JP7058129B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP7058129B2
JP7058129B2 JP2018005761A JP2018005761A JP7058129B2 JP 7058129 B2 JP7058129 B2 JP 7058129B2 JP 2018005761 A JP2018005761 A JP 2018005761A JP 2018005761 A JP2018005761 A JP 2018005761A JP 7058129 B2 JP7058129 B2 JP 7058129B2
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Japan
Prior art keywords
plasma processing
plasma
data
prediction model
unit
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JP2018005761A
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English (en)
Japanese (ja)
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JP2019125506A5 (enExample
JP2019125506A (ja
Inventor
祥太 梅田
慶太 野木
昭 鹿子嶋
大輔 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
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Hitachi High Tech Corp
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Publication date
Application filed by Hitachi High Tech Corp filed Critical Hitachi High Tech Corp
Priority to JP2018005761A priority Critical patent/JP7058129B2/ja
Priority to KR1020180083797A priority patent/KR102100210B1/ko
Priority to TW107127210A priority patent/TWI739024B/zh
Priority to US16/123,208 priority patent/US11289313B2/en
Publication of JP2019125506A publication Critical patent/JP2019125506A/ja
Publication of JP2019125506A5 publication Critical patent/JP2019125506A5/ja
Application granted granted Critical
Publication of JP7058129B2 publication Critical patent/JP7058129B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/443—Emission spectrometry
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
    • G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/20—Pc systems
    • G05B2219/26—Pc applications
    • G05B2219/2602—Wafer processing

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2018005761A 2018-01-17 2018-01-17 プラズマ処理装置 Active JP7058129B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018005761A JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置
KR1020180083797A KR102100210B1 (ko) 2018-01-17 2018-07-19 플라스마 처리 장치
TW107127210A TWI739024B (zh) 2018-01-17 2018-08-06 電漿處理裝置
US16/123,208 US11289313B2 (en) 2018-01-17 2018-09-06 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018005761A JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2019125506A JP2019125506A (ja) 2019-07-25
JP2019125506A5 JP2019125506A5 (enExample) 2020-09-03
JP7058129B2 true JP7058129B2 (ja) 2022-04-21

Family

ID=67214239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018005761A Active JP7058129B2 (ja) 2018-01-17 2018-01-17 プラズマ処理装置

Country Status (4)

Country Link
US (1) US11289313B2 (enExample)
JP (1) JP7058129B2 (enExample)
KR (1) KR102100210B1 (enExample)
TW (1) TWI739024B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11966203B2 (en) 2019-08-21 2024-04-23 Kla Corporation System and method to adjust a kinetics model of surface reactions during plasma processing
JP7542417B2 (ja) * 2019-12-27 2024-08-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、基板処理方法、基板処理システム、及び学習用データの生成方法
JP7429623B2 (ja) * 2020-08-31 2024-02-08 株式会社日立製作所 製造条件設定自動化装置及び方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281461A (ja) 2003-03-12 2004-10-07 Tokyo Electron Ltd 処理結果の予測方法及び予測装置
WO2007066404A1 (ja) 2005-12-08 2007-06-14 Spansion Llc 半導体製造装置、その制御システムおよびその制御方法
JP2009010370A (ja) 2008-06-11 2009-01-15 Hitachi Ltd 半導体処理装置
JP2009049382A (ja) 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
JP2005051269A (ja) * 2004-10-12 2005-02-24 Hitachi Ltd 半導体処理装置
JP5334787B2 (ja) * 2009-10-09 2013-11-06 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9184021B2 (en) * 2013-10-04 2015-11-10 Applied Materials, Inc. Predictive method of matching two plasma reactors
JP6220319B2 (ja) 2014-07-17 2017-10-25 株式会社日立ハイテクノロジーズ データ解析方法及びプラズマエッチング方法並びにプラズマ処理装置
JP6310866B2 (ja) * 2015-01-30 2018-04-11 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法並びに解析方法
JP6446334B2 (ja) * 2015-06-12 2018-12-26 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理装置の制御方法及び記憶媒体
JP6549917B2 (ja) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそのデータ解析装置
TWI727004B (zh) * 2016-03-03 2021-05-11 美商蘭姆研究公司 使用負載阻抗夾具以將固定參數指派予匹配網路模型的系統及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004281461A (ja) 2003-03-12 2004-10-07 Tokyo Electron Ltd 処理結果の予測方法及び予測装置
WO2007066404A1 (ja) 2005-12-08 2007-06-14 Spansion Llc 半導体製造装置、その制御システムおよびその制御方法
JP2009049382A (ja) 2007-07-26 2009-03-05 Panasonic Corp ドライエッチング方法およびドライエッチング装置
JP2009010370A (ja) 2008-06-11 2009-01-15 Hitachi Ltd 半導体処理装置

Also Published As

Publication number Publication date
US20190221407A1 (en) 2019-07-18
KR20190087940A (ko) 2019-07-25
TWI739024B (zh) 2021-09-11
JP2019125506A (ja) 2019-07-25
KR102100210B1 (ko) 2020-04-14
US11289313B2 (en) 2022-03-29
TW201933418A (zh) 2019-08-16

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