光板
659 回路
660 発光素子
661 基板
662 表示部
663 導電膜
666 配線
672 FPC
673 IC
681 絶縁膜
682 絶縁膜
683 絶縁膜
684 絶縁膜
685 絶縁膜
686 接続体
687 接続部
688 表示パネル
689 トランジスタ
690 接続部
691 トランジスタ
692 トランジスタ
693 接続部
694 液晶層
695 導電膜
696 絶縁膜
697 絶縁膜
698 絶縁膜
699 導電膜
730 絶縁膜
770 平坦化絶縁膜
772 導電膜
782 発光素子
783 液滴吐出装置
784 液滴
785 層
786 EL層
788 導電膜
901 筐体
902 液晶層
903 バックライトユニット
904 筐体
905 ドライバIC
906 端子
951 基板
952 電極
953 絶縁層
954 隔壁層
955 EL層
956 電極
1001 基板
1002 下地絶縁膜
1003 ゲート絶縁膜
1006 ゲート電極
1007 ゲート電極
1008 ゲート電極
1020 第1の層間絶縁膜
1021 第2の層間絶縁膜
1022 電極
1024W 発光素子の第1の電極
1024R 発光素子の第1の電極
1024G 発光素子の第1の電極
1024B 発光素子の第1の電極
1025 隔壁
1028 EL層
1029 発光素子の第2の電極
1031 封止基板
1032 シール材
1033 透明な基材
1034R 赤色の着色層
1034G 緑色の着色層
1034B 青色の着色層
1035 黒色層(ブラックマトリックス)
1037 第3の層間絶縁膜
1040 画素部
1041 駆動回路部
1042 周辺部
1400 液滴吐出装置
1402 基板
1403 液滴吐出手段
1404 撮像手段
1405 ヘッド
1406 点線
1407 制御手段
1408 記憶媒体
1409 画像処理手段
1410 コンピュータ
1411 マーカー
1412 ヘッド
1413 材料供給源
1414 材料供給源
1415 材料供給源
1416 ヘッド
2001 筐体
2002 光源
3001 照明装置
5000 表示領域
5001 表示領域
5002 表示領域
5003 表示領域
5004 表示領域
5005 表示領域
7101 筐体
7103 表示部
7105 スタンド
7107 表示部
7109 操作キー
7110 リモコン操作機
7201 本体
7202 筐体
7203 表示部
7204 キーボード
7205 外部接続ポート
7206 ポインティングデバイス
7210 第2の表示部
7401 筐体
7402 表示部
7403 操作ボタン
7404 外部接続ポート
7405 スピーカ
7406 マイク
9033 留め具
9034 スイッチ
9035 電源スイッチ
9036 スイッチ
9038 操作スイッチ
9310 携帯情報端末
9311 表示パネル
9312 表示領域
9313 ヒンジ
9315 筐体
9630 筐体
9631 表示部
9631a 表示部
9631b 表示部
9632a タッチパネル領域
9632b タッチパネル領域
9633 太陽電池
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 操作キー
9638 コンバータ
9639 ボタン
Claims (6)
- 有機化合物又は有機金属錯体を発光材料とし、
前記発光材料とホスト材料とを含む発光層を有する発光素子の作製方法であって、
前記発光層は、前記発光材料と前記ホスト材料とを共蒸着することにより形成し、
前記発光層を成膜する際に、共蒸着を行う蒸着室内の全圧に対する二酸化炭素の分圧の比率を0.03%より大きく保ちながら蒸着を行い、前記発光層の分子配向パラメータaの値を0.2以下とする、発光素子の作製方法。 - 請求項1において、
前記発光層を成膜する際に、共蒸着を行う蒸着室内の全圧に対する二酸化炭素の分圧の比率が0.1%以上である、発光素子の作製方法。 - 請求項1又は請求項2において、
前記発光層を成膜する際に、共蒸着を行う蒸着室のチャンバー内の全圧に対する二酸化炭素の分圧の比率が0.1%以上10%以下である、発光素子の作製方法。 - 請求項1乃至請求項3のいずれか一項において、
前記蒸着を行う際、前記発光層が成膜される基板を冷却する、発光素子の作製方法。 - 請求項1乃至請求項4のいずれか一項において、
前記発光層に、さらにアシスト材料を含む、発光素子の作製方法。 - 請求項5において、
前記発光材料がイリジウム錯体である、発光素子の作製方法。
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KR20180002505A (ko) | 2018-01-08 |
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